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자궁근종 환자에서 Gonadotropin Releasing Hormone(GnRH) 유사체 투여 후 자궁근종 세포 증식에 관한 연구
이병석,이보연,박기현,조동제,이국,송찬호,김호근,Lee, Byung-Seok,Lee, Bo-Yeon,Park, Ki-Hyun,Cho, Dong-Jae,Lee, Kook,Song, Chan-Ho,Kim, Ho-Keun 대한생식의학회 1992 Clinical and Experimental Reproductive Medicine Vol.19 No.2
The factors involved in the initial neoplastic transformation and subsquent growth of uterine fibroid are poorly understood. The reduction in uterine fibroid volume associated with the chronic administration of the mechanisms mediating the decrease in fibroid volume in GnRH-a treated patients are poorly defined. The purpose of this study was to determine the proliferating cell nuclear antigen(PCNA) in fibroid from-women pretreated with GnRH analogue(GnRH-a) compared with controls. Tissue was obtained from 16 premenopausal women with uterine fibroid who received GnRH-a(D-Trp6-GnRH) intramusculary every 28 days for four injections. The mean proliferating index(PI) in patients with uterine fibroids was $2.25{\pm}0.9$, and in controls was $8.82{\pm}1.8$(P<0.001). The proliferating index was not corrleated with the reduction of fibroid volume. In this clinical study, although hypoestrogenism may be the main factor that reduce the volume of fibroid, other factors are also considered to be involved in that process. And the regrowth of uterine fibroid may be affected by increased production of PCNA after stopping GnRH-a.
황체화된 인간 과립세포에서 Apoptosis 관련 유전자인 bcl-2와 TRPM-2의 발현
이병석,최은아,장경환,김진영,배상욱,박기현,조동제,이국,김재욱,송찬호,Lee, B.S.,Choi, E.A.,Chang, K.H.,Kim, J.Y.,Bae, S.W.,Park, K.H.,Cho, D.J.,Lee, K.,Kim, J.W.,Song, C.H. 대한생식의학회 1997 Clinical and Experimental Reproductive Medicine Vol.24 No.2
Apoptosis, programmed cell death, is posulated to occur in granulosa cells in ovarian follicular atresia. bcl-2 gene serves as protector from apoptosis and, thus, is associated with increased cell survival. TRPM-2 gene expression has been implicated as a trigger of apoptosis in rat prostate, uterus and mammary gland. Our objective was to determine if bcl-2 and TRPM-2 are expressed in luteinized human GC and, therefore, have regulatory functions for apoptosis in GC. Human GC were obtained via oocyte retrival from the infertile patients stimulated with exogeneous gonadotropins while undergoing IVF. GC were isolated from follicular fluid using Percoll gradient centrifugation. The GC were further purified with anti-CD45 magnetic beads to remove contaminating WBC's. RT-PCR were performed to analyze the mRNA expression of bcl-2 and TRPM-2 in the GC. The PCR primers were designed to amplify a 195 bp fragment of bcl-2 and a 174 bp fragment of TRPM-2. The PCR products were electrophoresed on 4% agarose gel. Three separate experiments indicated that both bcl-2 and TRPM-2 are concurrently expressed in human GC. We cultured granulosa cells with FSH (1 ng/ml) for 1 day to investigate the relative changes of TRPM-2 mRNA level with RNAse protection assay. When we cultured GC with serum free medium for 1 day TRPM-2 mRNA level increased with 1.3 fold, however it was decreased 0.64 fold with FSH. Therefore we conclude that bcl-2 and TRPM-2 are concurrently expressed and that the interaction of their products may be involved in GC apoptosis. And TRPM-2 may be regulated with FSH.
파워 클램프용 높은 홀딩전압을 갖는 사이리스터 기반 새로운 구조의 ESD 보호회로
이병석,김종민,변중혁,박원석,구용서,Lee, Byung-Seok,Kim, Jong-Min,Byeon, Joong-Hyeok,Park, Won-Suk,Koo, Yong-Seo 한국전기전자학회 2013 전기전자학회논문지 Vol.17 No.2
본 논문에서는 파워클램프용 높은 홀딩 전압을 갖는 사이리스터(SCR: Silicon Controlled Rectifier)구조에 기반한 새로운 구조의 ESD 보호회로를 제안하였다. 제안된 보호회로는 기존의 SCR 구조의 p-well과 n-well에 floating p+, n+를 삽입하여 홀딩 전압을 증가 시켰다. 제안된 보호회로는 높은 홀딩전압 특성으로 높은 래치업 면역성을 갖는다. 본 연구에서 제안된 보호회로의 전기적 특성 및 ESD 감내특성을 확인하기 위해 Synopsys사의 TCAD Tool을 이용하여 시뮬레이션을 수행하였다. 시뮬레이션 결과 제안된 보호회로는 기존 SCR 기반 ESD 보호회로보다 약 4.98 V의 높은 홀딩전압과 추가적인 floating 영역의 사이즈 변화로 최대 13.26 V의 홀딩전압을 갖는 것을 확인하였다. 또한 기존 SCR 기반 보호회로와 동일한 수준의 감내특성을 갖는 것으로 확인되었다. In this paper, we proposed the novel SCR-based ESD protection circuit with high holding voltage for power clamp. In order to increase the holding voltage, the floating p+ and n+ to n-well and p-well, respectively, in the conventional SCR. The resulting increase of the holding voltage of the our proposed ESD circuit enables the high latch-up immunity. The electrical characteristics including ESD robustness of the proposed ESD circuit have been simulated using Synopsys TCAD simulator. According to the simulation result, the proposed device has higher holding voltage of 4.98 V than that of the conventional SCR protection circuit. Moreover, it is confirmed that the device could have the holding voltage of maximum 13.26 V with the size variation of floated diffusion area.