The Power of Building Parallel Institutions: How China’s New Strategy Advances Global Governance Reform

Yue Xu,Hongsong Liu 경남대학교 극동문제연구소 2022 ASIAN PERSPECTIVE Vol.46 No.4

China has been a proponent of global governance reform, but its reform strategy does not remain constant. In the wake of the Global Financial Crisis, its political opportunities were depleting when dominant states, especially the United States, were recovering from the crisis. As a result, the promised 2010 International Monetary Fund (IMF) reform package failed to materialize under Beijing’s old reform strategy of making overt proposals. We argue that Beijing’s goal of the IMF reform was achieved through the creation of the Asian Infrastructure Investment Bank. To advance reform, the newly-created institution needs to have sufficient governance capacity to ensure its effectiveness, produce policy outcomes close to Beijing’s preferences, and operate in an issue area competing for resources with the established institution, the IMF, but not necessarily in the same issue area as is required by the literature of contested multilateralism.

Channel and Gate Workfunction-Engineered CNTFETs for Low-Power and High-Speed Logic and Memory Applications

Wang, Wei,Xu, Hongsong,Huang, Zhicheng,Zhang, Lu,Wang, Huan,Jiang, Sitao,Xu, Min,Gao, Jian The Institute of Electronics and Information Engin 2016 Journal of semiconductor technology and science Vol.16 No.1

Carbon Nanotube Field-Effect Transistors (CNTFETs) have been studied as candidates for post Si CMOS owing to the better electrostatic control and high mobility. To enhance the immunity against short - channel effects (SCEs), the novel channel and gate engineered architectures have been proposed to improve CNTFETs performance. This work presents a comprehensive study of the influence of channel and gate engineering on the CNTFET switching, high frequency and circuit level performance of carbon nanotube field-effect transistors (CNTFETs). At device level, the effects of channel and gate engineering on the switching and high frequency characteristics for CNTFET have been theoretically investigated by using a quantum kinetic model. This model is based on two-dimensional non-equilibrium Green's functions (NEGF) solved self - consistently with Poisson's equations. It is revealed that hetero - material - gate and lightly doped drain and source CNTFET (HMG - LDDS - CNTFET) structure can significantly reduce leakage current, enhance control ability of the gate on channel, improve the switching speed, and is more suitable for use in low power, high frequency circuits. At circuit level, using the HSPICE with look - up table(LUT) based Verilog - A models, the impact of the channel and gate engineering on basic digital circuits (inverter, static random access memory cell) have been investigated systematically. The performance parameters of circuits have been calculated and the optimum metal gate workfunction combinations of ${\Phi}_{M1}/{\Phi}_{M2}$ have been concluded in terms of power consumption, average delay, stability, energy consumption and power - delay product (PDP). In addition, we discuss and compare the CNTFET-based circuit designs of various logic gates, including ternary and binary logic. Simulation results indicate that LDDS - HMG - CNTFET circuits with ternary logic gate design have significantly better performance in comparison with other structures.

Channel and Gate Workfunction-Engineered CNTFETs for Low-Power and High-Speed Logic and Memory Applications

Wei Wang,Hongsong Xu,Zhicheng Huang,Lu Zhang,Huan Wang,Sitao Jiang,Min Xu,Jian Gao 대한전자공학회 2016 Journal of semiconductor technology and science Vol.16 No.1

Carbon Nanotube Field-Effect Transistors (CNTFETs) have been studied as candidates for post Si CMOS owing to the better electrostatic control and high mobility. To enhance the immunity against short - channel effects (SCEs), the novel channel and gate engineered architectures have been proposed to improve CNTFETs performance. This work presents a comprehensive study of the influence of channel and gate engineering on the CNTFET switching, high frequency and circuit level performance of carbon nanotube field-effect transistors (CNTFETs). At device level, the effects of channel and gate engineering on the switching and high frequency characteristics for CNTFET have been theoretically investigated by using a quantum kinetic model. This model is based on two-dimensional non-equilibrium Green’s functions (NEGF) solved self - consistently with Poisson’s equations. It is revealed that hetero -material - gate and lightly doped drain and source CNTFET (HMG - LDDS - CNTFET) structure can significantly reduce leakage current, enhance control ability of the gate on channel, improve the switching speed, and is more suitable for use in low power, high frequency circuits. At circuit level, using the HSPICE with look - up table(LUT) based Verilog - A models, the impact of the channel and gate engineering on basic digital circuits (inverter, static random access memory cell) have been investigated systematically. The performance parameters of circuits have been calculated and the optimum metal gate workfunction combinations of ФM1/ФM2 have been concluded in terms of power consumption, average delay, stability, energy consumption and power - delay product (PDP). In addition, we discuss and compare the CNTFET-based circuit designs of various logic gates, including ternary and binary logic. Simulation results indicate that LDDS - HMG - CNTFET circuits with ternary logic gate design have significantly better performance in comparison with other structures.

Optimization of the Field Shaper Parameters in Electromagnetic Pulse Crimping of Cable

Fen-Qiang Li,Jishuai Jiang,Hongsong Cheng,Jianling Xu,Xiaohong Ge,Hui Li,Jun Zhao,Yang Ran 한국정밀공학회 2021 International Journal of Precision Engineering and Vol.22 No.10

Crimping of wires to achieve a secure connection is one of the most critical challenges in fabrication of electronic circuit boards, automobiles, aviation, satellite and communication components. The electromagnetic pulse crimping process offers great potential to successfully address these challenges. In this paper, ANSYS/Multi physical software was used to first determine the electromagnetic force distribution on the terminal lug by analyzing the magnetic field in the electromagnetic pulse crimping process. The electromagnetic force was then imported into the ABAQUS/Explicit software as the boundary condition to calculate the deformation behavior of the terminal lug barrel and cable according to the stress–strain curve of the terminal material under high strain rate. The calculated deformation result was subsequently verified by experimental data. Three main parameters of the field shaper were analyzed to determine their influence on the crimping result; slit position, the inner diameter vertical dimension and the position relationship between the terminal lug and field shaper. Then using the empirical formula we calculated and verified the inner diameter vertical dimension of the field shaper. The model proved to be reliable. Deformation of the terminal was determined to be uneven along the circumference in the crimping area. For the type of terminal lug studied, an inner diameter vertical dimension of 10 mm proved to be optimum for increased strength of the crimped terminal connection. Allowing the terminal to protrude 1 mm from the field shaper resulted in a flatter crimped area and significant improvement in the quality of the crimped barrel surface. The empirical formula for calculating the inner diameter vertical dimension of the field shaper is reasonable and reliable, and the calculated measurement resulted in improved connection strength. The results of this research can be used to guide the electromagnetic pulse crimping of other terminal lug and cable types.