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이온 조사된 Cu / Ni / Cu(001) / Si 자성박막에 있어서 X-ray reflectivity를 이용한 계면 연구
김태곤(T. G. Kim),송종한(J. H. Song),이택휘(T. H. Lee),채근화(K. H. Chae),황현미(H. M. Hwang),전기영(G. Y. Jeon),이재용(J. Lee),정광호(K. Jeong),황정남(C. N. Whang),이준식(J. S. Lee),이기봉(K. B. Lee) 한국자기학회 2002 韓國磁氣學會誌 Vol.12 No.5
The Cu/Ni/Cu(002)/Si(100) films which have perpendicular magnetic anisotropy were deposited by e-beam evaporation methods. From the reflection high energy electron diffraction pattern, the films were confirmed to be grown epitaxially on silicon. After 2×10^(16) ions/㎠ C+ irradiation, magnetic easy-axis was changed from surface normal to in-plane as shown in the hysteresis loop of magneto-optical Kerr effects. It became manifest from analysis of X-ray reflectivity and grazing incident X-ray diffraction that even though interface between top Cu layer and Ni layer became rougher, the contrast of Cu and Ni's electron density became manifest after ion irradiation. In addition, the strain after deposition of the films was relaxed after ion irradiation. Strain relaxation related with change of magnetic properties and mechanism of intermixed layer's formation was explained by thermo-chemical driving force due to elastic and inelastic collision of ions.