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우리 나라 병원들의 건강증진 서비스 도입 현황과 이에 영향을 미치는 요인
이상규,박춘선,강명근,함명일,이순영,조우현,Lee, Sang-Gyu,Park, Choon-Seon,Kang, Myung-Guen,Hahm, Myung-Il,Lee, Soon-Young,Cho, Woo-Hyun 대한예방의학회 2001 예방의학회지 Vol.34 No.4
Objectives : To investigate the current status of hospital-based health promotion programs in Korea and to elucidate the factors which affect to the process of implementation. Methods : We conducted a mail survey of all 875 hospitals in Korea from March to May 2001. In reference to 12 specific kinds of health promotion programs, hospital CEOs were asked whether their hospital have such programs, whether they are fully staffed and whether the program is paid for by the patients. Contextual factors(location, hospital type, number of beds, length of operation, public/private status, economic level of the community, the level of competition) and organizational factors (the extent of market, compatibility with vision, formalization), strategic types of the CEOs (defender/analyser/prospector) were also surveyed. The relationships between each variable and the implementation of health promotion services, activation of services, and the target groups(patient/community resident) were analyzed by univariate analysis and the independent effects of these variables were examined with multiple logistic regression. Results : 100 of 125 hospitals responding (84.8%) had mere than one health promotion program. However, they showed fluctuations in the adoption rate of each programs, meaning that comprehensive health promotion services were not provided. Many programs were not fully staffed and few hospitals had paid programs. In factors affecting health promotion service implementation, private hospitals showed a higher rate in implementation than public hospitals. In contrast, when the competition among nearby hospitals was intense, the level of implementation of service lowered. In the strategic type of the CEOs, the prospectors were shown to have instituted more health promotion programs in their hospitals and the analysers had a greater tendency to have programs for community residents than the defenders. Conclusion . Considering the above results, contextual factors may contribute greatly to the introduction of health promotion services in Korean hospital, although the CEO's personal preference and organizational factors play a larger role in the activation of services. Additionally, the CEO's personal preference may be the major influencing factor in the introduction of programs for community residents.
서브마이크론 CMOS DRAM의 소자 특성에 대한 BPSG Flow 열처리 영향
이상규,김정태,고철기,Lee, Sang-Gyu,Kim, Jeong-Tae,Go, Cheol-Gi 한국재료학회 1991 한국재료학회지 Vol.1 No.3
2충의 BPSG를 사용하는 서브마이크론 CMOS DRAM에 있어 전기적 특성에 관한 BPSG flow온도의 영향을 비교하였다. BPSG flow온도를 $850^{\circ}C/850^{\circ}C,\;850^{\circ}C/900^{\circ}C,\;900^{\circ}C/900^{\circ}C$의 3가지 다른 조합을 적용하여 문턱전압, 파괴전압, Isolation전압과 더불어 면저항과 접촉 저항을 조사하였다. $900^{\circ}C/900^{\circ}C$ flow의 경우 NMOS에서 문턱전압은 $0.8\mu\textrm{m}$ 미만의 채널길이에서 급격히 감소하나 PMOS 경우는 차이가 없었다. NMOS와 PMOS의 파괴전압은 각각 $0.7\mu\textrm{m}$와 $0.8\mu\textrm{m}$ 이하에서 급격히 감소하였다. 그러나 $850^{\circ}C/850^{\circ}C$ flow의 경우에는 NMOS와 PMOS모두 문턱전압과 파괴전압은 채널길이 $0.7\mu\textrm{m}$까지 감소하지 않았다. Isolation전압은 BPSG flow온도 감소에 따라 증가하였다. 면저항과 접촉 저항은 BPSG flow온도가 $900^{\circ}C$에서 $850^{\circ}C$로 감소됨에 따라 급격히 증가되었다. 이와 같은 결과는 열처리 온도에 따라 dopant의 확산과 활성화에 관련 있는 것으로 생각된다. 접촉 저항 증가에 대한 개선 방법에 대하여 고찰하였다. A comparision was made on the influence of BPSG flow temperatures on the electrical properties in submicron CMOS DRAMs containing two BPSG layers. Three different combinations of BPSG flow temperature such as $850^{\circ}C/850^{\circ}C,\;850^{\circ}C/900^{\circ}C,\;and\;900^{\circ}C/900^{\circ}C$ were employed and analyzed in terms of threshold, breakdown and isolation voltage along with sheet resistance and contact resistance. In case of $900^{\circ}C/900^{\circ}C$ flow, the threshold voltage of NMOS was decreased rapidly in channel length less than $0.8\mu\textrm{m}$ with no noticeable change in PMOS and a drastic decrease in breakdown voltages of NMOS and PMOS was observed in channel length less than and equal to $0.7\mu\textrm{m}$ and $0.8\mu\textrm{m}$, respectively. Little changes in threshold and breakdown voltages of NMOS and PMOS, however, were shown down to channel length of $0.6\mu\textrm{m}$ in case of $850^{\circ}C/850^{\circ}C$ flow. The isolation voltage was increased with decreasing BPSG flow temperature. A significant increase in the sheet resistance and contact resistance was noticeable with decreasing BPSG flow temperature from $900^{\circ}C$ to $850^{\circ}C$. All these observations were rationalized in terms of dopant diffusion and activation upon BPSG flow temperature. Some suggestions for improving contact resistance were made.