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이현섭,박범영,서헌덕,박기현,정해도,Lee, Hyunseop,Park, Boumyoung,Seo, Heondeok,Park, Kihyun,Jeong, Haedo 한국전기전자재료학회 2005 전기전자재료학회논문지 Vol.18 No.4
Stick-slip friction is one of the material removal mechanisms in tribology. It occurs when the static friction force is larger than the dynamic friction force, and make the friction curve fluctuated. In the friction monitoring of chemical mechanical polishing(CMP), the friction force also vibrates just as stick-slip friction. In this paper, an attempt to show the similarity between stick-slip friction and the friction of CMP was conducted. The prepared hard pa(IC1000/Suba400 stacked/sup TM/) and soft pad(Suba400/sup TM/) were tested with SiO₂ slurry. The friction force was measured by piezoelectric sensor. According to this experiment, it was shown that as the head and table velocity became faster, the stick-slip time shortened because of the change of real contact area. And, the gradient of stick-slip period as a function of head and table speed in soft pad was more precipitous than that of hard one. From these results, it seems that the fluctuating friction force in CMP is stick-slip friction caused by viscoelastic behavior of the pad and the change of real contact area.
CMP시 SiO<sub>2</sub> 슬러리의 마찰 특성과 연마결과에 관한 연구
이현섭,박범영,서헌덕,정재우,정석훈,정해도,Lee Hyunseop,Park Boumyoung,Seo Heondeok,Jung Jaewoo,Jeong Sukhoon,Jeong Haedo 대한기계학회 2005 大韓機械學會論文集A Vol.29 No.7
The effects of mechanical parameters on the characteristics of chemical mechanical polishing(CMP) can be directly evaluated by friction force. The piezoelectric quartz sensor for friction force measurement was installed, and friction force could be detected during CMP process. Furthermore, friction energy can be calculated by multiplying relative velocity by integration of the friction force throughout the polishing time. $SiO_2$ slurry for interlayer dielectric(ILD) CMP was used in this experiment to consider the relation of frictional characteristics and polishing results. From this experiment, it is proven that the friction energy is an essential factor of removal rate. Also, the friction force is related to removal amount per unit length(dH/ds) and friction energy has corelation to the removal rate(dH/dt) and process temporature. Moreover, within wafer non-unifornity(WIWNU) is related to coefficient of friction because of the mechanical moment equilibrium. Therefore, the prediction of polishing result would be possible by measuring friction force.
리튬탄탈레이트(LiTaO₃) 기판의 화학기계적 연마 기술
이현섭(Hyunseop Lee),조한철(Hanchul Cho),정해도(Haedo Jeong) 대한기계학회 2008 대한기계학회 춘추학술대회 Vol.2008 No.5
Recently, lithium tantalate (LiTaO₃, LT) has been widely used for a piezoelectric material for SAW components and optical waveguides because of its piezoelectric, electro-optical, nonlinear optical characteristics, and a wide transparency range from ultraviolet to infrared. LT wafers should be polished to be used for substrates of device and waveguides due to surface scattering. However, few researchers have been reported on the chemical mechanical polishing (CMP) of LT. In this paper, we investigated the characteristics of potassium hydroxide (KOH)-hydrogen peroxide (H₂O₂) based slurry in CMP of LT by using modification of KOH based CMP slurry.