http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Interference Effect betweenϕandΛ(1520)Production Channels in theγp→K+K−pReaction near Threshold
Ryu, S. Y.,Ahn, J. K.,Nakano, T.,Ahn, D. S.,Ajimura, S.,Akimune, H.,Asano, Y.,Chang, W. C.,Chen, J. Y.,Daté,, S.,Ejiri, H.,Fujimura, H.,Fujiwara, M.,Fukui, S.,Hasegawa, S.,Hicks, K.,Horie, K.,Ho American Physical Society 2016 Physical Review Letters Vol.116 No.23
<P>The phi-Lambda(1520) interference effect in the gamma p -> K(+)K(-)p reaction has been measured for the first time in the energy range from 1.673 to 2.173 GeV. The relative phases between phi and Lambda(1520) production amplitudes were obtained in the kinematic region where the two resonances overlap. The measurement results support strong constructive interference when K+K- pairs are observed at forward angles but destructive interference for proton emission at forward angles. Furthermore, the observed interference effect does not account for the root s = 2.1 GeV bump structure in forward differential cross sections for phi photoproduction. This fact suggests possible exotic structures such as a hidden-strangeness pentaquark state, a new Pomeron exchange, or rescattering processes via other hyperon states.</P>
저에너지 양전자 소멸 분광법을 이용한 MgB<sub>2</sub> 박막 구조 특성
Lee, C.Y.,Kang, W.N.,Nagai, Y.,Inoue, K.,Hasegawa, M. 한국진공학회 2008 Applied Science and Convergence Technology Vol.17 No.2
저속 에너지 도플러 넓어짐 양전자 소멸 분광법으로 $MgB_2$ 박막내의 원자 크기 정도 고체 구조 특성에 대하여 조사하였다. 양전자와 전자의 쌍소멸로 발생하는 511keV 감마선 스펙트럼의 수리적 해석 방법인 S-변수를 사용하여, 상전이 근처 온도에서 박막의 구조 변화를 측정하였다. 비등방성 구조로 된 $MgB_2$ 박막에서 초전도 특성을 갖는 상전이 온도 근처에서 S-변수를 측정하였다. 양전자의 입사 에너지 10keV에서 측정된 S-변수의 최고치는 박막의 온도가 30K에서 0.567이고, 50 K에서는 0.570로 큰 변화는 없었다. 이 결과로부터 양전자가 Boron 층의 초 전자와 소멸하기 보다는 Mg층 근처의 상 전자와 소멸하는 것으로 판단된다. $MgB_2$의 박막의 외층은 Mg층으로 이루어졌다고 할 수 있다. The Characterization of $MgB_2$ Thin Film by Slow Positron Annihilation Spectroscopy Enhance signal-to-noise ratio, slow positron coincidence Doppler Broadening method has been applied to study of characteristics of $MgB_2$ superconductor film, which were performed at 30 K and 50 K sample temperature near Tc of it. In this investigation the numerical analysis of the Doppler spectra was employed to the determination of the shape parameter, S, defined as the ratio between the amount of counts in a central portion of the spectrum and the total counts of whole spectrum. The S-parameter values were increased then decreased while the positron implantation energies were increasing, that indicated the diffusion into the samples. The S-parameters of the anisotropic 1 ${\mu}m$ $MgB_2$ thin film which were implanted by positrons at 10 keV are 0.567 at 30 K and 0.570 at 50 K. It is believed that the positrons annihilate with normal-electrons instead of super-electrons in the $MgB_2$ superconductor.
저에너지 양전자 소멸 분광법을 이용한 MgB₂ 박막 구조 특성
이종용(C. Y. Lee),강원남(W. N. Kang),M. Hasegawa,Y. Nagai,K. Inoue 한국진공학회(ASCT) 2008 Applied Science and Convergence Technology Vol.17 No.2
저속 에너지 도플러 넓어짐 양전자 소멸 분광법으로 MgB₂ 박막내의 원자 크기 정도 고체 구조 특성에 대하여 조사하였다. 양전자와 전자의 쌍소멸로 발생하는 511keV 감마선 스펙트럼의 수리적 해석 방법인 S-변수를 사용하여, 상전이 근처 온도에서 박막의 구조 변화를 측정하였다. 비등방성 구조로 된 MgB₂ 박막에서 초전도 특성을 갖는 상전이 온도 근처에서 S-변수를 측정하였다. 양전자의 입사 에너지 10keV에서 측정된 S-변수의 최고치는 박막의 온도가 30K에서 0.567이고, 50 K에서는 0.570로 큰 변화는 없었다. 이 결과로부터 양전자가 Boron 층의 초 전자와 소멸하기 보다는 Mg층 근처의 상 전자와 소멸하는 것으로 판단된다. MgB₂의 박막의 외층은 Mg층으로 이루어졌다고 할 수 있다. Enhance signal-to-noise ratio, slow positron coincidence Doppler Broadening method has been applied to study of characteristics of MgB₂ superconductor film, which were performed at 30 K and 50 K sample temperature near Tc of it. In this investigation the numerical analysis of the Doppler spectra was employed to the determination of the shape parameter, S, defined as the ratio between the amount of counts in a central portion of the spectrum and the total counts of whole spectrum. The S-parameter values were increased then decreased while the positron implantation energies were increasing, that indicated the diffusion into the samples. The S-parameters of the anisotropic 1 ㎛ MgB₂ thin film which were implanted by positrons at 10 keV are 0.567 at 30 K and 0.570 at 50 K. It is believed that the positrons annihilate with normal-electrons instead of super-electrons in the MgB₂ superconductor.
Nakayama, S.,Mauger, C.,Ahn, M.H.,Aoki, S.,Ashie, Y.,Bhang, H.,Boyd, S.,Casper, D.,Choi, J.H.,Fukuda, S.,Fukuda, Y.,Gran, R.,Hara, T.,Hasegawa, M.,Hasegawa, T.,Hayashi, K.,Hayato, Y.,Hill, J.,Ichikawa Elsevier 2005 Physics letters: B Vol.619 No.3
<P><B>Abstract</B></P><P>Neutral current single <SUP>π0</SUP> production induced by neutrinos with a mean energy of 1.3 GeV is measured using a 1000 ton water Cherenkov detector in the K2K long baseline neutrino experiment. The cross section for this process relative to the total charged current cross section is measured to be 0.064±0.001(stat.)±0.007(sys.). The momentum distribution of neutral current <SUP>π0</SUP>s from a water target is measured with high statistics for the first time.</P>
Development of Water Assisted Solid State Reaction for the Ceramic Materials
Toda, Kenji,Kim, Sun Woog,Hasegawa, Takuya,Watanabe, Mizuki,Kaneko, Tatsuro,Toda, Ayano,Yamanashi, Ryota,Kumagai, Shota,Muto, Masaru,Itadani, Atsushi,Sato, Mineo,Uematsu, Kazuyoshi,Ishigaki, Tadashi,K Trans Tech Publications, Ltd. 2017 Key Engineering Materials Vol.751 No.-
<P>We report a novel soft chemical synthesis method, water assisted solid state reaction (WASSR) method. This method is very simple and can synthesize many ceramic materials just by storing or mixing raw materials added a small amount of water in a reactor at low temperature below 373 K. For example, well-crystalline SrMoO4 was obtained using the WASSR method.</P>
Hasegawa, K.,Yoshikawa, A.,Durbin, S.D.,Epellbaum, B.M.,Fukuda, T.,Waku, Y. The Korea Association of Crystal Growth 1999 韓國結晶成長學會誌 Vol.9 No.4
Fiber growth of $Al_{2}O_{3}/R-Al-O$ (R = Y, Gd, Dy, Ho, Er) eutectic by the micro-pulling down method is described. The thermal stability and strength at elevated temperature of each materials is evaluated in relation to the microstructure.
Lightcurve survey of V-type asteroids in the inner asteroid belt
Hasegawa, S.,Miyasaka, S.,Mito, H.,Sarugaku, Y.,Ozawa, T.,Kuroda, D.,Nishihara, S.,Harada, A.,Yoshida, M.,Yanagisawa, K.,Shimizu, Y.,Nagayama, S.,Toda, H.,Okita, K.,Kawai, N.,Mori, M.,Sekiguchi, T.,Is Astronomical Society of Japan 2014 Publications of the Astronomical Society of Japan Vol.66 No.3
Ellipso-Microscopic Observation of Titanium Surface under UV-Light Irradiation
( K. Fushimi ),( K. Kurauchi ),( T. Nakanishi ),( Y. Hasegawa ),( M. Ueda ),( T. Ohtsuka ) 한국부식방식학회(구 한국부식학회) 2016 Corrosion Science and Technology Vol.15 No.6
The ellipso-microscopic observation of a titanium surface undergoing anodization in 0.05 mol dm<sup>-3</sup> of H<sub>2</sub>SO<sub>4</sub> was conducted. During irradiation by ultra-violet (UV) light with a wavelength of 325 nm, the titanium surface allowed for the flow of a photo-induced current and showed up as a bright, patch-like image on an ellipso-microscopic view. The brightness and patch-pattern in the image changed with flowing photo-induced current. The changes in the brightness and the image corresponded to the formation and/or degradation of titanium oxide due to the photo-electrochemical reaction of the oxide. An in situ monitoring using the ellipso-microscope revealed that the film change was dependent on the irradiation light power, by UV-light increases the anodic current and results in the initiation of pitting at lower potentials as compared with the non-irradiated condition.