http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Raktim Bhattacharya,Sulagna Saha,Olga Kostina,Lyudmila Muravnik,Adinpunya Mitra 한국현미경학회 2020 Applied microscopy Vol.50 No.1
Sample preparation including dehydration and drying of samples is the most intricate part of scanning electron microscopy. Most current sample preparation protocols use critical-point drying with liquid carbon dioxide. Very few studies have reported samples that were dried using chemical reagents. In this study, we used hexamethyldisilazane, a chemical drying reagent, to prepare plant samples. As glandular trichomes are among the most fragile and sensitive surface structures found on plants, we used Millingtonia hortensis leaf samples as our study materials because they contain abundant glandular trichomes. The results obtained using this new method are identical to those produced via critical-point drying.
Argunova, T S,Jung, J W,Je, J H,Abrosimov, N V,Grekhov, I V,Kostina, L S,Rozhkov, A V,Sorokin, L M,Zabrodskii, A G Institute of Physics [etc.] 2009 Journal of Physics. D, Applied Physics Vol.42 No.8
<P>Dislocations in p-type Si<SUB>1−<I>x</I></SUB>Ge<SUB><I>x</I></SUB> single crystals (2–8 at% Ge) grown with the Czochralski technique are investigated by synchrotron white beam topography in transmission geometry. As the Ge concentration increases, the dislocation structure evolves from individual dislocations to slip bands and sub-grain boundaries, and the dislocation density increases from <10<SUP>2</SUP> cm<SUP>−2</SUP> to 10<SUP>5</SUP>–10<SUP>6</SUP> cm<SUP>−2</SUP> at 8 at%. We discuss the effect of dislocations on the electrical characteristics such as resistivity ρ<SUB><I>v</I></SUB>, Hall hole mobility μ<SUB>p</SUB>, carrier lifetime τ<SUB>e</SUB> and <I>I</I>–<I>V</I> characteristics. Here τ<SUB>e</SUB> and <I>I</I>–<I>V</I> characteristics are measured from the diodes fabricated by bonding the p-Si<SUB>1−<I>x</I></SUB>Ge<SUB><I>x</I></SUB> to n-Si wafers. <I>I</I>–<I>V</I> characteristics are not deteriorated in spite of a five times decrease in τ<SUB>e</SUB> with the Ge concentration.</P>
Argunova, T. S.,Yi, J. M.,Jung, J. W.,Je, J. H.,Sorokin, L. M.,Gutkin, M. Yu.,Belyakova, E. I.,Kostina, L. S.,Zabrodskii, A. G.,Abrosimov, N. V. WILEY-VCH Verlag 2007 Physica status solidi. PSS. A, Applications and ma Vol.204 No.8
<P>The defect structure of Si<SUB>1–x </SUB>Ge<SUB>x </SUB> wafers with 4% of germanium and their interfaces with Si wafers were studied using white radiation topography and phase-sensitive radiography. The heterostructures were manufactured by direct bonding of Si<SUB>1–x </SUB>Ge<SUB>x </SUB> and Si crystalline wafers made of bulk crystals that were grown by the Czochralski technique. In Si<SUB>1–x </SUB>Ge<SUB>x </SUB> crystals, the segregations of Ge act as dislocation nucleation sites. In Si<SUB>1–x </SUB>Ge<SUB>x </SUB>/Si bonded structures, the segregation of Ge as well as the accumulation of dislocations induce elastic strain and plastic deformation during high-temperature bonding annealing. With the topography–radiography combination, we are able not only to detect microcracks, indicating nonbonded areas, by radiography, but also to reveal dislocations and long-range strain fields by topography at the same time. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)</P>