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Schottky Barrier Tunnel Field-Effect Transistor using Spacer Technique
Kim, Hyun Woo,Kim, Jong Pil,Kim, Sang Wan,Sun, Min-Chul,Kim, Garam,Kim, Jang Hyun,Park, Euyhwan,Kim, Hyungjin,Park, Byung-Gook The Institute of Electronics and Information Engin 2014 Journal of semiconductor technology and science Vol.14 No.5
In order to overcome small current drivability of a tunneling field-effect transistor (TFET), a TFET using Schottky barrier (SBTFET) is proposed. The proposed device has a metal source region unlike the conventional TFET. In addition, dopant segregation technology between the source and channel region is applied to reduce tunneling resistance. For TFET fabrication, spacer technique is adopted to enable self-aligned process because the SBTFET consists of source and drain with different types. Also the control device which has a doped source region is made to compare the electrical characteristics with those of the SBTFET. From the measured results, the SBTFET shows better on/off switching property than the control device. The observed drive current is larger than those of the previously reported TFET. Also, short-channel effects (SCEs) are investigated through the comparison of electrical characteristics between the long- and short-channel SBTFET.
Schottky Barrier Tunnel Field-Effect Transistor using Spacer Technique
Hyun Woo Kim,Jong Pil Kim,Sang Wan Kim,Min-Chul Sun,Garam Kim,Jang Hyun Kim,Euyhwan Park,Hyungjin Kim,Byung-Gook Park 대한전자공학회 2014 Journal of semiconductor technology and science Vol.14 No.5
In order to overcome small current drivability of a tunneling field-effect transistor (TFET), a TFET using Schottky barrier (SBTFET) is proposed. The proposed device has a metal source region unlike the conventional TFET. In addition, dopant segregation technology between the source and channel region is applied to reduce tunneling resistance. For TFET fabrication, spacer technique is adopted to enable self-aligned process because the SBTFET consists of source and drain with different types. Also the control device which has a doped source region is made to compare the electrical characteristics with those of the SBTFET. From the measured results, the SBTFET shows better on/off switching property than the control device. The observed drive current is larger than those of the previously reported TFET. Also, short-channel effects (SCEs) are investigated through the comparison of electrical characteristics between the long- and shortchannel SBTFET .
Interlayer-state-driven superconductivity inCaC6studied by angle-resolved photoemission spectroscopy
Kyung, Wonshik,Kim, Yeongkwan,Han, Garam,Leem, Choonshik,Kim, Chul,Koh, Yoonyoung,Kim, Beomyoung,Kim, Youngwook,Kim, Jun Sung,Kim, Keun Su,Rotenberg, Eli,Denlinger, Jonathan D.,Kim, Changyoung American Physical Society 2015 Physical review. B, Condensed matter and materials Vol.92 No.22
Garam Kim,Poshan Yugal Bhattarai,Hong Seok Choi 대한약학회 2019 Archives of Pharmacal Research Vol.42 No.2
Peptidyl-prolyl cis/trans isomerase NIMA-interacting 1 (PIN1) induces conformational and functional changes to numerous key signaling molecules following proline-directed phosphorylation and its deregulation contributes to disease, particularly cancer. PIN1 is overexpressed in breast cancer, promoting cell proliferation and transformation in collaboration with several oncogenic signaling pathways, and is correlated with a poor clinical outcome. PIN1 level is also increased in certain gynecological cancers such as cervical, ovarian, and endometrial cancers. Although women with breast cancer are at risk of developing a second primary gynecological malignancy, particularly of the endometrium and ovary, the common oncogenic signaling pathway mediated by PIN1 has not been noted to date. This review discusses the roles of PIN1 in breast tumorigenesis and gynecological cancer progression, as well as the clinical effect of targeting this enzyme in breast and gynecological cancers.