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MeV이온주입을 사용하여 Buried Layer를 포함한 CMOS Retrograde Well 제조시 발생하는 격자 결함에 관한 연구
盧在相,柳承翰,柳漢權 弘益大學校 科學技術硏究所 1998 科學技術硏究論文集 Vol.9 No.2
MeV ion implantation has been recently employed in the field of CMOS (complementary metal oxide semiconductor) retrograde well engineering. An issue on MeV ion induced damage is critical especially in forming a buried layer below the well. MeV B implanted buried layers were observed to show greatly improved characteristics of latchup suppression. Junction leakage current, however, showed a critical behavior as a function of ion does. The rod like defects were observed to be responsible for the leakage current. Rod-like defects were generated near the ??(projected range) and grown upward to the surface during annealing. According to cross sectional examination of each pit density, they were generated and propagated between 700。C and 800。C. They shrink or change into long, elongated dislocation loops at higher temperatures above 900。C. Results of SIMS (secondary ion mass spectroscopy) analyses and two-step-annealing (700。C/3∼6hrs.→900。C/1hr.) indicate that interstitial oxygens impede shrinkage of existing-g rod-like defects at higher temperatures above 900。C.
Czochralski 법으로 성장시킨 단결정 실리콘 웨이퍼의 Internal Gettering 시 Denuded Zone 및 BMD 형성에 관한 연구
김현수,노재상,허태훈,유한권 대한금속재료학회(대한금속학회) 2000 대한금속·재료학회지 Vol.38 No.2
In this study we investigated the formation of denuded zone and bulk microdefects by three-step-annealing in a Czochralski grown silicon wafer. Three-step-annealing was performed in a sequence of high temperature (900-1100℃), low temperature (600-800℃) and medium temperature (850-950℃) respectively. Oxygen concentration profiles by outdiffusion in the 1st step annealing were calculated using error-function-solutions to Fick's 2nd law. Based on these results, denuded zone width were determined after the 2nd and the 3rd step annealing. The calculated values of denuded zone width were correlated well with the measured ones. The denuded zone width was found out to be proportional to the square root of denudation time (the 1st step annealing time). Morphological changes of bulk microdefects were observed according to changes of the 3rd step annealing time. Finally the effect of pre-oxidation on the changes of denuded zone width is also discussed.