Facile anionic synthesis of a well-controlled thermally cross-linkable block copolymer for polymer-based resistive memory device applications

다국어 초록 (Multilingual Abstract)

<▼1><P>A well-defined block copolymer containing a thermally cross-linkable ethynyl group has been synthesized by living anionic polymerization for polymer-based resistive memory device applications.</P></▼1><▼2><P>The reactivities of 4-[(trimethylsilyl)ethynyl]styrene (A) and 4,4′-vinylphenyl-<I>N</I>,<I>N</I>-bis(4-<I>tert</I>-butylphenyl)benzenamine (B) were investigated by sequential anionic block copolymerization to synthesize a thermally cross-linkable block copolymer for memory device applications. From the investigation on the reactivities of the monomers, the well-defined poly(B-<I>b</I>-A) was synthesized in a simple manner by sequential addition of B as the first monomer and A as the second monomer using the commercially available <I>s</I>-butyllithium (<I>s</I>-BuLi) initiator in THF at −78 °C. The sequential deprotection was then performed to prepare the deprotected polymer (d-poly(B-<I>b</I>-A)) containing the triphenylamine group as the conducting moiety and the ethynyl group as the thermal cross-linker, and the resulting thermally cross-linked polymer was used as an active layer of the memory device. The device fabricated with cross-linked d-poly(B-<I>b</I>-A) exhibited the write-once-read-many times (WORM) nonvolatile memory behavior, which is governed by the space-charge-limited current (SCLC) conduction mechanism and filament formation.</P></▼2>