Quality and Acceptability of Meat Nuggets with Fresh Aloe vera Gel

Rajkumar, V.,Verma, Arun K.,Patra, G.,Pradhan, S.,Biswas, S.,Chauhan, P.,Das, Arun K. Asian Australasian Association of Animal Productio 2016 Animal Bioscience Vol.29 No.5

Aloe vera has been used worldwide for pharmaceutical, food, and cosmetic industries due to its wide biological activities. However, quality improvement of low fat meat products and their acceptability with added Aloe vera gel (AVG) is scanty. The aim of this study was to explore the feasibility of using fresh AVG on physicochemical, textural, sensory and nutritive qualities of goat meat nuggets. The products were prepared with 0%, 2.5%, and 5% fresh AVG replacing goat meat and were analyzed for proximate composition, physicochemical and textural properties, fatty acid profile and sensory parameters. Changes in lipid oxidation and microbial growth of nuggets were also evaluated over 9 days of refrigerated storage. The results showed that AVG significantly (p<0.05) decreased the pH value and protein content of meat emulsion and nuggets. Product yield was affected at 5% level of gel. Addition of AVG in the formulation significantly affected the values of texture profile analysis. The AVG reduced the lipid oxidation and microbial growth in nuggets during storage. Sensory panelists preferred nuggets with 2.5% AVG over nuggets with 5% AVG. Therefore, AVG up to 2.5% level could be used for quality improvement in goat meat nuggets without affecting its sensorial, textural and nutritive values.

Strain energy release rates in the curved spar wingskin joints with pre-embedded delaminations

P.K. Mishra,A.K. Pradhan,M.K. Pandit,S.K. Panda 국제구조공학회 2023 Structural Engineering and Mechanics, An Int'l Jou Vol.87 No.1

Any pre-existed delamination defect present during manufacturing or induce during service loading conditions in the wingskin adherend invariably shows a greater loss of structural integrity of the spar wingskin joint (SWJ). In the present study, inter-laminar delamination propagation at the critical location of the SWJ has been carried out using contact and multi-point constraint finite elements available with commercial FE software (ANSYS APDL). Strain energy release rates (SERR) based on virtual crack closure technique have been computed for evaluation of the opening (Mode-I), sliding (Mode-II) and cross sliding (Mode-III) modes of delamination by sequential release of multi point constraint elements. The variations of different modes of SERR are observed to be significant by considering varied delamination lengths, material properties of adherends and radius of curvature of the SWJ panel. The SERR rates are seen to be much different at the two pre-embedded delamination ends. This shows dissimilar delamination propagation rates. The maximum is seen to occur in the delamination front in the unstiffened region of the wingskin. The curvature geometry and material anisotropy of SWJ adherends significantly influences the SERR values. Increase in the SERR values are observed with decrease in the radius of curvature of wingskin panel, keeping its width unchanged. SWJs made with flat FRP composite adherends have superior resistance to delamination damage propagation than curved composite laminated SWJ panels. SWJ made with Boron/Epoxy (B/E) material shows greater resistance to the delamination propagation.

A Study of SCEs and Analog FOMs in GS-DGMOSFET with Lateral Asymmetric Channel Doping

P. K Sahu,S. K. Mohapatra,K. P. Pradhan 대한전자공학회 2013 Journal of semiconductor technology and science Vol.13 No.6

The design and analysis of analog circuit application on CMOS technology are a challenge in deep sub-micrometer process. This paper is a study on the performance value of Double Gate (DG) Metal Oxide Semiconductor Field Effect Transistor (MOSFET) with Gate Stack and the channel engineering Single Halo (SH), Double Halo (DH). Four different structures have been analysed keeping channel length constant. The short channel parameters and different sub-threshold analog figures of merit (FOMs) are analysed. This work extensively provides the device structures which may be applicable for high speed switching and low power consumption application.

Thermoelastic effect on inter-laminar embedded delamination characteristics in Spar Wingskin Joints made with laminated FRP composites

P.K. Mishra,A.K. Pradhan,M.K. Pandit,S.K. Panda 국제구조공학회 2020 Steel and Composite Structures, An International J Vol.35 No.3

This paper presents two sets of full three-dimensional thermoelastic finite element analyses of superimposed thermo-mechanically loaded Spar Wingskin Joints made with laminated Graphite Fiber Reinforced Plastic composites. The study emphasizes the influence of residual thermal stresses and material anisotropy on the inter-laminar delamination behavior of the joint structure. The delamination has been pre-embedded at the most likely location, i.e., in resin layer between the top and next ply of the fiber reinforced plastic laminated wingskin and near the spar overlap end. Multi-Point Constraint finite elements have been made use of at the vicinity of the delamination fronts. This helps in simulating the growth of the embedded delamination at both ends. The inter-laminar thermoelastic peel and shear stresses responsible for causing delamination damage due to a combined thermal and a static loading have been evaluated. Strain energy release rate components corresponding to the Mode I (opening), Mode II (sliding) and Mode III (tearing) of delamination are determined using the principle of Virtual Crack Closure Technique. These are seen to be different and non-self-similar at the two fronts of the embedded delamination. Residual stresses developed due to the thermoelastic anisotropy of the laminae are found to strongly influence the delamination onset and propagation characteristics, which have been reflected by the asymmetries in the nature of energy release rate plots and their significant variation along the delamination front.

A Study of SCEs and Analog FOMs in GS-DG-MOSFET with Lateral Asymmetric Channel Doping

Sahu, P.K.,Mohapatra, S.K.,Pradhan, K.P. The Institute of Electronics and Information Engin 2013 Journal of semiconductor technology and science Vol.13 No.6

The design and analysis of analog circuit application on CMOS technology are a challenge in deep sub-micrometer process. This paper is a study on the performance value of Double Gate (DG) Metal Oxide Semiconductor Field Effect Transistor (MOSFET) with Gate Stack and the channel engineering Single Halo (SH), Double Halo (DH). Four different structures have been analysed keeping channel length constant. The short channel parameters and different sub-threshold analog figures of merit (FOMs) are analysed. This work extensively provides the device structures which may be applicable for high speed switching and low power consumption application.

Some Device Design Considerations to Enhance the Performance of DG-MOSFETs

S K Mohapatra,K P Pradhan,P K Sahu 한국전기전자재료학회 2013 Transactions on Electrical and Electronic Material Vol.14 No.6

When subjected to a change in dimensions, the device performance decreases. Multi-gate SOI devices, viz. the Double Gate MOSFET (DG-MOSFET), are expected to make inroads into integrated circuit applications previously dominated exclusively by planar MOSFETs. The primary focus of attention is how channel engineering (i.e. Graded Channel (GC))and gate engineering (i.e. Dual Insulator (DI)) as gate oxide) creates an effect on the device performance, specifically,leakage current (Ioff), on current (Ion), and DIBL. This study examines the performance of the devices, by virtue of a simulation analysis, in conjunction with N-channel DG-MOSFETs. The important parameters for improvement in circuit speed and power consumption are discussed. From the analysis, DG-DI MOSFET is the most suitable candidate for high speed switching application, simultaneously providing better performance as an amplifier.

Some Device Design Considerations to Enhance the Performance of DG-MOSFETs

Mohapatra, S.K.,Pradhan, K.P.,Sahu, P.K. The Korean Institute of Electrical and Electronic 2013 Transactions on Electrical and Electronic Material Vol.14 No.6

When subjected to a change in dimensions, the device performance decreases. Multi-gate SOI devices, viz. the Double Gate MOSFET (DG-MOSFET), are expected to make inroads into integrated circuit applications previously dominated exclusively by planar MOSFETs. The primary focus of attention is how channel engineering (i.e. Graded Channel (GC)) and gate engineering (i.e. Dual Insulator (DI)) as gate oxide) creates an effect on the device performance, specifically, leakage current ($I_{off}$), on current ($I_{on}$), and DIBL. This study examines the performance of the devices, by virtue of a simulation analysis, in conjunction with N-channel DG-MOSFETs. The important parameters for improvement in circuit speed and power consumption are discussed. From the analysis, DG-DI MOSFET is the most suitable candidate for high speed switching application, simultaneously providing better performance as an amplifier.

Temperature and Frequency Dependent Multiferroic Features of Gadolinium Doped BiFeO3 -PbTiO3 Electronic System

S. K. Pradhan,S. N. Das,S. Bhuyan,Seshadev Sahoo,R. N. P. Choudhary 한국전기전자재료학회 2020 Transactions on Electrical and Electronic Material Vol.21 No.2

Multiferroic gadolinium (Gd) doped BiFeO 3 (BFO) and PbTiO 3 (PT) samples [(Pb 1−x Bi 0.5x Gd 0.5x )(Fe x Ti 1−x )O 3 ] with x = 0.1, 0.3, 0.5 and 0.7 are formulated by adopting the solid state reaction process. The impact of gadolinium substitution in the crystal structure, morphological behavior and electrical properties has been studied. By altering the Gd concentration in the solid solution a change in the structure is observed that is from tetragonal to rhombohedral. The size of the grain in the compounds reduces as a result of enrich in gadolinium content of the furnished sample. The subsidence of lead minimizes the toxic behavior of the material with significant improvements in dielectric response of gadolinium modifi ed BiFeO3 – PbTiO 3synthesized system. From the impedance study, the material presents negative temperature coefficient of resistance characteristics and the impedance is due to the presence of grain and grain boundary eff ect inside the materials. It is realized that the remnant polarization decreases and frequency dependent ac conductivity increases with the concentration of gadolinium in the electronic system. From conductivity study, the equipped electronic materials show non-exponential type of conductivity relaxation.

Environmental Microbiology and Engineering : Microalga Scenedesmus sp.: A Potential Low-Cost Green Machine for Silver Nanoparticle Synthesis

( Jaya Shree Jena ),( Nilotpala Pradhan ),( Rati Ranjan Nayak ),( Bishnu P Dash ),( Lala Behari Sukla ),( Prasanna K Panda ),( Barada K Mishra ) 한국미생물 · 생명공학회 2014 Journal of microbiology and biotechnology Vol.24 No.4

Bionanotechnology has revolutionized nanomaterial synthesis by providing a green synthetic platform using biological systems. Among such biological systems, microalgae have tremendous potential to take up metal ions and produce nanoparticles by a detoxification process. The present study explores the intracellular and extracellular biogenic syntheses of silver nanoparticles (SNPs) using the unicellular green microalga Scenedesmus sp. Biosynthesized SNPs were characterized by AAS, UV-Vis spectroscopy, TEM, XRD, FTIR, DLS, and TGA studies and finally checked for antibacterial activity. Intracellular nanoparticle biosynthesis was initiated by a high rate of Ag+ ion accumulation in the microalgal biomass and subsequent formation of spherical crystalline SNPs (average size, 15-20 nm) due to the biochemical reduction of Ag+ ions. The synthesized nanoparticles were intracellular, as confirmed by the UV-Vis spectra of the outside medium. Furthermore, extracellular synthesis using boiled extract showed the formation of well scattered, highly stable, spherical SNPs with an average size of 5-10 nm. The size and morphology of the nanoparticles were confirmed by TEM. The crystalline nature of the SNPs was evident from the diffraction peaks of XRD and bright circular ring pattern of SAED. FTIR and UV-Vis spectra showed that biomolecules, proteins and peptides, are mainly responsible for the formation and stabilization of SNPs. Furthermore, the synthesized nanoparticles exhibited high antimicrobial activity against pathogenic gram-negative and gram-positive bacteria. Use of such a microalgal system provides a simple, cost-effective alternative template for the biosynthesis of nanomaterials in a large-scale system that could be of great use in biomedical applications.

Structural, Morphological, Electrical and Impedance Spectroscopy Investigation of Pb 1/2 Ba 1/2 Ni 1/2 W 1/2 O 3 Electronic Material

S. Kalingani,Satyaprakash Narayan Das,S. K. Pradhan,S. Bhuyan,R. N. P. Choudhary 한국전기전자재료학회 2023 Transactions on Electrical and Electronic Material Vol.24 No.1

In this present study the (Pb 1/2 Ba 1/2 )(Ni 1/2 W 1/2 )O 3 , [PBNW] perovskite compound has been formulated and synthesized by adopting a solid-state reaction technique. The detailed structural, morphological, and electrical characterization has been carried out to explore its characteristics for further application in the field of electronic devices and sensors. With the help of x-ray diff raction analysis orthorhombic structure has been recognized. Dielectric, impedance spectroscopy, and a.c. conductivity analysis has been carried out through a wide range of temperatures as well as frequency (temperature range 25–500 °C, frequency range 1 kHz to 1 MHz). Presence of a single semi-circular arc from Nyquist analysis points toward the grain contribution of the sample. An equivalent circuit model has been developed to explore its electrical behavior. The activation energy, as well as the charge carrier mobility, has been estimated. Methodical studies for dielectric properties at high temperatures are accomplished for analysing electrical inhomogeneity allied with surfaces, grain boundaries, or grains, which are imperative for fundamental characterization and device fabrication.