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Self-erasable titanium oxide resistive memory devices
Jang, Jingon,Choi, Han-Hyeong,Kim, Minsung,Kim, Jai Kyeong,Chung, Seungjun,Park, Jong Hyuk Elsevier 2019 Journal of industrial and engineering chemistry Vol.78 No.-
<P><B>Abstract</B></P> <P>We fabricated a titanium oxide (TiO<SUB>2</SUB>) resistive memory device utilized to naturally erasable device with a simple cross-bar array structure inhibiting sneak paths using selecting property. The Al/TiO<SUB>2</SUB>/Al memory device showed conventional nonvolatile and bipolar resistive switching properties with a vacancy-based drift conduction procedure. The conducting filament could be removed through redistribution of the oxygen vacancy to the active bulk region resulting in self-erasable properties, which have made it possible to guide unwanted information to be removed naturally. This self-erasable memory device has the potential to be utilized for the storage of susceptible information which should be eliminated after a sufficient length of time.</P> <P><B>Graphical abstract</B></P> <P>[DISPLAY OMISSION]</P>
Non-volatile memory characteristics of polyimide layers embedded with ZnO nanowires
Jingon Jang,Woanseo Park,Kyungjune Cho,송현욱,이탁희 한국물리학회 2013 Current Applied Physics Vol.13 No.7
We fabricated 8 8 cross-bar array-type organic non-volatile memory devices of polyimide (PI) layers embedded with ZnO nanowires. The ZnO nanowires were synthesized by chemical vapor deposition and deposited into the PI layers by a solution coating process. The devices of PI layer without ZnO nanowires showed an insulating characteristic without exhibiting any memory behavior. The ZnO nanowires acted as carrier trapping sites in the insulating PI layers for our memory devices. The organic memory devices exhibited write-once-read-many-times-type non-volatile memory characteristics with an excellent ON/OFF switching ratio over 106, good uniformity in cumulative probability, and stability without serious degradation over 104 s.
Lee, Woocheol,Jang, Jingon,Song, Younggul,Cho, Kyungjune,Yoo, Daekyoung,Kim, Youngrok,Chung, Seungjun,Lee, Takhee IOP Pub 2017 Nanotechnology Vol.28 No.13
<P>We fabricated 8?×?8 arrays of non-volatile resistive memory devices on commercially available Scotch<SUP>®</SUP> Magic<SUP>™</SUP> tape as a flexible substrate. The memory devices consist of double active layers of Al<SUB>2</SUB>O<SUB>3</SUB> with a structure of Au/Al<SUB>2</SUB>O<SUB>3</SUB>/Au/Al<SUB>2</SUB>O<SUB>3</SUB>/Al (50 nm/20 nm/20 nm/20 nm/50 nm) on attachable tape substrates. Because the memory devices were fabricated using only dry and low temperature processes, the tape substrate did not suffer from any physical or chemical damage during the fabrication. The fabricated memory devices were turned to the low resistance state at ∼3.5 V and turned to the high resistance state at ∼10 V with a negative differential resistance region after ∼5 V, showing typical unipolar non-volatile resistive memory behavior. The memory devices on the tape substrates exhibited reasonable electrical performances including a high ON/OFF ratio of 10<SUP>4</SUP>, endurance over 200 cycles of reading/writing processes, and retention times of over 10<SUP>4</SUP> s in both the flat and bent configurations.</P>
Frame Design and Throughput Evaluation for Practical Multiuser MIMO OFDMA Systems
Yong-Up Jang,Jingon Joung,Won-Yong Shin,Eui-Rim Jeong IEEE 2011 IEEE TRANSACTIONS ON VEHICULAR TECHNOLOGY Vol.60 No.7
<P>This paper describes the design of a time-division duplexing frame with a variety of pilots for multiuser multiple-input-multiple-output orthogonal frequency-division multiple access (MU-MIMO OFDMA) systems, where the base station and users are equipped with four and two transmitting and receiving antennas, respectively. In addition, a simplified scheduling algorithm for the MU-MIMO OFDMA is proposed, and its computational complexity is analyzed. The proposed scheduling algorithm shows comparable sum achievable rates to the optimal MU-MIMO OFDMA scheduling that searches for user pairs in an exhaustive manner, whereas its complexity is fairly reduced. Furthermore, to verify the performance of MU-MIMO OFDMA systems that employ the proposed frame structure and scheduling algorithm, a system-level comparison of the average cell throughputs between the proposed MU-MIMO and the conventional MIMO OFDMA systems is numerically performed in a practical cellular environment. As a result, vital information on how we can apply MU-MIMO OFDMA schemes in cellular environments is provided.</P>
Song, Younggul,Jang, Jingon,Yoo, Daekyoung,Jung, Seok-Heon,Jeong, Hyunhak,Hong, Seunghun,Lee, Jin-Kyun,Lee, Takhee American Scientific Publishers 2016 Journal of Nanoscience and Nanotechnology Vol.16 No.6
<P>We present the integration of flexible and microscale organic nonvolatile resistive memory devices fabricated in a cross-bar array structure on plastic substrates. This microscale integration was made via orthogonal photolithography method using fluorinated photoresist and solvents and was achieved without causing damage to the underlying organic memory materials. Our flexible microscale organic devices exhibited high ON/OFF ratio (I-ON/I-OFF > 10(4)) under bending conditions. In addition, the ON and OFF states of our flexible and microscale memory devices were maintained for 10,000 seconds without any serious degradation.</P>
1/<i>f</i> Noise Scaling Analysis in Unipolar-Type Organic Nanocomposite Resistive Memory
Song, Younggul,Jeong, Hyunhak,Jang, Jingon,Kim, Tae-Young,Yoo, Daekyoung,Kim, Youngrok,Jeong, Heejun,Lee, Takhee American Chemical Society 2015 ACS NANO Vol.9 No.7
<P>We studied noise characteristics of a nanocomposite of polyimide (PI) and phenyl-C61-butyric acid methyl ester (PCBM) (denoted as PI:PCBM), a composite for the organic nonvolatile resistive memory material. The current fluctuations were investigated over a bias range that covers various intermediate resistive states and negative differential resistance (NDR) in organic nanocomposite unipolar resistive memory devices. From the analysis of the 1/<I>f</I><SUP>γ</SUP> type noises, scaling behavior between the relative noise power spectral density <I>S̃</I> and resistance <I>R</I> was observed, indicating a percolating behavior. Considering a linear rate equation of the charge trapping–detrapping at traps, the percolation behavior and NDR could be understood by the modulation of the conductive phase fraction φ with an external bias. This study can enhance the understanding of the NDR phenomena in organic nanocomposite unipolar resistive memory devices in terms of the current path formation and the memory switching.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/ancac3/2015/ancac3.2015.9.issue-7/acsnano.5b03168/production/images/medium/nn-2015-03168q_0006.gif'></P><P><A href='http://pubs.acs.org/doi/suppl/10.1021/nn5b03168'>ACS Electronic Supporting Info</A></P>
Kang, Beom-Goo,Jang, Jingon,Song, Younggul,Kim, Myung-Jin,Lee, Takhee,Lee, Jae-Suk The Royal Society of Chemistry 2015 Polymer chemistry Vol.6 No.23
<▼1><P>A well-defined block copolymer containing a thermally cross-linkable ethynyl group has been synthesized by living anionic polymerization for polymer-based resistive memory device applications.</P></▼1><▼2><P>The reactivities of 4-[(trimethylsilyl)ethynyl]styrene (A) and 4,4′-vinylphenyl-<I>N</I>,<I>N</I>-bis(4-<I>tert</I>-butylphenyl)benzenamine (B) were investigated by sequential anionic block copolymerization to synthesize a thermally cross-linkable block copolymer for memory device applications. From the investigation on the reactivities of the monomers, the well-defined poly(B-<I>b</I>-A) was synthesized in a simple manner by sequential addition of B as the first monomer and A as the second monomer using the commercially available <I>s</I>-butyllithium (<I>s</I>-BuLi) initiator in THF at −78 °C. The sequential deprotection was then performed to prepare the deprotected polymer (d-poly(B-<I>b</I>-A)) containing the triphenylamine group as the conducting moiety and the ethynyl group as the thermal cross-linker, and the resulting thermally cross-linked polymer was used as an active layer of the memory device. The device fabricated with cross-linked d-poly(B-<I>b</I>-A) exhibited the write-once-read-many times (WORM) nonvolatile memory behavior, which is governed by the space-charge-limited current (SCLC) conduction mechanism and filament formation.</P></▼2>