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MOCVD를 이용한 비평면구조 기판에서의 GaN 선택적 성장특성연구
이재인,금동화,유지범,Lee, Jae-In,Geum, Dong-Hwa,Yu, Ji-Beom 한국재료학회 1999 한국재료학회지 Vol.9 No.3
MOCVD를 이용하여 $SiO_2$로 패턴된 GaN/sapphire 기판상에서 $NH_3$유량과 성장온도가 GaN 성장의 선택성과 성장 특성에 미치는 영향을 조사하였다. $NH_3$유량을 500~1300sccm, 성장온도를 $950~1060^{\circ}C$로 변화시켜 성장변수에 따른 영향을 주사전자현미경으로 관찰하였다.$NH_3$유량이 증가할수록 성장선택성이 향상되었으나 기판윈도우에서 성장되는 GaN 형상변화에는 큰 영향을 미치지 못하였다. 성장온도가 높을수록 GaN의 성장선택성이 향상됨이 관찰되었다. 패턴 모양을 원형, 선형, 방사선모양(선형 패턴을 30, $45^{\circ}$로 회전)으로 제작하여 GaN 성장을 수행한 후 관찰한 결과 {1101}으로 이루어진 Hexagonal 피라밋 형상과 마스크층 위로의 측면성장을 얻을 수 있었으며, 성장조건에 따른 <1100>와 <1210>의 방향으로의 측면성장속도의 차이를 관찰할 수 있었다. The selective area growth of GaN by metal organic chemical vapor deposition has been carried out on GaN/ sapphire substrate using $SiO_2$ mask. We investgated the effect of growth parameters such as flow rate of $NH_3$(500~1300sccm) and the growth temperature($950~1060^{\circ}C$) on the growth selectivity and characteristics of GaN using the Scanning Electron Microscopy(SEM). The selectivity of GaN improved as flow rate of NH, and growth temperature increased. But the grown GaN shapes on the substrate windows was independent of the flow rate of $NH_3$. On the pattern shapes such as circle, stripe, and radiational pattern(rotate the stripe pattern by $30^{\circ}, 45^{\circ}$), we observed the hexagonal pyramid, the lateral over growth on the mask layer, and the difference of the lateral growth rate depending on growth condition.
상변화 물질을 이용한 열전지 단열성능 향상에 관한 연구
이재인,하상현,김기열,정해원,조성백,Lee, Jaein,Ha, Sang-hyeon,Kim, Kiyoul,Cheong, Haewon,Cho, Sungbaek 한국군사과학기술학회 2016 한국군사과학기술학회지 Vol.19 No.4
Thermal batteries are primary reserve power sources, which are activated upon the melting of eutectic electrolytes by the ignition of heat sources. Therefore, sufficient thermal insulation is absolutely needed for the stable operation of thermal batteries. Currently, excessive amount of heat sources is being used to compensate the heat loss in the cell stack along with the insertion of metal plates and thermal insulators to reserve heat at the both ends of cell stack. However, there is a possibility that the excessive heat flows into the cell stack, causing a thermal runaway at the early stage of discharge. At the same time, the internal temperature of thermal batteries cannot be maintained above the battery operating temperature at the later stage of discharge because of the insufficient insulation. Therefore, the effects of Phase Changing Material(PCM) plates were demonstrated in this study, which can replace the metal and insulating plates, to improve the thermal insulation performance and safety of thermal batteries.
Maleic Anhydrides로부터 Alkoxyallylthiopyridazines 유도체의 효과적 합성
이재인,윤영숙,Lee, Jae-In,Yun, Young-Sook 대한화학회 2004 대한화학회지 Vol.48 No.6
Alkoxyallylthiopyridazine derivatives which exhibit superior effect for the treatment of hepatic diseases were synthesized from maleic anhydrides. The reaction of maleic anhydrides with hydrazine monohydrate in aq HCl at reflux afforded dihydroxypyridazines, which were transformed to dichloropyridazines with phosphorus oxychloride. The substitution of the first chlorine atom in dichloropyridazines proceeded selectively with alcoholic sodium alkoxides in THF to afford alkoxychloropyridazines, which were converted to alkoxyallylthiopyridazines with lithium 2-propene-1-thiolate in high yields. 간염치료에 탁월한 효과를 나타내는 alkoxyallylthiopyridazine 유도체들이 maleic anhydrides로부터 합성되었다. 수용성 HCl에서 maleic anhydrides를 hydrazine monohydrate로 환류하면 dihydroxypyridazines이 얻어지며, 이 화합물을 phosphorus oxychloride로 반응시키면 dichloropyridazines으로 전환되었다. Dichloropyridazines에서 첫 번째 염소원자의 치환은 THF 용매에서 알코올성 sodium alkoxides에 의하여 선택적으로 일어나 alkoxy- chloropyridazines을 생성하며, 이 화합물은 lithium 2-propene-1-thiolate에 의하여 높은 수득율로 alkoxyallyl- thiopyridazines으로 전환되었다.