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Geon Hui Kim,Hoyong Sung,Yeun Ryu,Jungjun Lim,Joon-Sik Kim,Hak Kyun Kim,Yeon Soo Kim 한국역학회 2021 Epidemiology and Health Vol.43 No.-
OBJECTIVES: The aim of this study was to identify the stepping cadence patterns in Korean adults by using objectively measured accelerometer data to analyze the time spent in each cadence category by sex and age. METHODS: During the 2014-2015 Korean National Health and Nutrition Examination Survey, 1,703 males and females aged 19-64 years provided at least 1 valid day of data (wearing an accelerometer ≥10 hr/d). The mean cumulative time and percentage per day in 8 cadence categories (0, 1-19, 20-29, 30-59, 60-79, 80-99, 100-119, and ≥120 steps/min) by sex and age group were calculated. RESULTS: Cumulative time and percentage per day decreased across the incremental cadence categories. Participants spent 360.08±2.56 min/d in the non-movement cadence category and 361.50±2.28 min/d in the incidental movement cadence category. However, they spent only about 18.1 min/d (2.1%) at ≥100 steps/min. Males spent significantly more time in the cadence categories of sporadic movement, purposeful steps, slow walking, and medium walking, but the other categories, except for brisk walking, had higher values in females (p<0.001). The older age group spent less time in non-movement cadence categories, and the youngest and oldest groups spent more time at a higher cadence (≥100 steps/min) than the other age groups. Similar patterns were found in a subgroup analysis by sex. CONCLUSIONS: Korean adults spent most of their time at a low cadence and only a few minutes at a high cadence (≥100 steps/min); this trend was consistent across sex and age groups.
Geon Ha Kim,Jaeho Kim,Won-Seok Choi,Yun Kyung Kim,Kun Ho Lee,Jae-Won Jang,Jae Gwan Kim,Hui Jin Ryu,Soh-Jeong Yang,Hyemin Jang,Na-Yeon Jung,Ko Woon Kim,Yong Jeong,So Young Moon,Academic Committee of th Korean Dementia Association 2024 Dementia and Neurocognitive Disorders Vol.23 No.2
The Korean Dementia Association (KDA) has been organizing biennial international academic conferences since 2019, with the International Conference of the KDA (IC-KDA) 2023 held in Busan under the theme 'Beyond Boundaries: Advancing Global Dementia Solutions.' The conference comprised 6 scientific sessions, 3 plenary lectures, and 4 luncheon symposiums, drawing 804 participants from 35 countries. Notably, a Korea-Taiwan Joint Symposium addressed insights into Alzheimer's disease (AD). Plenary lectures by renowned scholars explored topics such as microbiome-related AD pathogenesis, social cognition in neurodegenerative diseases, and genetic frontotemporal dementia (FTD). On the first day, specific presentations covered subjects like the gut-brain axis and neuroinflammation in dementia, blood-based biomarkers in AD, and updates in AD therapeutics. The second day's presentations addressed recent issues in clinical neuropsychology, FTD cohort studies, and the pathogenesis of non-AD dementia. The Academic Committee of the KDA compiles lecture summaries to provide comprehensive understanding of the advanced dementia knowledge presented at IC-KDA 2023.
Kim, Ju Ang,Yun, Hui-suk,Choi, Young-Ae,Kim, Jung-Eun,Choi, So-Young,Kwon, Tae-Geon,Kim, Young Kyung,Kwon, Tae-Yub,Bae, Myung Ae,Kim, Nak Jeong,Bae, Yong Chul,Shin, Hong-In,Park, Eui Kyun IPC Science and Technology Press 2018 Biomaterials Vol.157 No.-
<P><B>Abstract</B></P> <P>Incorporating bioactive molecules into synthetic ceramic scaffolds is challenging. In this study, to enhance bone regeneration, a magnesium phosphate (MgP) ceramic scaffold was incorporated with a novel indene compound, KR-34893. KR-34893 induced the deposition of minerals and expression of osteoblast marker genes in primary human bone marrow mesenchymal stem cells (BMSCs) and a mouse osteoblastic MC3T3-E1 cell line. Analysis of the mode of action showed that KR-34893 induced the phosphorylation of MAPK/extracellular signal-regulated kinase and extracellular signal-regulated kinase, and subsequently the expression of bone morphogenetic protein 7, accompanied by SMAD1/5/8 phosphorylation. Accordingly, KR-34893 was incorporated into an MgP scaffold prepared by 3D printing at room temperature, followed by cement reaction. KR-34893-incorporated MgP (KR-MgP) induced the expression of osteoblast differentiation marker genes <I>in vitro</I>. In a rat calvaria defect model, KR-MgP scaffolds enhanced bone regeneration and increased bone volume compared with MgP scaffolds, as assessed by micro-computed tomography and histological analyses. In conclusion, we developed a method for producing osteoinductive MgP scaffolds incorporating a bioactive organic compound, without high temperature sintering. The KR-MgP scaffolds enhanced osteoblast activation <I>in vitro</I> and bone regeneration <I>in vivo</I>.</P>
Kim Yeon Soo,Kim Geon Hui,Sung Hoyong,Kim Byung-Cheol,Ryu Jeh-Kwang,Hahn Sowon 대한스포츠의학회 2024 대한스포츠의학회지 Vol.42 No.2
Purpose: This study was performed to investigate the association between step volume and intensity with the prevalence of metabolic syndrome (MS) in Korean adults. Methods: The study analyzed 2,038 adults from the 2014 to 2017 Korea National Health and Nutrition Examination Survey, defining MS based on waist circumference, blood pressure, triglycerides, glucose, and high-density lipoprotein cholesterols. Step volume and intensity were calculated using average number of steps per day and peak 30-minute cadence, respectively. Logistic regression analysis was used to calculate the odds ratios (ORs) and 95% confidence intervals (CIs) of MS by tertiles of step volume and intensity. A joint analysis was conducted to examine the combined association between step volume and intensity with the prevalence of MS. We divided the participants into nine groups according to their step volume (tertiles) and intensity (tertiles). Results: There were 478 MS cases. Compared to the lowest tertile of volume, the ORs of MS were 1.06 (95% CI, 0.79–1.42) and 0.64 (95% CI, 0.47–0.88) in the middle and highest tertile of volume. Compared to the lowest tertile of intensity, the ORs were 1.02 (95% CI, 0.76–1.36) and 0.74 (95% CI, 0.55–1.01) in the middle and highest tertile of intensity. In the joint analysis, compared to the group with both lowest volume and intensity, the ORs were significantly lower in all groups with the highest volume, except the group with the lowest intensity. Conclusion: Although only greater step volume, not intensity, was independently related to MS, both step volume and intensity appear to be important for preventing MS.
The Optimized Partial Insulator Isolation MOSFET (PiFET)
Kim, Young Kwon,Lee, Jin Sung,Kim, Geon,Park, Taesik,Kim, Hui Jung,Cho, Young Pyo,Park, Young June,Lee, Myoung Jin The Institute of Electronics and Information Engin 2017 Journal of semiconductor technology and science Vol.17 No.5
The proposed partial insulator isolation MOSFET (PiFET) structure, shows the characteristics of improved DIBL and high threshold voltage, using the optimized buried partial insulator shape with a small dielectric constant, compared with the conventional planar MOSFET and silicon on insulator (SOI) structures, even though it has the same doping profile.
FN-tunneling-current Modeling in a Recessed-channel Structure
Kim, Young Kwon,Park, Taesik,Lee, Jin Sung,Kim, Geon,Kim, Hui Jung,Cho, Young Pyo,Park, Young June,Lee, Myoung Jin The Institute of Electronics and Information Engin 2017 Journal of semiconductor technology and science Vol.17 No.5
The FN-tunneling gate-current model for the three-dimensional recessed-channel structure including a geometrical effect is obtained. Further, the measurement results in the fabricated 60-nm DRAM chip are well fitted using our modeled simulation results in consideration of the cylindrical coordinate and the poly-depletion effect. As the recessed structure was scaled down to sub-50-nm technology with a very thin oxide thickness and a small radius, for which the reliability issues were considered, the geometrical effect seriously affected the memory-sensing margin. Our model presents a sound solution for the attainment of a fast and accurate FN-tunneling gate current to resolve the reliability issues of memory-cell transistors.