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초에너지 이온주입에 의한 초저접합 형성시 발생하는 Deactivation 현상에 관한 연구
盧在相,柳漢權 弘益大學校 科學基術硏究所 1999 科學技術硏究論文集 Vol.10 No.2
Semiconductor proces sing technologies have progressed toward ULSI(Ultra Large Scale Integration) regime to enhance packing density and operating speed and reduce power consumption. For these reasons, not only horizontal dimensions but also vertical dimensions will continue to be decreased to minimize short-channel effect such as punchthrough. Since an As ion has a rather high mass and low diffusivity during annealing, the formation of n??/p shallow junction is relatively easy. However, the formation of p??/n junction is difficult because a B ion is light and shows significant diffusion during annealing. Ultra shallow p??/n junction is formed by ULE(ultra low energy) implanter and RTA(Rapid Thermal Annealing). In this study deactivation phenomena was investigated according to various post-annealing condition after the formation of ultra shallow p??/n junction.
MeV이온주입을 사용하여 Buried Layer를 포함한 CMOS Retrograde Well 제조시 발생하는 격자 결함에 관한 연구
盧在相,柳承翰,柳漢權 弘益大學校 科學技術硏究所 1998 科學技術硏究論文集 Vol.9 No.2
MeV ion implantation has been recently employed in the field of CMOS (complementary metal oxide semiconductor) retrograde well engineering. An issue on MeV ion induced damage is critical especially in forming a buried layer below the well. MeV B implanted buried layers were observed to show greatly improved characteristics of latchup suppression. Junction leakage current, however, showed a critical behavior as a function of ion does. The rod like defects were observed to be responsible for the leakage current. Rod-like defects were generated near the ??(projected range) and grown upward to the surface during annealing. According to cross sectional examination of each pit density, they were generated and propagated between 700。C and 800。C. They shrink or change into long, elongated dislocation loops at higher temperatures above 900。C. Results of SIMS (secondary ion mass spectroscopy) analyses and two-step-annealing (700。C/3∼6hrs.→900。C/1hr.) indicate that interstitial oxygens impede shrinkage of existing-g rod-like defects at higher temperatures above 900。C.
Ce_(0.8)Zr_(0.2)O₂ 촉매를 이용한 Dimethyl Carbonate 합성에서 탈수제 첨가의 영향
한기보,전진혁,박노국,이종대,류시옥,이태진,이병권,안병성 한국공업화학회 2004 응용화학 Vol.8 No.1
The effect of dehydrating agent in DMC(dimethyl carbonate) synthesis from methanol and carbon dioxide over Ce_(0.8)Zr_(0.2)O₂ catalyst was studied in this work. Ce_(0.8)Zr_(0.2)O₂ catalyst having the best activity among Ce_(1-x)Zr_(x)O₂ catalysts was selected. We could supposed that the addition of dehydrating agents improved the DMC yield by H₂O elimination. When the dehydrating agents such as Na_(2)SO₄ or K₂SO₄ was added into the synthesis of DMC, the formation amount of DMC increased to about 0.8∼0.9 mmol through the elimination of formed H₂O as by-product.
1.55-μm DFB lasers over a wide temperature range for analog application
Koo, Bon-Jo,Song, Han-Wook,Kim, Yong-Kwan,Park, Chil-Sung,Ryu, Han-Gwon,Huh, Kwang-Soo,Park, Seung-Bae,Lhee, Zail,Choe, Hyosin,Lee, Seok,Han, Sang-Kook Wiley Subscription Services, Inc., A Wiley Company 2006 MICROWAVE AND OPTICAL TECHNOLOGY LETTERS - Vol.48 No.2
<P>Strained-layer multiquantum-well distributed-feedback (SL-MQW-DFB) lasers at a wavelength of 1.55 μm operating from −40°C to 85°C without any coolers are demonstrated. The average value of IMD3 at 1.8 GHz and 5 mW operating conditions was −71 dBc, and the RIN at 2 mW was measured as 151 dB/Hz. The uncooled DFB lasers we have developed are very useful for mobile applications. © 2005 Wiley Periodicals, Inc. Microwave Opt Technol Lett 48: 273–275, 2006; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.21325</P>