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열처리 조건에 따른 SrS:Cu,F TFEL 소자의 발광특성의 변화
조황신,송상근,김훈,양해석 중앙대학교 기초과학연구소 2000 基礎科學硏究所 論文集 Vol.14 No.-
SrS:Cu,F thin film electroluminescent (TFEL) devices, with a typical double-insulating-layer structure, is fabricated by E-beam deposition method. In order to improve the luminescent characteristics, various post-deposition annealing of the TFEL devices are attempted in electric furnace at 700℃ for 30 minutes. EL emission spectra of SrS:Cu,F TFEL devices show a major peak centered around 454nm∼474nm, having longer wavelength for increased CuF₂ concentrations. The emission corresponds to the 3d^(9)4S->3d^(10) electronic transition of Cu^+ ions. The maximum brightness of 213 cd/㎡ and the best efficiency of 0.19 lm/W are achieved for SrS:Cu,F TFEL devices with the post posphor-layer-deposition annealing in air.
DCM2와 Rubrene이 첨가된 TPD/Alq_3 유기 전계발광 소자의 발광 특성
조황신,이민욱,경충현,양해석 中央大學校 基礎科學硏究所 2001 基礎科學硏究所 論文集 Vol.15 No.-
TPD/ALq_3 organic electroluminescent(EL) devices doped with DCM2 and/or rubrene are fabricateed. Luminescent characteristics of these EL devices are investigated. It is found that TPD/ALq_3:DCM2,rubrene EL devices, as compared to TPD/ALq_3:DCM2 EL devices, have lower threshold voltages and higher EL efficiencies as well as reduced intensity of emission peak due to ALq_3 in EL spectra. These improvements in EL characteristics upon rubrene codoping can be attributed to the direct formation of rubrene excitons as well as th the possible energy transfer from rubren to DCM2.
동시증착법으로 제작한 CdS:In 박막의 전기적 광학적 특성
양혜석,윤정택,조황신 中央大學校 基礎科學硏究所 1997 基礎科學硏究所 論文集 Vol.11 No.-
Indium-doped CdS thin films have been deposited on glass substrate by vaccum coevaporation of CdS and In powders. The atomic percent of In in CdS:In thin films varied from 0 to 6% as estimated from the evaporation rates of each source and electron probe micro analysis. Structual, morphological, electrical and optical properties of CdS:In thin films have been investigated by X-ray diffraction, scanning election microscopy, Hall effect and optical transmittance spectra measurements, respectively. The optimum In content in CdS/CuInSe₂ solar cells, turned out to be about 1.65%, at which the resistivity is as low as ?? Ωcm and the optical band gap is as high as 2.62 eV.
박용규,성현호,조황신,양해석,이종찬,박대희 한국전기전자재료학회 2000 전기전자재료학회논문지 Vol.13 No.10
ZnS phosphors were sintered at vacuum atmosphere, Sintered under the temperature of 950$\^{C}$, ZnS phosphors were grown into the sphalerite structure and two emission peaks were observed at the positions of 460nm and 528nm of the emission spectra. Sintered over the temperature of 1050$\^{C}$, there were simultaneously the sphalerite and wurtize structure in the ZnS phosphors and three emission peaks were observed at the positions of 440nm and 515nm of emission spectra. The emission peaks of 460nm obsrved under the sphalerite structure and 440nm observed under the wurtize structure were due to the vacancy of Zn formed in the ZnS phosphors. The emission peaks of 528nm observed under the sphalerite structure and 515nm observed under the wurtize structure wre caused by the radiative transitions from the level of the vacancy of S formed in the ZnS phosphors to the valance band.
Zno:Eu 형광체의 Eu 결합 구조에 따른 발광 특성
박용규,한정인,조황신,주성후 한국전기전자재료학회 1997 電氣電子材料學會誌 Vol.10 No.8
In this study we have synthesized Zno:Eu phosphors under various sintering atmospheres and temperatures. The analysis of X-ray diffractometer measurement indicates that for Zno:EuCl$_3$ phosphors sintered in air and vacuum 뗘 exists in the host lattice as Eu$_2$O$_3$and EuOCl respectively. From the photoluminescence for the phosphors sintered in vacuum Eu removes the broad-band emission of the ZnO host consequently isolating the red emission due to Eu$^{3+}$ ion and improves the color purity of red emission. The photoluminescence excitation and time resolving spectrum measurements suggest that energy-transfer process occurres from the self-activated defect center in ZnO host the Eu$^{3+}$ ion which exist in the host lattice in the form of EuOCl.