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최기용 사단법인 한국언어학회 2023 언어학 Vol.- No.97
The passive in Korean exhibits three peculiar properties in addition to the passive’s usual properties such as the demotion of the agent and the promotion of the patient; (a) three variants of passive verbal forms, (b) two different oblique forms, and (c) licensing of an accusative case marker in certain passive sentences. This article presents one generative perspective of these properties based on the assumptions made in Choi (2018). These include (a) the postulation of Vpass, Voice, and Appl, (b) the assumption that theta roles are uninterpretable features, and the optionality of Merge. If the analysis is on the right tract, it indicates that a universal characterization of the passive is suppression of the external theta role. Finally, it shows how the difference between Korean and Japanese passives can be explained.
MEMS 적용을 위한 Thermal CVD 방법에 의해 증착한 SiC막의 반응성 이온 Etching 특성 평가
최기용,최덕균,박지연,김태송 한국전기전자재료학회 2004 전기전자재료학회논문지 Vol.17 No.3
In recent years, silicon carbide has emerged as an important material for MEMS application. In order to fabricate an SiC film based MEMS structure by using chemical etching method, high operating temperature is required due to high chemical stability Therefore, dry etching using plasma is the best solution. SiC film was deposited by thermal CVD at the temperature of 100$0^{\circ}C$ and pressure of 10 torr. SiC was dry etched with a reactive ion etching (RIE) system, using SF$_{6}$/O$_2$ and CF$_4$/O$_2$ gas mixture. Etch rate has been investigated as a function of oxygen concentration in the gas mixture, rf power, working pressure and gas flow rate. Etch rate was measured by surface profiler and FE-SEM. SF$_{6}$/O$_2$ gas mixture showed higher etch rate than CF$_4$/O$_2$ gas mixture. Maximum etch rate appeared at RF Power of 450W. $O_2$ dilute mixtures resulted in an increasing of etch rate up to 40%, and the superior anisotropic cross section was observe