http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
반도체 광증폭기를 이용한 다기능 전광 논리 소자의 설계 및 측정
손창완,윤태훈,김상헌,전영민,변영태,이석,우덕하,김선호,Son, Chang-Wan,Yoon, Tae-Hoon,Kim, Sang-Hun,Jhon, Young-Min,Byun, Yung-Tae,Lee, Seok,Woo, Deok-Ha,Kim, Sun-Ho 한국광학회 2006 한국광학회지 Vol.17 No.6
반도체 광증폭기에 기반을 둔 이득포화특성을 이용하여 XOR, AND, OR 논리 게이트를 동시에 구현하는 다기능 전광 논리소자를 설계하고 구현하였다. 상용화된 프로그램인 VPI Component $Maker^{TM}$을 사용하여 시뮬레이션을 수행하였고 10 Gbit/s의 입력 신호를 사용하여 XOR, AND, OR 논리동작을 동시에 구현하는 다기능 전광 논리소자를 구현하였다. Using the cross-gain modulation (XGM) characteristics of semiconductor optical amplifiers (SOAs), multi-functional all-optical logic gates, including XOR, AND, and OR gates are successfully simulated and demonstrated at 10Gbit/s. A VPI component maker^TM simulation tool is used for the simulation of multi-functional all-optical logic gates and the10 Cbit/s input signal is made by a mode-locked fiber ring laser. A multi-quantum well (MQW) SOA is used for the simulation and demonstration of the all-optical logic system. Our suggested system is composed of three MQW SOAs, SOA-1 and SOA-2 for XOR logic operation and SOA-2 and SOA-3 for AND logic operation. By the addition of two output signals XOR and AND, all-optical OR logic can be obtained.
선택영역성장 기술을 이용한 전광 논리소자용 광소자의 제작 및 측정
손창완,윤태훈,이석,Son, Chang-Wan,Yoon, Tae-Hoon,Lee, Seok,Nakano, Yoshiaki 한국광학회 2007 한국광학회지 Vol.18 No.1
Using the Selective Area Growth (SAG) technology of Metal Organic Chemical Vapor Deposition (MOCVD), we successfully integrated an active device and passive devices on the same substrate. In other words, we integrated a Semiconductor Optical Amplifier (SOA) as an active device and an S-bend waveguide and a Multi Mode Interference (MMI) waveguide as passive devices. The SOA is successfully integrated with passive devices on the same substrate. The Cross-Gain Modulation (XGM) characteristic of the integrated SOA and the loss of an MMI and an S-bend waveguide were measured. Measured XGM characteristics of the SOA showed an extinction ratio of 8.82 dB. The total loss of the MMI and S-bend waveguide was 18 dB. 본 연구에서는 광통신 시스템에 있어서 필수적인 기능으로 전망되고 있는 전광 논리소자를 구현하기 위한 집적된 광소자를 제작, 측정 하였다. 유기금속화학증착법(MOCVD)을 이용한 선택영역 성장기술을 이용하여 서로 다른 두 활성영역을 한 기판위에 성장함으로써 능동 반도체 광소자인 반도체 광증폭기와 수동 반도체 광소자인 다중모드 간섭 도파로, S-자 도파로를 집적하였다. 집적된 수동 소자부분의 손실을 측정하고 전광 논리소자를 구현하는 방법 중 하나인 반도체 광증폭기의 cross-gain modulation(XGM)특성을 측정하여 집적된 전광 논리소자로의 사용 가능성을 알아보았다.
손창완(Chang-wan Son),서석현(Suk-hyun Seo),김진호(Jin-ho Kim),황성호(Sung Ho Hwang),권기호(Key Ho Kwon),전재욱(Jae Wook Jeon) 한국자동차공학회 2009 한국자동차공학회 부문종합 학술대회 Vol.2009 No.4
This paper deals with an embedded system that are based on Electronic Control Unit(ECU) course for an automotive engineer. The embedded system that uses the Freescale HCS12 microcontroller that is currently used for body control ECU. It is made for practical training and includes various peripherals, such as LED, sensor, motor, communication port. The students of this course can learn the various functions of HCS12 and the way of using the peripherals. Moreover, this course deals with the in-vehicle networks which are Controller Area Network (CAN), Local Interconnect Network (LIN). Therefore the students can apply the experience of practical training to real application that used ECUs and in-vehicle network. This paper described a schedule of the course and the contents of practice. As the survey of students’ opinion, we propose more advanced embedded system course for automotive engineers than this course in order to help the automotive engineer to make the based knowledge for applying to real automotive application.
호도약침액의 Nitric Oxide (NO)에 대한 소거효과
손창완 ( Chang Wan Son ),이경민 ( Kyung Min Lee ),이봉효 ( Bong Hyo Lee ),임성철 ( Seong Chul Lim ),정태영 ( Tae Young Jung ),서정철 ( Jung Chul Seo ) 대한경락경혈학회 2007 Korean Journal of Acupuncture Vol.24 No.1
Objectives: Free radical metabolism seems to occupy a remarkably common position in the mechanisms of aging and aging related disease. This study was designed to find out whether Juglandis Semen herbal acupuncture solution (JSHAS) can scavenge Nitric Oxide (NO) or not. Methods: SNAP was used as NO generator. NO concentration was estimated after 2, 6, 12 and 24 hrs in no treatment group, after treatment with Vitamin C or 1, 10, 100㎍/㎖of JSHAS. Results: There was no significant scavenging effect of JSHAS on NO after 2, 6 hrs but significant effect on NO in 10, 100㎍/㎖group after 12hrs. After 24 hrs, there was a significant scavenging effect of JSHAS on NO in 1, 10, 100㎍/㎖group. Conclusions: These results suggest that JSHAS has scavenging effect on NO. This study shows that JSHAS can be used for aging related disease and further studies are required to investigate the antioxidative effects of it.
손창완(Chang Wan Son),장성필(Seongphil Chang),이상규(Sanggyu Lee),임재현(Jaehyeon Leem),송용원(Yong-Won Song),이상렬(Sang Yeol Lee) 대한전기학회 2007 대한전기학회 학술대회 논문집 Vol.2007 No.11
In order to form a p-type ZnO thin film, ZnO thin film is eposited by pulsed laser deposition(PLD) on GaAs substrate followed by nermal treatment that ensures the diffusion of As atoms from the GaAs ubstrate to the ZnO thin films. Photoluminescence (PL) measurement eveals that the improved quality of ZnO thin films is acquired at the rowth temperature of 400 ℃. It is ZnO film grown at 100 ℃ that shows the change from n-type to p-type by the thermal treatment. Measured arrier concentration in the film is changed from -5.70 × 10¹³ to 9.09 × 10¹?.
ZnO 기반의 투명 박막 트랜지스터 제작을 위한 Active-layer의 최적화에 대한 연구
장성필(Seongpil Chang),이상규(Sanggyu Lee),손창완(Chang Wan Son),임재현(Jaehyeon Leem),송용원(Yong-Won Song),주병권(Byung-Kwon Ju),이상렬(Sang Yeol Lee) 대한전기학회 2007 대한전기학회 학술대회 논문집 Vol.2007 No.11
We have observed electrical properties of ZnO thin films for the fabrication of transparent thin film transistor. ZnO thin films were deposited on Al₂O₃(0001) substrate at various temperatures by pulsed laser deposition(PLD). The third of harmonic(355㎚) Nd:YAG laser was used for pulsed laser deposition. X-ray diffraction(XRD), field emission-scanning electron microscope(FE-SEM), and photoluminescence were used to characterize physical and optical properties of ZnO thin film. The results indicated the ZnO film showed good optical properties as increasing temperatures, with low FWHM of exciton-related peak and XRD(0002) peak.
옥성해,문연태,최영완,손창완,이석,우덕하,변영태,전영민,김선호,이종창,오재응,Ok, Seong-Hae,Moon, Yon-Tae,Choi, Young-Wan,Son, Chang-Wan,Lee, Seok,Woo, Deok-Ha,Byun, Young-Tae,Jhon, Young-Min,Kim, Sun-Ho,Yi, Jong-Chang,Oh, Jae-Eung 한국광학회 2006 한국광학회지 Vol.17 No.3
본 연구에서는 광통신 시스템에서의 고속변조를 위하여 사용되는 전계광학 변조기를 구현하기 위하여 InAs 양자점(Quantum Dots)을 변조영역으로 하는 전계광학 변조기를 설계, 제작하였다. 제작한 양자점 전계광학 변조기에서 1550 nm의 파장을 가지는 입력광의 변조 특성을 측정하여 벌크(Bulk)형태의 변조영역을 가지는 동일한 구조의 전계광학 변조기와 비교하였다. 위상변조효율은 TE 모드에서 $333.3^{\circ}/V{\cdot}mm$, TM 모드에서 $300^{\circ}/V{\cdot}mm$ 로 측정되었으며, 기존의 벌크로 변조영역이 구성된 전계광학 변조기와 동일한 소자구조를 가지는 전계광학 변조기에 비해 편광의존도가 낮으며 위상변조효율이 20배 이상 향상된 결과를 얻었으며, 양자우물구조에 비하여는 3배 이상의 높은 위상변조효율을 얻었다. We have fabricated and measured electrooptic modulator using coupled stack InAs/InGaAs quantum dots. The height of the quantum dot is 16 nm and quantum dots are stacked including an InGaAs capping layer. The peak wavelength of photoluminescence is 1260 nm at room temperature and 1158 nm at 12 K. The operation characteristics of the quantum dots show high modulation efficiency of electrooptic modulator at 1550 nm compared to that of existing III-V bulk and MQW type semiconductor. The measured switching voltage ($V\pi$) is 540 and 600 mV, for TE mode and TM mode, respectively. From the results, the modulation efficiency can be determined as 333.3 and $300^{\circ}/V{\cdot}mm$ for TE and TM modes. The results reported here may lead to the design and fabrication of a novel electrooptic modulator with low switching voltage and high efficiency.