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유리기판위에 증착한 50% Pb-excess PZT박막의 전기적특성
정규원,박영,주필연,박기엽,송준태,Jeong, Kyu-Won,Park, Young,Ju, Pil-Yeon,Park, Ki-Yup,Song, Joon-Tae 한국전기전자재료학회 2001 전기전자재료학회논문지 Vol.14 No.5
PZT thin films (3500${\AA}$) ahve been prepared onto Pt/Ti/corning glass (1737) substrates with a RF magnetron sputtering system using Pb$\sub$1.50/(Zr$\sub$0.52/,Ti$\sub$0.48)O$_3$ ceramic target. We used two-step annealing techniques, PZT thin films were grown at a 300$^{\circ}C$ substrate temperature and then subjected to an RTA treatment. In case of 500$^{\circ}C$ RTA temperature show pyrochlore phase. The formation of Perovskite phase started above 600$^{\circ}C$ and PZT thin films generated (101) preferred orientation. As the RTA time and temperature increased, crystallization of PZT films were enhanced. The PZT capacitors fabricated at 650$^{\circ}C$ for 10 minutes RTA treatment showed remanent polarization 30 ${\mu}$C/$\textrm{cm}^2$, saturation polarization 42${\mu}$C/$\textrm{cm}^2$, coercive field 110kV/cm, leakage current density 2.83x10$\^$-7/A/$\textrm{cm}^2$, remanent polarization were decreased by 30% after 10$\^$9/ cycles.
주필연,조익현,정규원,박영,임동건,이준신,송준태 성균관대학교 2002 학술회의지원논문목록집 Vol.2002 No.-
PZT thin films(35000A) have been prepared onto Pt/Ti/SiO₂/Si substrates with a RF magnetron sputtering system using Pb_(1.05)(Zr_(0.52),Ti_(0.48))O₃ceramic target. We used two-step annealing techniques. As the RTA times and temperatures were increased, crystallization of PZT thin films were enhanced. The ferroelectric characteristics of PZT capacitors fabricated at 700℃ for 60 seconds were like these, remanent polarization were 12.1 μC/㎠, coercive field were 110 kV/cm, leakage current density were 4.1×10^(7) A/㎠, εr - 442, and remanent polarization were decreased by 22% after 10^(10) cycles, respectively.
유리기판위에 증착한 PZT 박막의 전기적특성에 관한 연구
정규원,주필연,박영,이준신,송준태 성균관대학교 2002 학술회의지원논문목록집 Vol.2002 No.-
PZT thin films(4000ꐌÅ) have been prepared onto 1737 corning glass and ITO coated glass substrates with a RF magnetron sputtering system using Pb_1.05(Zr_0.52,Ti_0.48)O₃ ceramic target. Electrical properties of PZT thin film deposited on ITO coated glass were P_r= 15.8 μC/㎠, P_5= 52.2μC/㎠,E_c= 100 kV/cm, J= 3*10^-7 A/㎠. Pr was decreased by 10 % after 10^9 cycles. And in case of corning glass were Pr=8.1 μC/㎠. P_5= 26.7 μC/cm2, E_c= 95 kV/cm, J= 2*10^-6 A/㎠, P_r was decreased by 25 % after 10^9 cycles, respectively. With the RTA treatment duration and temperature increased, the crystallization of PZT thin films were enhanced, however, the leakage current density became higher. The leakage current mechanism was found to be space charge conduction by the defects and oxygen vacancies existing in PZT and PZT/bottom electrode interfaces.