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김영섭(Y. S. Kim),김태훈(T. H. Kim),박소희(S. H. Park),최영희(Y. H. Choi),최은서(E. S. Choi),신용진(Y. T. Shin) 한국레이저가공학회 2007 한국레이저가공학회지 Vol.10 No.1
We propose a novel application of laser engraving to patterning of light guide panel (LGP) for backlight. The feasibility of three-dimensional engraved pattern in the LGP was verified by measuring brightness and uniformity. To improve the overall uniformity, we have modified proposed patterns and found improved design for patterns. The tailoring of pattern by using laser engraving method could endow the controllability of uniformity. The proposed LGPs are more efficient in both average brightness and uniformity of illumination than the conventional LGPs which have surface pattern on the panel.
유상하,홍광준,이상렬,신용진,이관교,서상석,김승욱,정준우,신영진,정태수,신현길,김택성,문종대,You S.H.,Hong K.J.,Lee S.Y.,Shin Y.J.,Lee K.K.,Suh S.S.,Kim S.U.,Jeong J.W.,Shin Y.J.,Jeong T.S.,Shin B.K.,Kim T.S.,Moon J.D. 한국결정학회 1997 韓國結晶學會誌 Vol.8 No.1
[ $CuInTe_2$ ] 다결정은 수평전기로에서 합성하고, $CuInTe_2$ 단결정은 수직 Bridgman 방법으로 성장시켰다. $CuInTe_2$ 단결정의 c축에 수직 및 평행한 시료의 광전도도와 광발광특성을 293K에서 20 K의 온도영역에서 측정하였다. 측정된 광전류 봉우리로부터 구한 c축에 수직 및 평행한 시료의 에너지 띠 간격은 상온에서 각각 0.948 eV와 0.952 eV였다. 광전류 봉우리와 광발광 봉우리의 에너지차는 포논에너지이며 상온에서 c축에 수직 및 평행한 시료의 에너지차는 각각 22.12 meV와 21.4 meV였다. 또한 광전류 스펙트럼으로부터 시료의 spin-orbit 상호작용과 결정장 상호작용에 의한 가전자대의 갈라짐 ${\Delta}cr$과 ${\Delta}so$는 각각 0.046, 0.014 eV였다. [ $CuInTe_2$ ] synthesised in a horizontal electric furnace was found to be polycrystalline. Single crystals of $CuInTe_2$ were grown with the vertical Bridgman technique. The photoconductivity and photoluminescence of the crystals were measured in the temperature range 20 to 293 K. From the photocurrent peaks measured for the samples both perpendicular and parallel to c-axis, the energy band gaps of the samples were found to be 0.948 eV and 0.952 eV at room temperature respectively. The energy difference of the photocurrent and photoluminescence peaks of the samples both perpendicular and parallel to the c-axis measured at room temperature was a phonon energy, and its values were 22.12 meV and 21.4 meV respectively. The splitting of the valence band due to spin-orbit and crystal field interaction was calculated from the photocurrent spectra of the samples, The ${\Delta}cr\;and\;{\Delta}so$ are 0.046,0.014 eV respectively.
$Cd_{1-x}Zn_{x}S$ 박막의 성장과 광전도 특성
이상열,홍광준,유상하,신용진,이관교,서상석,김혜숙,윤은희,김승욱,박향숙,신영진,정태수,신현길,김태성,문종대,이충일,전승룡,Lee, S.Y.,Hong, K.J.,You, S.H.,Shin, Y.J.,Lee, K.K.,Suh, S.S.,Kim, H.S.,Yun, E.H.,Kim, S.U.,Park, H.S.,Shin, Y.J.,Jeong, T.S.,Shin, 한국센서학회 1995 센서학회지 Vol.4 No.3
Chemical bath deposition(C.B.D.)방법으로 다결정 $Cd_{1-x}Zn_{x}S$ 박막을 스라이드 유리(coming-2948) 기판위에 성장시켜 열처리하고 X-선 회절무늬를 측정하여 결정구조를 밝혔다. $550^{\circ}C$로 $N_{2}$ 속에서 열처리한 시료의 X-선 회절무늬로부터 외삽법으로 구한 격자상수는 CdS인 경우 $a_{0}\;=\;4.1364{\AA}$, $c_{0}\;=\;6.7129{\AA}$였으며 ZnS인 경우는 $a_{0}\;=\;3.8062{\AA}$, $c_{0}\;=\;6.2681{\AA}$였다. Van der Pauw 방법으로 Hall 효과를 측정하여 운반자 농도와 이동도의 온도 의존성을 연구하였다. 광전도 셀의 특성으로 스펙트럼응답 감도, 최대허용소비전력 및 응답시간을 측정하였다. Polycrystalline $Cd_{1-x}Zn_{x}S$ thin film were grown on slide glass(corning-2948) substrate using a chemical bath deposition (C.B.D) method. They were annealed at various temperature and X -ray diffraction patterns were measured by X-ray diffractometor in order to study $Cd_{1-x}Zn_{x}S$ polycrystal structure using extrapolation method of X-ray diffraction patterns for the CdS, ZnS sample annealed in $N_{2}$ gas at $550^{\circ}C$. It was found hexagonal structure which had the lattice constant $a_{0}\;=\;4.1364{\AA}$, $c_{0}\;=\;6.7129{\AA}$ in CdS and $a_{0}\;=\;3.8062{\AA}$, $c_{0}\;=\;6.2681{\AA}$ in ZnS, respectively. Hall effect on these sample was measured by Van der Pauw method and then studied on carrier density and mobility depending on temperature. We measured also spectral response, sensitivity maximum allowable power dissipation and response time on these sample.
HWE 방법에 의한 CdSe 박막 성장과 광전기적 특성
홍광준,이관교,이상열,유상하,신용진,서상석,정준우,정경아,신영진,정태수,김택성,문종대,김혜숙 ( K . J . Hong,K . K . Lee,S . Y . Lee,S . H . You,Y . J . Shin,S . S . Suh,J . W . Jeong,K . A . Jeong,Y . J . Shin,T . S . Jeong,T . S . Kim,J . D 한국센서학회 1997 센서학회지 Vol.6 No.4
The CdSe thin films were grown on the Si(100) wafers by a hot wall epitaxy method (HWE). The source and substrate temperature are 600? and 430 respectively. The crystalline structure of epilayers was investigated by double crystal X-ray diffraction(DCXD). Hall effect on the sample was measured by the van der Pauw method and studied on the carrier density and mobility dependence on temperature. From Hall data, the mobility was increased in the temperature range 30K to 150K by impurity scattering and decreased in the temperature range 150K to 293K by the lattice scattering. In order to explore the applicability as a photoconductive cell, we measured the sensitivity(γ), the ratio of photocurrent to darkcurrent(pc/dc), maximum allowable power dissipation(MAPD), spectral response and response time. The results indicated that the photoconductive characteristic were the best for the samples annealed in Cu vapor compare with in Cd, Se, air and vacuum vapour. Then we obtained the sensitivity of 0.99, the value of pc/dc of 1.39 X 10^7, the MAPD of 335mW, and the rise and decay time of l0ms and 9.5ms, respectively