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허명수(M. S. Huh),최승우(S. W. Choi),천희곤(H. G. Chun),권식철(S. C. Kwon),이건환(G. H. Lee),조동율(T. Y. Cho) 한국진공학회(ASCT) 1997 Applied Science and Convergence Technology Vol.6 No.1
DC Magnetron Sputtering 방법으로 원기둥형 Alumina기판 (직경 4 ㎜, 길이 11 ㎜) 상에 부(-)의 TCR특성의 TaN_(0.1)(부도체)와 정(+)의 TCR특성의 Cr(금속) 박막두께를 적절히 조절하므로써 초정밀 저항기를 제조하였다. 그리고 면저항 (Rs)을 1㏀/수준으로 높이고 보호막을 형성키 위하여 상부에 Ta₂O_5 막을 입혀 Ta₂O_5/TaN_(0.1)/Cr/Al₂O₃(substrate)의 다층 박막저항체를 제조하였다. 적절한 조건(기판온도, N₂(g), Ar(g)의 유속 등)으로 상기 다층박막내 각 막의 두께를 약 10,100과 500 ㎚ 두께로 증착했을 때, Rs? 1㏀/□와 TCR?20±5 ppm/C의 초정밀 저항체가 제조되었다. Super precision resistor was manufactured by controlling properly the thickness of TaN_(0.1)(negative TCR) and Cr(positive TCR) deposited on cylindrical alumina substrate (diameter: 4 ㎜, length: 11 ㎜). Multilayer thin film resistor of Ta₂O_5/TaN_(0.1)/Cr/Alumina (substrate) was manufactured by depositing of Ta₂O_5, film on TaN_(0.1) film to increase Rs to the level of 1 ㏀/□ and to passivate the film. Super precision resistor with TCR of 20±5 ppm/C and Rs of 1 ㏀/□ was manufactured by depositing thin layers of about 10 ㎚ Ta₂O_5 100 ㎚ TaN_(0.1) and 50 ㎚ Cr film under the properly controlled sputtering condition.
송기덕,남옥현,이인우,이건환,김문일 ( K . D . Song,O . H . Nam,I . W . Lee,G . H . Lee,M . I . Kim ) 한국열처리공학회 1993 熱處理工學會誌 Vol.6 No.2
The presence of a residual stress in a thin film affects the properties and performances of the film, so the study of stress in a film must be very important. In this study, therefore, considering the characteristics of PECVD process, it was discussed that the residual stress, measured by sin²Ψ method, of TiN films deposited on substrates with different TECs (thermal expansion coefficients) changed with film thickness. As a results, it was obtained that the residual stress of TiN film was compressive stress about all kinds of substrates and increased with film thickness. Also, the compressive residual stresses of TiN films increased in Si, Ti, STS304 order. According to the above results, we confirmed that the changes of residual stress of TiN film with substrates were due to the thermal stress originated form the difference in the TECs of the film and substrates, and that the intrinsic stress had dominating effect on the residual stress of TiN film deposited by PECVD. And in this study, the intrinsic stress of TiN film was compressive stress in spite of the Zone 1 structure. It is due to the entrapment of impurities in grain boundary or void.
TaNx / Cr, Cermet 적층 박막의 비저항 및 저항온도계수에 관한 연구
허명수(M. S. Huh),천희곤(H. G. Chun),이건환(G. H. Lee),권식철(S. C. Kwon),조동율(T. Y. Cho) 한국진공학회(ASCT) 1994 Applied Science and Convergence Technology Vol.3 No.2
본 연구에서는 DC magnetron 스퍼터링법을 이용하여 고정밀, 고저항 저항체 박막으로 TaN_x film을 제조하였을 때 형성될 수 있는 화합물 중 TaN_(0.1), TaN_(0.8)과 TaN 박막의 Rs와 TCR 특성을 평가하고, film층의 우선방향성을 XRD를 이용하여 판명한 뒤 저항체의 Rs와 TCR에 미치는 영향을 조사하였다. TaN_(0.1) 박막이 35Ω/□의 면저항값과 안정된 TCR값을 나타내는 것을 알 수 있었다. 두께 50~200 ㎚의 TaN_(0.1)과 Alumina 기판 사이에 정(+)의 TCR을 갖는 약 50 ㎚의 Cr층을 증착하였을 때 Rs는 180Ω/□과 TCR은 20 ppm/℃인 적층박막을 제조할 수 있었다. TaN_(0.1), TaN_(0.8)과 TaN 시편에서 화합물 형성에 따른 Ta의 결합에너지를 ESCA를 이용하여 조사하였다. 이상의 연구결과로부터 TaN_(0.1) film이 TaN film 보다 고정밀, 고저항 박막 저항체 제조에 있어 우수한 전기저항 특성을 가지며, Cr중간층 형성으로 TCR이 ±20 ppm/℃ 정도로 안정된 고정밀 다층 저항체 박막을 형성할 수 있었다. Tantalum nitride film was deposited by reactive sputtering using argon gas mixed with controlled amount of nitrogen gas. The amount of mixed nitrogen gas as well as other sputtering parameters were controlled to make a highly stable tantalum nitride film. In the deposition of TaN_(0.1) by reactive sputtering there exits the so-called plateau region of deposition which is flat section of the resistivity and TCR curves for the change of nitrogen content in film. In this region the resistor is extremely stable and the film resistance ranges from 200 Ω/□ with TCR ranging from ±20 ppm/℃. In this region the film sheet resistance range from 40 to 60 Ω/□ with TCR ranging from -100. to -20 ppm/℃. The film resistivity of TaN_(0.1)/Cr ranges from 180 Ω/□ to 320 Ω/□ and its TCR is about ±20 ppm/℃.