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Hgo07Cd0.3Te 박막의 LPE 성장시 성장시간에 따른 표면형상의 변화
김재묵,송원준,서상희,임성욱,최인훈,문성욱 대한금속재료학회(대한금속학회) 1990 대한금속·재료학회지 Vol.28 No.2
HgCdTe is the most widely used material for infrared photodetectors. HgCdTe epi-layers were grown on CdTe substrates with (111) orientation, using a slider LPE(Liquid Phase Epitaxy) technique. The change of surface morphology during LPE growth of Hg_(0.7)Cd_(0.3)Te was investigated. The wave-like surface at the initial stage of growth has transformed gradually to the terrace-like surface and the terrace width has increased with increasing growth time. Infrared tansmission was used to determine the composition of HgCdTe epi-layers.