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Gong, Su-Cheol,Chang, Ho-Jung Materials Research Society of Korea 2009 한국재료학회지 Vol.19 No.6
Polymer Light Emitting Diodes (PLEDs) with an ITO/PEDOT:PSS/PVK/PFO-poss/LiF/Al structure were prepared on plasma-treated ITO/glass substrates using spin-coating and thermal evaporation methods. The annealing effects of the PFO-poss film when it acts as the emission layer were investigated by using electrical and optical property measurements. The annealing conditions of the PFO-poss emission film were 100 and $200^{\circ}C$ for 1, 2 and 3 hours, respectively. The luminance increased and the turn-on voltage decreased when the annealing temperature and treatment time increased. After examining the Luminance-Voltage (L-V) properties of the PLED, the maximum luminance was found to be 1497 cd/$m^2$ at 11 V for the device when it was annealed at $200^{\circ}C$ for 3 hours. The peak intensity of the PLED emission spectra at approximately 525 nm in wavelength increased when the annealing temperature and time of the PFO-poss film increased. These results suggest that the light emission color shifted from blue to green.
Gong, Su-Cheol,Shin, Ik-Sup,Bang, Suk-Hwan,Kim, Hyun-Chul,Ryu, Sang-Ouk,Jeon, Hyeong-Tag,Park, Hyung-Ho,Yu, Chong-Hee,Chang, Ho-Jung The Korean Microelectronics and Packaging Society 2009 마이크로전자 및 패키징학회지 Vol.16 No.2
The organic-inorganic thin film transistors (OITFTs) with ZnO channel layer and the cross-linked PVP (Poly-4-vinylphenol) gate insulator were fabricated on the patterned ITO gate/glass substrate. ZnO channel layer was deposited by using atomic layer deposition (ALD). In order to improve the electrical properties, $O_2$ plasma treatment onto PVP film was introduced and investigated the effect of the plasma treatments on the electrical properties of the OITFTs. The field effect mobility and sub-threshold slope (SS) values of the OITFT decreased slightly from 0.24 to 0.16 $cm^2/V{\cdot}s$ and from 9.7 to 9.2 V/dec, respectively with increasing RF power from 30 to 50 Watt. The $I_{on/off}$ ratio was about $10^3$ for all samples with $O_2$ plasma treatment.
Gong, Su-Cheol,Ryu, Sang-Ouk,Bang, Seok-Hwan,Jung, Woo-Ho,Jeon, Hyeong-Tag,Kim, Hyun-Chul,Choi, Young-Jun,Park, Hyung-Ho,Chang, Ho-Jung The Korean Microelectronics and Packaging Society 2009 마이크로전자 및 패키징학회지 Vol.16 No.4
Two different organic-inorganic hybrid thin film transistors (OITFTs) with the structures of glass/ITO/ZnO/PMMA/Al (staggered structure) and glass/ITO/PMMA/ZnO/Al (inverted staggered structure), were fabricated and their electrical and structural properties were compared. The ZnO thin films used as active channel layers were deposited by the atomic layer deposition (ALD) method at a temperature of $100^{\circ}C$. To investigate the effect of the substrates on their properties, the ZnO films were deposited on bare glass, PMMA/glass and ITO/glass substrates and their crystal properties and surface morphologies were analyzed. The structural properties of the ZnO films varied with the substrate conditions. The ZnO film deposited on the ITO/glass substrate showed better crystallinity and morphologies, such as a higher preferred c-axis orientation, lower FWHM value and larger particle size compared with the one deposited on the PMMA/glass substrate. The field effect mobility ($\mu$), threshold voltage ($V_T$) and $I_{on/off}$ switching ratio for the OITFT with the staggered structure were about $0.61\;cm^2/V{\cdot}s$, 5.5 V and $10^2$, whereas those of the OITFT with the inverted staggered structure were found to be $0.31\;cm^2/V{\cdot}s$, 6.8 V and 10, respectively. The improved electrical properties for the staggered OITFTs may originate from the improved crystal properties and larger particle size of the ZnO active layer.
ITO 투명전극의 O₂ 플라즈마 처리가 고분자 유기발광다이오드의 전기ㆍ광학적 특성에 미치는 영향
공수철(Su Cheol Gong),백인재(In Jea Back),유재혁(Jea Huyk Yoo),임현승(Hun Sung Lim),양신혁(Sin Huyk Yang),신상배(Sang Bea Shin),신익섭(Ik Seup Shin),장지근(Gee Keun Chang),장호정(Ho Jung Chang) 한국표면공학회 2006 한국표면공학회지 Vol.39 No.3
Polymer light emitting diodes (PLEDs) are expected to be commercialized as next generation displays by advantages of the fast response time, low driving voltage and easy manufacturing process for large sized flexible display. Generally, the electrical and optical properties of PLEDs are affected by the surface conditions of transparent electrode. The PLED devices with ITO/PEDOT:PSS/PVK/PFO-poss/LiF/Al structures were prepared by using the spin coating method. For this, PEDOT:PSS(poly(3,4-ethylenedioxythiophene):poly(styrene sulfolnate)) Al 4083 and PVK(N-vinylcabozole) were used as hole injection and transport layers. The PFOposs(poly(9,9-dioctylfluorene)) was used as the emitting layer. The dependence of O₂ plasma treatment of ITO electrode on the electrical and optical properties of PLEDs were investigated. The sheet resistances increased slightly with an improved surface roughness of ITO electrode as the RF power increased during O₂ plasma treatment. The PLED devices prepared on the ITO/Glass substrates, which were plasma-treated at 40 watt in RF power for 30 seconds under 40 mtorr O₂ pressure, showed the maximum external emission efficiency of 0.86 lm/W and the maximum luminance of 250 cd/m², respectively. The CIE color coordinates are ranged X = 0.13~0.18 and Y = 0.10~0.16, showing blue color. emission.
MEH-PPV 농도에 따른 고분자OLED의 제작과 특성평가
공수철(Gong Su-cheol),장호정(Chang Ho Jung),백인재(Baek In-jae),임현승(Lim Hyun-Seung) 한국산학기술학회 2005 한국산학기술학회 학술대회 Vol.- No.-
고분자OLED는 저분자OLED에 비하여 공정이 간단하고 대화면, Plastic 기판을 사용하여 All organic display로의 구현이 있다는 많은 장점을 가지고 있지만 소자의 신뢰성과 안정성에 문제를 갖고 있어 현재까지 저분자OLED에 비하여 기술 수준이 미약하다. 그러나 차세대 디스플레이의 실현을 위하여 많은 대학과 기업연구소에서 많은 연구가 진행중이다. 본 논문에서는 ITO/PEDOT:PSS/MEH-PPV/Al 구조를 갖는 고분자OLED를 제작하고 발광메커니즘에 대한 고찰과 계면특성 및 전기·광학적 특성을 조사하였다. 정공수송물질인 PEDOT:PSS은 박막의 표면상태를 부드럽게하고 ITO와 MEH-PPV 사이의 접착을 좋게하며 ITO로부터 정공을 원활하게 MEH-PPV로 전달하여 효율을 향상시킨다. 제작된 소자는 발광효율을 극대화시키기 위하여 정공수송층인 PEDOT:PSS을 첨가시킨 다층구조로서 각각의 박막을 열처리 및 MEH-PPV의 농도를 0.1, 0.3, 0.5, 0.7, 0.9, 1.5wt%로 변화시켜 농도별 표면상태와 전기·광학적 특성을 관찰하여 고효율 OLED소자 제작에 가장 적합한 MEH-PPV의 농도에 대하여 고찰하였다.
농촌지역 여성고령자의 현미덤벨체조가 체조성, 체력 및 식습관에 미치는 영향
이기철 ( Lee Gi Cheol ),정창주 ( Jeong Chang Ju ),손기수 ( Son Gi Su ),우임수 ( U Im Su ),이원경 ( Lee Won Gyeong ),공무현 ( Gong Mu Hyeon ),이수천 ( Lee Su Cheon ) 한국운동영양학회 2003 Physical Activity and Nutrition (Phys Act Nutr) Vol.7 No.2
The present study evaluated the possibility of dumbbell exercise as to improve the physical fitness and the health starus of old people in rural area. Although eighty seven volunteers of old women (over 64) living in Seonsan, Gumi city were subjected, twenty of them were attended the whole program for 6 months and the data from the twenty was analysed in this study. The results were drawn out from comparison of the body constitutuion, the physical strength, the medical aspectrs, and the questionaires of before and after this program. They showed increased physical fithess tested by grip strength (left), bar gripping reaction time, standing trunk flexibility, on foot standing test through dumbbell exercise for 6 months. Questionaire revealed the betterment of dietary pattem during this program. In the light of in these results, it is possible to conclude that dumbbell exercise had improved the basic physical condition and the health status through the increasement of physical fitness and dietary pattem change. Therefore, dumbbell exercise would be a useful program for the old people in reual area to improved their health status.
ITO/PEDOT:PSS/MEH-PPV/Al 구조의 고분자 유기발광다이오드의 특성 연구
공수철,장호정,Gong, Su-Cheol,Chang, Ho-Jung 한국마이크로전자및패키징학회 2005 마이크로전자 및 패키징학회지 Vol.12 No.3
ITO(indium tin oxide)/Glass 기판위에 정공 수송층으로 PEDOT:PSS[poly(3,4-ethylenedioxythiophene):poly(styrene sulfolnate)]과 발광층으로 MEH-PPV[poly(2-methoxy-5-(2-ethyhexoxy)-1,4phenylenvinylene)]의 고분자를 사용하여 ITO/PEDOT:PSS/MEH-PPV/Al 구조를 갖는 고분자 유기 발광다이오드 (polymer light emitting diode: PLED)를 제작하였다. 고분자 유기 발광다이오드 제작시 MEH-PPV의 농도$(0.1\;wt\%\~0.9\;wt\%)$가 발광층 표면 거칠기와 박막층판의 마찰계수(friction coefficient)에 미치는 영향을 조사하였다. MEH-PPV의 농도를 $0.1\;wt\%$에서 $0.9\;wt\%$로 증가함에 따라 발광층의 RMS 값은 1.72 nm 에서 1.00 nm로 감소하여 거칠기가 개선되는 경향을 보여 주었다. 또한 발광층 박막의 마찰계수는 0.048에서 0.035로 감소하여 박막의 접합상태가 나빠지는 현상을 나타내었다. $0.5\;wt\%$의 농도를 갖는 PLED 다이오드에서 최대 휘도인 $409\;cd/m^2$ 값을 얻었다. The polymer light emitting diodes (PLED) with ITO/PEDOT:PSS/MEH-PPV/Al structure were prepared on ITO(indium tin oxide)/Glass substrates using PEDOT:PSS[poly(3,4-ethylenedioxythiophene):poly(styrene sulfolnate)] as the hole transport material and MEH-PPV[poly(2-methoxy-5-(2-ethyhexoxy)-1,4phenylenvinylene)] as emission material layer. The dependences on the surface roughnees and friction coefficient between film layers were investigated as a function of the MEH-PPV concentrations$(0.1\;wt\%\~0.9\;wt\%)$. The RMS values decreased from 1.72 nm to 1.00 nm as the concentration of MEH-PPV increased from $0.1\;wt\%\;to\;0.9\;wt\%$, indicating improvement of surface roughness. In addition, friction coefficients decreased from 0.048 to 0.035, which means the deteriorating of the adhesion condition. The PLED sample with $0.5\;wt\%$ of MEH-PPV showed the maximum luminance of $409\;cd/m^2$.