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ZrO<sub>2</sub>와 SiO<sub>2</sub> 절연막에 따른 Ru-Zr 금속 게이트 전극의 특성 비교
서현상,이정민,손기민,홍신남,이인규,송용승,Seo, Hyun-Sang,Lee, Jeong-Min,Son, Ki-Min,Hong, Shin-Nam,Lee, In-Gyu,Song, Yo-Seung 한국전기전자재료학회 2006 전기전자재료학회논문지 Vol.19 No.9
In this dissertation, Ru-Zr metal gate electrode deposited on two kinds of dielectric were formed for MOS capacitor. Sample co-sputtering method was used as a alloy deposition method. Various atomic composition was achieved when metal film was deposited by controlling sputtering power. To study the characteristics of metal gate electrode, C-V(capacitance-voltage) and I-V(current-voltage) measurements were performed. Work function and equivalent oxide thickness were extracted from C-V curves by using NCSU(North Carolina State University) quantum model. After the annealing at various temperature, thermal/chemical stability was verified by measuring the variation of effective oxide thickness and work function. This dissertation verified that Ru-Zr gate electrodes deposited on $SiO_{2}\;and\;ZrO_{2}$ have compatible work functions for NMOS at the specified atomic composition and this metal alloys are thermally stable. Ru-Zr metal gate electrode deposited on $SiO_{2}\;and\;ZrO_{2}$ exhibit low sheet resistance and this values were varied with temperature. Metal alloy deposited on two kinds of dielectric proposed in this dissertation will be used in company with high-k dielectric replacing polysilicon and will lead improvement of CMOS properties.
열적으로 강인한 Molybdenium 게이트-PMOS Capacitor의 분석
이정민,서현상,홍신남,Lee, Jeong-Min,Seo, Hyun-Sang,Hong, Shin-Nam 한국전기전자재료학회 2005 전기전자재료학회논문지 Vol.18 No.7
In this paper, we report the properties of Mo metal employed as PMOS gate electrode. Mo on $SiO_2$ was observed to be stable up to $900^{\circ}C$ by analyzing the Interface with XRD. C-V measurement was performed on the fabricated MOS capacitor with Mo Bate on $SiO_2$. The stability of EOT and work-function was verified by comparing the C-V curves measured before and after annealing at 600, 700, 800, and $900^{\circ}C$. C-V hysteresis curve was performed to identify the effect of fired charge. Gate-injection and substrate-injection of carrier were performed to study the characteristics of $Mo-SiO_2$ and $SiO_2-Si$ interface. Sheet resistance of Mo metal gate obtained from 4-point probe was less than $10\;\Omega\Box$ that was much lower than that of polysilicon.
강영섭,서현상,노영진,이충근,홍신남 한국항행학회 2003 韓國航行學會論文誌 Vol.7 No.2
본 논문에서는 오래 전부터 NMOS의 게이트 전극으로 사용된 폴리실리콘을 대체할 수 있는 Ta-Ti 합금의 특성에 대해 연구하였다. 실리콘 기판 위에 열적으로 성장된 SiO₂위에 Ta과 Ti의 두 타깃을 사용하여 co-sputterring 방법으로 Ta-Ti 합금을 증착하였다. 각각의 타킷의 100W 의 sputtering power 로 증착하여 시편을 제작하였다. 또한 비교 분석을 위하여 Ta를 100W의 sputtering power로 증착한 시편도 제작하였다. 제작된 Ta-Ti 합금 게이트의 열적/화학적 안정성을 검토하기 위하여 600℃에서 급속열처리를 수행한 결과 소자의 성능 저하는 나타나지 않았다. 또한 전기적 특성 분석 결과 Ta-Ti합금은 NMOS 에 적합한 일합수인 4.13eV를 산출해 낼수 있었고, 면저항 역시 폴리실리콘에 비해 낮은 값을 얻을 수 있었다. In this paper, characteristics of Ta-Ti alloy was studied as a gate electrode for NMOS devices to replace the widely used polysilicon. Ta-Ti alloy was deposited directly on SIO_2 by a co-sputtering method using two of Ta and Ti targets. The sputtering power of each metal target was 100W. To compare with Ta-Ti, Ta deposited with a 100W sputtering power was fabricated as well. In order to investigate the thermal/chemical stability of the Ta-Ti alloy gate, the alloy was annealed at 600℃ with rapid thermal annealer. No appreciable degradation of the device was observed. Also the results of electircal analysis showed that the work function of Ta-Ti metal alloy was about 4.1eV which was suitable for NMOS devices and sheet resistance of alloy was lower than that of polysilicon.