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실리콘 직접 접합 / 전기화학적 식각정지를 이용한 실리콘 다이아프램의 형성과 실리콘 압력센서 제조에의 응용
주병권,하병주,김근섭,송만호,김성환,김철주,차균현,오명환 ( B . K . Ju,B . J . Ha,K . S . Kim,M . H . Song,S . H . Kim,C . J . Kim,K . H . Tchah,M . H . Oh ) 한국센서학회 1994 센서학회지 Vol.3 No.3
A new type of Si diaphragm was fabricated using Si-wafer direct bonding and two-step electrochemical etch-stopping methods. Using the new diaphragm structure in mechanical sensors, more precise control of cavity depth and diaphragm thickness was achievable. Also, the propagation of the stress, which was generated near the bonding interface, to the surface can be avoided. Finally, a piezoresistive-type Si pressure sensor was fabricated utilizing the diaphragm and a digital pressure gauge, which can display units of pressure, was realized.
주병권,고창기,김철주,차균현,오명환 ( B . K . Ju,C . G . Ko,C . J . Kim,K . H . Tchah,M . H . Oh ) 한국센서학회 1994 센서학회지 Vol.3 No.1
In this study, we fabricated and characterized a calorimetric-type flow sensing element using a micromachined silicon substrate. The cooling and heating effects resulted from the gas flow were measured by two temperature sensors located at both sides of the heating resistor, and the insulator diaphragm was employed as a substrate in order to improve thermal isolation. The sensor generated 0∼378.4mV output signal under 10V bridge-applied voltage when the nitrogen gas was passed on the sensor surface having a mass flow rate of 0∼0.25grs/min, and reached to the stable operating condition within 10 seconds.
차균현,사공석진,최한규 고려대학교 공학기술연구소 1984 고려대학교 생산기술연구소 생기연논문집 Vol.19 No.1
A VCO (Voltage Controlled Oscillator) in the spectrum analyzer is to sweep frequency in order to scan spectra of input signal. The stability and accuracy of the spectrum analyzer depend on the frequency stability and accuracy of its VCO. Both stability and accuracy can be improved by phase locking. It was implemented using the method of modulo PLL with fast acquisition time and many channel to design the VCO which can be applied to spectrum analyzer. The system is simpler than previous modulo PLL because it shows the same result with variable N/2 and constant K.
실리콘 diaphragm의 일괄제조를 위한 Microscopy Study
주병권,하병주,차균현,김철주,오명환 경북대학교 센서기술연구소 1991 센서技術學術大會論文集 Vol.2 No.1
In case of deep etching to above 300μm depth, the etch-defects appeared at etched surface could be classified into three categories such as hillocks, reaction products, and white residues. Also, the difference in both the existence of etch-defects and etch rate distribution was investigated when the etched surface was downward, upward and erected vertically in etching solution. Finally, the nondestructive method for the thickness measurement of 5~20μm thick diaphragm was devised by the observation of transmitted light through diaphragm from a 50watt focused tungsten lamp.
박노경,차균현,이주석,김형곤,주병권,강용섬 대한전자공학회 1996 CAD 및 VLSI 설계연구회지 Vol.5 No.1
The proposed SRAM reusing charge operate in 3.3 voltage and we obtain 33.3% power save efficiency compared to the conventional wordline access method due to resuing the current of first actived wordline gate capacitance at second actived wordline gate capacitance. In the case of this SRAM reusing charge, described in this paper, we obtained 5ns(200MHz) operation speed result in the HYUNDAI 0.6um CMOS technology. In this paper power saving is 30.75mW compaired to the conventional wordline access for one clock.