http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
오태수,서은경,이용석,정현,김잔디,서태훈 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.4
InxAl1-xN ternary lms were grown on GaN/sapphire (0001) templates by using metalorganic chemical vapor deposition (MOCVD) with a In molar fraction in the range of 0.08 ≤ x ≤ 0.22. in Al-rich region. The In molar fraction x was controlled by using the MOCVD growth temperature and pressure. The optical bandgap energies and In molar fractions of InxAl1-xN ternary films were estimated by using high resolution X-ray diffraction and optical reflectance measurements. Our experimental results showed that the InxAl1-xN bandgap energies depended on In molar fraction with a large bowing parameter of 5.3 0.3 eV and that this value was larger than those predicted by using theoretical first-principles calculations. The spatial emission distribution of the InxAl1-xN ternary film was also investigated using cathodo-luminescence measurement at room temperature and showed an emission fluctuation that was possibly due to In segregation.
오태수,임기영,Kang Jea Lee,정문석,Ok Hwan Cha 한국물리학회 2006 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.49 No.III
This is a report on selective area growth (SAG) and properties of a truncated-pyramidal (TP) InGaN/GaN multi-quantum-well (MQW) structure on Si(111) substrate by metalorganic chemical vapor deposition (MOCVD). The structural and optical properties of the TP InGaN/GaN MQW structure, which depend on various filling ratios (FR), were investigated by using a scanning electron microscope (SEM), photoluminescence (PL), cathode luminescence (CL), and a near-field scanning optical microscope (NSOM). We found that both the lateral and vertical growth rates of the TP structure increased on decreasing the FR. However, the vertical growth rate decreased rapidly when poly-GaN was formed on the mask region. PL spectra exhibited two dominant peaks centered at around 425 nm and around 445 nm. The two peaks were slightly shifted towards shorter wavelengths on increasing the FR. CL and NSOM measurements confirmed that the two peaks in the PL were emissions from six side {11 . 01} facets and a top (0001) plane, respectively. These results show that the growth rate on the top (0001) plane is faster than that on the six side {11 . 01} facets.;
향상점수제를 적용한 체육 수행평가 방법이 학업성취에 미치는 효과
오태수,정구인 한국교원대학교 학교체육연구소 2012 학교체육연구소지 Vol.19 No.1
Improve motivation for physical education classes physical education as a way to encourage active participation in class, cause to apply a improve Scoring system to determine on the academic achievement, seeing that purpose. To this end, the third year of
이득과 잡음 지수의 동적 제어가 가능한 광대역 저 잡음 증폭기
오태수(Tae-Soo Oh),김성균(Seong-Kyun Kim),황과지(Guochi Huang),김병성(Byung-Sung Kim) 한국전자파학회 2009 한국전자파학회논문지 Vol.20 No.9
본 논문에서는 전류 블리딩(bleeding)과 입력 인덕티브 직렬-피킹을 이용한 공통 드레인 귀환(Common Drain Feedback: CDFB) CMOS 광대역 저잡음 증폭기(Low Noise Amplifier: LNA)를 설계하였다. 캐스코드 증폭기와 귀환 증폭기를 DC 결합하여 블리딩 전류의 조정을 통해 LNA의 이득과 잡음 지수(Noise Figure: NF)의 동적 제어를 실현하였다. 제작한 LNA는 2.5 ㎓의 대역폭에서, 고이득 영역은 1.7~2.8 ㏈ NF와 17.5 ㏈ 이득, 그리고 27 ㎽의 전력 소비를 보이고, 저 이득 영역은 2.7~4.0 ㏈ NF와 14 ㏈ 이득, 그리고 1.8 ㎽의 전력 소비를 보인다. A common drain feedback CMOS wideband LNA with current bleeding and input inductive series-peaking techniques is presented in this paper. DC coupling is adopted between cascode and feedback amplifiers, so that the gain and NF of the LNA can be dynamically controlled by adjusting the bleeding current. The fabricated LNA shows the bandwidth of 2.5 ㎓. The high gain mode shows 17.5 ㏈ gain with 1.7~2.8 ㏈ NF and consumes 27 ㎽ power and the low gain mode has 14 ㏈ gain with 2.7~4.0 ㏈ NF and dissipates 1.8 ㎽ from 1.8 V supply.
조남기,오태수,조은일 제주대학교 환경연구소 2000 환경연구논문집 : 제주대 Vol.8 No.-
In order to determine the influence of nitrogen fertilizer on agronomic characters, and forage and quality, Danjimu, Sannariyeolmu and Seouldaehyungmu were cultured on the volcanic ash soil at the Experimental Farm of Cheju University under seven nitrogen rates (0, 50, 100,150, 200, 250, 300 ㎏/㏊) from April 17 to June 20, 1999. Days to flowering was delayed from 47 to 54 days after seeding a s the nitrogen rate increased. Days to flowering of Seouldaehyungmu was very fast(44days) while Danjimu was slow(54days). The plant height increased by increasing of nitrogen rate, the longest was observed at 250 kg/ha treatment (92.7cm) and 300 kg/ha treatment(93cm), but there was no significance. Plant height of Seouldaegyungmu was the tallest(91.5cm) of all, while that of Danjimu was the shortest(79.8cm ). Total fresh yield was very high at 250kg/ha treatment(94.2MT) and at 300kg/ha treatrnent(96.2MT). but there was no significance, on the other hand, was the shortest in the case of non-treatment(46.MT).