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김진섭,김유미,정광석,윤호진,양성동,김성현,안진운,고영욱,이가원 한국전기전자재료학회 2014 Transactions on Electrical and Electronic Material Vol.15 No.6
In this paper, we investigate visible light stress instability in radio frequency (RF) sputtered a-IGZO thin filmtransistors (TFTs). The oxygen flow rate differs during deposition to control the concentration of oxygenvacancies, which is confirmed via RT PL. A negative shift is observed in the threshold voltage (VTH) underillumination with/without the gate bias, and the amount of shift in VTH is proportional to the concentrationof oxygen vacancies. This can be explained to be consistent with the ionization oxygen vacancy model wherethe instability in VTH under illumination is caused by the increase in the channel conductivity by electrons thatare photo-generated from oxygen vacancies, and it is maintained after the illumination is removed due to thenegative-U center properties.