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An Improved Symmetrically-Graded Doped-Channel Heterostructure Field-Effect Transistor
Ke-Hua Su,Wei-Chou Hsu,Chang-Luen Wu,Ching-Sung Lee,Po-Jung Hu,Yeong-Jia Chen,Yu-Shyan Lin 한국물리학회 2007 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.50 No.6
A new heterostructure field-effect transistor with an InGaAs symmetrically-graded doped-channel (SGDC) structure has been successfully investigated. The channel design demonstrated a reduced Coulomb scattering phenomenon by confining the conduction electrons away from the channel/spacer interface. Consequently, a higher current density, a higher breakdown voltage, a wider gate-voltage swing, a higher transconductance, a higher threshold voltage, and improved microwave and power characteristics were achieved by using the SGDC structure, as compared to those of conventional doped-channel devices. Besides, the AlGaAs/GaAs superlattice buffer structure was used to improve the high-temperature threshold-voltage characteristics.
( Chen-hua Liu ),( Chi-yi Chen ),( Wei-wen Su ),( Chun-jen Liu ),( Ching-chu Lo ),( Ke-jhang Huang ),( Jyh-jou Chen ),( Kuo-chih Tseng ),( Chi-yang Chang ),( Cheng-yuan Peng ),( Yu-lueng Shih ),( Chia 대한간학회 2021 Clinical and Molecular Hepatology(대한간학회지) Vol.27 No.4
Background/Aims: Real-world studies assessing the effectiveness and safety of sofosbuvir/velpatasvir (SOF/VEL) plus ribavirin (RBV) for Child-Pugh B/C hepatitis C virus (HCV)-related cirrhosis are limited. Methods: We included 107 patients with Child-Pugh B/C HCV-related cirrhosis receiving SOF/VEL plus RBV for 12 weeks in Taiwan. The sustained virologic response rates at off-treatment week 12 (SVR<sub>12</sub>) for the evaluable population (EP), modified EP, and per-protocol population (PP) were assessed. The safety profiles were reported. Results: The SVR<sub>12</sub> rates in the EP, modified EP and PP were 89.7% (95% confidence interval [CI], 82.5-94.2%), 94.1% (95% CI, 87.8-97.3%), and 100% (95% CI, 96.2-100%). Number of patients who failed to achieve SVR<sub>12</sub> were attributed to virologic failures. The SVR<sub>12</sub> rates were comparable regardless of patient characteristics. One patient discontinued treatment because of adverse events (AEs). Twenty-four patients had serious AEs and six died, but none were related to SOF/VEL or RBV. Among the 96 patients achieving SVR<sub>12</sub>, 84.4% and 64.6% had improved Child-Pugh and model for endstage liver disease (MELD) scores. Multivariate analysis revealed that a baseline MELD score ≥15 was associated with an improved MELD score of ≥3 (odds ratio, 4.13; 95% CI, 1.16-14.71; P=0.02). Patients with chronic kidney disease (CKD) stage 1 had more significant estimated glomerular filtration rate declines than patients with CKD stage 2 (-0.42 mL/min/1.73 ㎡/month; P=0.01) or stage 3 (-0.56 mL/min/1.73 ㎡/month; P<0.001). Conclusions: SOF/VEL plus RBV for 12 weeks is efficacious and well-tolerated for Child-Pugh B/C HCV-related cirrhosis. (Clin Mol Hepatol 2021;27:575-588)
Ji Cheng Zhang,Jin Hua Wang,Jun Yi Liu,Qi Wei Guo,Jia Lin,Yi Lin Shen,Ke Xin Jia,Jia Jing Cai,Guo Ming Su,Ding Zhi Fang 대한신경정신의학회 2023 PSYCHIATRY INVESTIGATION Vol.20 No.11
Objective To verify effects of rs1061622 at tumor necrosis factor-α receptor II (TNF-RII) gene (<i>TNF-RII</i>) on post-traumatic stress disorder (PTSD) and its interactive effects with PTSD on serum lipids levels in adolescents.Methods PTSD was measured by PTSD Checklist-Civilian Version (PCL-C) in 699 adolescent survivors at 6 months after Wenchuan earthquake in China. A polymerase chain reaction and restriction fragment length polymorphism assay were utilized for <i>TNF-RII</i> rs1061622 genotyping followed by verification using DNA sequencing. Serum triglycerides (TG), total cholesterol (TC), high-density lipoprotein cholesterol (HDL-C), and low-density lipoprotein cholesterol were tested using routine methods.Results G (deoxyguanine) allele carriers had higher PCL-C scores than TT (deoxythymidine) homozygotes in female subjects. Female adolescents had higher PCL-C scores than male subjects in TT homozygotes. Predictors of PTSD prevalence and severity were different between G allele carriers and TT homozygotes. Subjects with PTSD had lower TG, TG/HDL-C, TC/HDL-C, and higher HDL-C than adolescents without PTSD in male G allele carriers. G allele carriers had higher TG/HDL-C and TC/HDL-C than TT homozygotes in male adolescents without PTSD, and lower TG and TG/HDL-C in male PTSD patients. G allele carriers had higher TG than TT homozygotes only in female adolescents without PTSD.Conclusion These results suggest reciprocal actions of <i>TNF-RII</i> rs1061622 with other factors on PTSD severity, interplays of <i>TNF-RII</i> rs1061622 with PTSD on serum lipid levels, and novel treatment strategies for PTSD and comorbidities of PTSD with hyperlipidemia among adolescents with different genetic backgrounds of <i>TNF-RII</i> rs1061622 after experiencing traumatic events.
Yu-Hang Wang,Qi Tang,Mei-Ni Su,Ji-Ke Tan,Wei-Yong Wang,Yong-Sen Lan,Xiao-Wei Deng,Yong-Tao Bai,Wei Luo,Xiao-Hua Li,Jiu-Lin Bai 국제구조공학회 2021 Steel and Composite Structures, An International J Vol.38 No.1
Post-earthquake fire is a common disaster which causes serious safety issues to infrastructures. This study aims to investigate the residual loading capacities of circular concrete-filled steel tube (CFST) columns under post-earthquake fire experimentally and numerically. The experimental programme contains two loading steps - pre-damage cyclic loading at room temperature and transient state tests with constant compression loads. Three finite element models are developed and validated against the test results. Upon validation, a total of 48 numerical results were generated in the parametric study to investigate the effects of thickness and strengths of steel tube, axial compression ratio and damage degree on the fire resistance of circular CFST columns. Based on the analysis on experimental and numerical results, the loading mechanism of circular CFST columns is discussed. A design method is proposed for the prediction of fire resistance time under different seismic pre-damage and compression loads. The predictions by the new method is compared with the newly generated experimental and numerical results and is found to be accurate and consistent with the mean value close to the unity and a coefficient of variation around 1%.
Ching-Sung Lee,Chia-Jeng Chian,Wei-Chou Hsu,Ke-Hua Su,Su-Jen Yu 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.52 No.4
This work provides comprehensive comparisons of the device characteristics, including the voltage gain, power performance, linearity and noise characteristics, for InAlAs/InGaAs/GaAs metamorphic high electron mobility transistors with respect to different indium contents in the InGaAs channel. Though the device with a high In-ratio InGaAs channel usually demonstrated improved high-frequency characteristics, the kink effects in their narrow-gap channel materials were found to seriously degrade the device performance. On the other hand, the low In-ratio channel device had characteristics advantageous for high-gain and high-linearity applications while the device with a compromised channel composition design was suitable for high-power circuit applications. This work provides comprehensive comparisons of the device characteristics, including the voltage gain, power performance, linearity and noise characteristics, for InAlAs/InGaAs/GaAs metamorphic high electron mobility transistors with respect to different indium contents in the InGaAs channel. Though the device with a high In-ratio InGaAs channel usually demonstrated improved high-frequency characteristics, the kink effects in their narrow-gap channel materials were found to seriously degrade the device performance. On the other hand, the low In-ratio channel device had characteristics advantageous for high-gain and high-linearity applications while the device with a compromised channel composition design was suitable for high-power circuit applications.
Ching-Sung Lee,Dong-Hai Huang,Jun-Chin Huang,Ke-Hua Su,Wei-Chou Hsu,Yeong-Jia Chen 한국물리학회 2006 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.48 No.4
A -doped In0.45Al0.55As/In0.53Ga0.47As/InAlGaAs/GaAs metamorphic high electron mobility transistor (MHEMT) using a Ni/Au-gate electrode has been successfully fabricated and demonstrated. Compared to conventional Au-gate devices with identical structures, the proposed device improves the kink-effect-related output conductance, the gate-voltage swing, the current drive capability, the breakdown characteristics, and the device power performance. Experimentally, a high extrinsic transconductance of 309 mS/mm, a high drain-source saturation current density of 573 mA/mm, an improved gate-voltage swing of 1.05 V with a corresponding saturation current density of 314 mA/mm, a high saturated output power of 11.3 dBm, and a high power gain of 23.8 dB with a power-added efficiency of 39.2 % are obtained for a 0.65 × 200 μm2 gate at 300 K. In addition, the measured fT and fmax are 49.1 and 61.7 GHz, respectively.
Ching-Sung Lee,Bo-I Chou,Wei-Chou Hsu,Ke-Hua Su 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.6
This work reports a novel AlGaAs/InGaAsN/GaAs heterostructure field-eect transistor (HFET) by integrating a dilute In0:3Ga0:7AsN0:01 nitride-channel directly onto a GaAs substrate by using a molecular beam epitaxy (MBE) system. Introducing nitrogen doping into an In0:3Ga0:7As channel can effectively reduce the eective energy band gap, resulting in an improved electron confinement capability. The thermal threshold coeficient (∂Vth=∂T) is very low, -1.07 mV/K, with an improved high-temperature linearity (∂GV S=∂T) of only 0.33 mV/K. Besides, improved high-temperature device characteristics have been achieved at 450 (300) K, including a gate-voltage swing (GVS) of 1.15 (1.2) V, a two-terminal gate-drain breakdown voltage (BVGD) of -14.4 (-15.8) V and a turn-on voltage (Von) of 0.92 (1.147) V.