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장파장 GaInAsP/Inp DH 레이저의 제작과 발진특성
이용탁,홍창희,Lee, Yong-Tak,Hong, Chang-Hui 한국전자통신연구원 1982 전자통신 Vol.4 No.1
성장된 GaInAsP/InP DH wafer로부터 상온에서 duty 5%까지 Pulse 동작이 가능한 전면전극(broad contact) 및 stripe 구조 LD(711이저 다이오드)를 제작하였다. 또 이렇게 제작된 LD의 I-V특성, 1-L 특성 및 발진파장 등을 조사하기 위해 LD 구동회로 및 Ge 태양전지와 Ge-APD를 이용한 광 검출회로를 제작하였다. 이들을 이용해 제작한 LD의 특성을 조사한 결과 stripe 구조 LD인 경우 발진개시전류($I_th$)가 900mA, 발진파장이 $1.29\mum$, 파장반치폭(FWHM)이 $60\AA$였으며 $1.33I_th$까지 kink 없이 동작이 가능하였다.
고속 광통신용 GaInAs/InP PIN 수광소자 모듈 제작
박찬용,박경현,이창원,이용탁,Park, Chan-Yong,Park, Kyung-Hyun,Lee, Chang-Won,Lee, Yong-Tak 한국전자통신연구원 1991 전자통신 Vol.13 No.4
We fabricated very high. speed PIN Photodiode module for the application of high speed optical receiver. OMVPE was used for the growth of InP layer on InGaAs absorption layer. The structure was the combination of mesa and planartype. Fabrication procedure was more complicated than simple mesa or simple planar type structure because we used semiinsulating InP substrate in order to reduce stray capacitance. The results at-5V were as follows : dark current was less than 1nA, capacitance was 0.55pF, and cutoff frequency was above 3GHz, and rise and fall time was about 100ps.
레이저 멀티 펄스 중첩과 회절광학소자를 이용한 숨쉬는 필름 고속 가공 기술
유동윤,최훈국,손익부,노영철,이용탁,김영재,김영한,강호민,노지환,Yoo, Dongyoon,Choi, Hun-Kook,Sohn, Ik-Bu,Noh, Young-Chul,Lee, Yong-Tak,Kim, Young-Jae,Kim, Young-Han,Kang, Ho-Min,Noh, Jihwan 한국레이저가공학회 2014 한국레이저가공학회지 Vol.17 No.3
In this paper, we studied a machining method using a diffractive beam splitter (DBS) and multi- pulse repeated radiation for breathable film. We fabricated micro-grooves on polypropylene (PP) films using multi-pulse radiation and one-shot radiation (radiating pulses at once) and a DBS. In the result, width and depth of the PP film using multi-pulse repeated radiation were more precisely controllable. Therefore, this method can be applicable to in manufacturing breathable film precisely at a high speed.
이형종(Hyung Jong Lee),홍창희(Tchang Hee Hong),이용탁(Yong Tak Lee) 한국해양대학교 해사산업연구소 1991 海事産業硏究所論文集 Vol.1 No.-
New type of 1.3㎛ DFB laser diode with absorptive grating layer of 1.55㎛ InGaAsP was fabricated. The threshold current was about 24 mA. This laser shows self-plusation for DC operation. At low of injection the relation between the pulsation frequency and the injection current shows behavior similar to the relaxation oscillation of ordinary laser diode. At high level of injection the pulsation frequency decreases compared to the relaxation oscillation. Period doubling, tripling and quadrupling were observed in AC modulation. In case of period doubling the wave form shows only one extremely short pulse within double period of the modulation current pulse without any accompanying subsidiary pulese and the oscillation frequency was quite stable. The pulse widths as short as 58.5ps was observed in that case. We suppose that this characteristics of the DFB laser diode with absorptive grating will be applicable to the modulation methods of time division multiplexing.
누설전류가 작은 $1.3\mum$ GaInAsP/InP 평면매립형 레이저 다이오드
이중기,조호성,박경현,박찬용,이용탁,Lee, Jung-Gi,Cho, Ho-Sung,Park, Kyung-Hyun,Park, Chan-Yong,Lee, Yong-Tak 한국전자통신연구원 1991 전자통신 Vol.13 No.4
Buried-heterostructure lasers are more difficult to fabricate than weakly index guided or gain guided lasers. However, these strongly index guided structures are most suitable for a source of lightwave transmission systems. But, for conventional etched mesa buried heterostructure lasers, the regrowth of InP blocking layer is difficult and irreproducible. So, there are inevitable leakage currents flowing outside the active region resulting poor performance. To eliminate these problems, we used a planar buried heterostructure. As a results, the average threshold current was 28mA and the differential quantum efficiency was about 20% per facet for $1.3\mum$ GaInAsP/InP PBH-LD. The initial forward leakage current was not exceeding $1\muA$ and the reverse voltage for $-10\muA$ was -3V~-5V, these are improved figure of 1mA~10mA and -1V~-3V for EMBH laser diode. The chip modulation bandwidth was more than 2.4GHz for $1.5I_th$.
GaAs와 InP에 격자정합된 GaINAsP 이중조직에서 불순물 확산에 의한 상호확산 촉진
박효훈,이경호,남은수,이용탁,Park, Hyo-Hun,Lee, Gyeong-Ho,Nam, Eun-Su,Lee, Yong-Tak 한국전자통신연구원 1989 전자통신 Vol.11 No.4
The influence of Zn, Si and Te diffusion on the interdiffusion in $GaAs-Ga_1_-xIN_xAs_1__yP_y$and InP$Ga_1__xIn_xAs_1__yP_y$ heterostructures was studied. The heterostructures were grown by liquid phase epitaxy, and the impurity diffusion into the heterostructures was carried out using metal compound or element sources. The extent of interdiffusion for both group III and V atoms was observed by depth profiling of matrix elements with secondary ion mass spectrometry and Auger electron spectroscopy. Selective enhancement of cation interdiffusion was observed by the concurrent Zn diffusion in both the GaAs based-and InP based-crystals. In contrast to the Zn diffusion, the Si diffusion in the GaAs based-crystal and the Te diffusion in the InP based-crystal enhanced both cation and anion interdiffusion to the same extent. A kick-out mechanism is proposed to explain the selective enhancement of the cation interdiffusion due to Zn, and a single vacancy mechanism is proposed for the interdiffusion due to Si and Te.