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초고집적반도체의 커패시터용 강유전 박막의 전기적 특성 개선
마재평,박삼규,Mah Jae-Pyung,Park Sam-Gyu 한국마이크로전자및패키징학회 2004 마이크로전자 및 패키징학회지 Vol.11 No.3
PBT thin films were formed by rf-magnetron sputtering on $Pt/Ti/SiO_2/Si$ substrate. Bulk-PZT target containing $5\%$-excess PbO was used. After PZT thin films had been deposited at room temperature, remaining portion of the thin film was formed by in-situ process. The ferroelectric perovskite phase was formed at $650^{\circ}C$. The leakage current property was improved dramatically by 2-step sputtering, and in the sample containing optimum thickness of room temp.-layer very low leakage current of $2{\times}10^{-7}A/cm^2$ was shown. As a result of the investigation on the leakage current mechanism, the electrical conduction mechanism in all PZT thin films formed by several conditions was confirmed as bulk-limited mechanism. PZT 박막을 rf-마그네트론 스퍼터링으로 $Pt/Ti/SiO_2/Si$ 기판 위에 형성시켰다. $5\%$ 과잉 PbO 를 포함한 bulk PZT 타겟을 사용하였다. 상온에서 PZT 박막을 얇게 입힌 후 나머지 두께를 $650^{\circ}C$에서 in-situ 방법으로 형성시켰다. 강유전 특성을 갖는 PZT 상은 $650^{\circ}C$에서 형성되었다. 2단계 스퍼터링에 의해 누설전류 특성을 크게 증진시킬 수 있었고, 적절한 두께의 상온층을 포함시킨 경우 $2{\times}10^{-7}A/cm^2$의 매우 작은 누설전류를 나타냈다. 누설전류 기구에 대한 조사 결과, 여러 조건에서 제조된 PZT 박막의 전기전도는 모두 bulk-limit 기구에 의한 것임을 알 수 있었다.
각 층에 따른 염료감응형 태양전지의 특성 개선 - I (-상부전극을 중심으로)
마재평,박치선,Mah, Jae-Pyung,Park, Chi-Sun 한국반도체디스플레이기술학회 2011 반도체디스플레이기술학회지 Vol.10 No.2
Photovoltaic effect is confirmed in DSSC fabricated under the common conditions. In upper electrodes, validity of ZnO as new TCO material was investigated and an improvement of characteristics in DSSC was tried by control of process conditions at semiconductive powder layer. ZnO thin film showed very high resistivity, therefore efficiency of solar cell was lower than that of conventional ITO-related material. DSSC characteristics was able to improve by thin blocking layer doposited between the TCO and semiconductor layer.
2단계 스퍼터링으로 형성시킨 강유전 박막의 누설전류 개선
마재평,신용인,Mah Jae-Pyung,Shin Yong-In 한국마이크로전자및패키징학회 2006 마이크로전자 및 패키징학회지 Vol.13 No.1
2단계 스퍼터링으로 강유전 PZT 박막을 형성시켜 유전특성과 전도기구를 조사하였다. 또한 PZT 박막 내의 carrier를 보상해주기위해 도너 불순물을 도핑하였다. 2단계 스퍼터링으로 상온층 두에를 조절하여 누설전류를 $10^{-7}A/cm^2$ order까지 줄일 수 있었다. 전도기구가 bulk-limited의 하나임을 확인하였고 따라서 적정한 도너 불순물을 채택하였다. 도너 불순물을 도핑한 경우 2단계 스퍼터링한 PZT 박막의 누설전류 특성은 $10^{-8}A/cm^2$ order까지 개선되었다. Ferroelectric PZT thin films were formed by 2-step sputtering and their dielectric properties and conduction mechanisms were investigated. Also. donor impurity doping was tried to compensate the carriers in PZT thin films. The leakage current density was able to reduce to $10^{-7}A/cm^2$ order by 2-step sputtering with thickness control of room temp.-layer. The conduction mechanism was confirmed as bulk-limited, and optimum donor impurities on PZT thin film were taken. Especially, leakage current characteristics was improved to $10^{-8}A/cm^2$ order in donor-doped PZT thin films formed by 2-step sputtering.
2차 Seed Grain을 사용한 ZnO 바리스터의 제조
김형주,마재평,백수현,Kim, Hyung-Joo,Mah, Jae-Pyung,Paek, Su-Hyon 대한전자공학회 1990 전자공학회논문지 Vol.27 No.3
1차와 2차 Seed grain을 제조하였다. 보다 큰 grain size를 갖는 1차 seed의 제조 조건은 2.0mol.%의 $BaCO_3$ 첨가와 10시간의 소경이었다. 가장 큰 2차 seed를 얻을 수 있는 1차 seed의 첨가량이 3wt.%로 나타나서, 전통적 방식으로 제조된 바 있는 저전압용 바리스터계에 이를 첨가하여 저전압 ZnO 바리스터를 제조하였다. 이와 같은 조건하에서 제조된 바리스터는 대개 10V/mm의 항복전압과 15~22의 비선형지수를 나타냈다. We fabricated primary and secondary seed grains. Primary seed grains having larger grain size were obtained under the conditions that were 2.0mol.% $BaCO_3$ and 10 hours sintering. The amount of primary seed grain that yield the largest secondary seed grain was chosen as 3wt.% and we fabricated the low voltage varistors which were jointed the low voltage-oriented ZnO varistor system made by conventional method with the secondary seed grains. As a result, the ZnO varistors under those conditions showed approximately 10V/mm of nonlinear resistance and 15-22 of nonlinear exponent.
Behavior of $Sb_2O_3$ in the Calcination Process of ZnO Varistor
최진석,마재평,백수현,Choi, Jin Seog,Mah, Jae Pyung,Paek, Su-Hyon The Institute of Electronics and Information Engin 1987 전자공학회논문지 Vol.24 No.3
The current-voltage characteristics of the ZnO varisor with and without Sb2O3 which were fabricated with the various calcination and sintering temperature were discussed by comparing the results of SEM-microstructures and X-ray diffraction analysis. The samples were calcined at the temperature up to 800\ulcorner for 2 hours and they were sintered at 1200-1300\ulcorner for 1 hour. Then, we applied the power up to dc 200 volt to the samples and measured the output current up to 100mA. The samples without Sb2O3 had lower nonlinear resistances at the all calcination and sintering temperatures due to the large grains because of not forming Spinel phase. The other samples contained Sb2O3 could form Pyrochlore and Spinel phases at the all calcination temperatures by X-ray diffraction phase analysis. We found that the Spinel phases which were formed at the calcination process inhibit growth of ZnO grain and give rise to the change of nonlinear resistances by SEM-microstructures. And we found that the base of ZnO grain growth control is strongly dependent on the behavior of Sb2O3 in calcination process.
Properties of Zn O Varistor Fabricated by Seed Grain Method
권오경,마재평,백수현,Kwon, Oh Kyung,Mah, Jae Pyung,Paek, Su Hyon The Institute of Electronics and Information Engin 1987 전자공학회논문지 Vol.24 No.3
We investgated I-V cahracteristics and relationship between microstructures and electrical properties in the specimens fabricated by seed grain method for low voltage Zn O varistor. Breaksown voltage was mainly dependent on seed grain size, and could be cntrolled to 10V/mm -15V/mm by sintering temperature and time. In non-seed grain method breakdown voltage generally agreed with final grain size, but did not always agree with it by the change of barrier phase distribution in case of the method using seed grains.
황문식(Moon-Sick Hwang),마재평(Jae-Pyung Mah) 대한전자공학회 2007 대한전자공학회 학술대회 Vol.2007 No.7
ZnO thin films were deposited by rf magnetron sputtering method on Si wafer and glass substrate. Resistivity and transmittance of ZnO thin films were investigated with depo rate and film thickness. Deposited ZnO thin films had good electrical properties (p=3.7×10?²Ωㆍ ㎝) and high transmittance (>87%) on the visible light. Deposited ZnO thin films and FTO(Fluorine-doped tin oxide(SnO₂:F)) were used as TCO(transparent conductive oxide) in dye-sensitized solar cell(DSSC). Finally. ZnO-based and FTO-based DSSC were compared with Isc, Voc and efficiency.
조현준,백수현,최진석,마재평,고철기,김동원,Cho, Hyun-Choon,Paek, Su-Hyon,Choi, Jin-Seok,Mah, Jae-Pyung,Ko, Chul-Gi,Kim, Dong-Won Materials Research Society of Korea 1992 한국재료학회지 Vol.2 No.1
Tantalum silicide films are prepared from a composite $TaSi_{28}$ target source and subjected to rapid thermal annealing($500-1100^{\circ}C$, 20sec) in Ar ambient. The formation and the properties of tantalum silicides have been investigated by using 4-point probe, x-ray diffraction, scanning electron microscope(SEM), Auger electron spectroscope(AES), and ${\alpha}$-step. It has been found that the sample annealed above $700^{\circ}C$ forms a polycrystalline $TaSi_2$ phase, and grains grow in granular form regardless of the kind of substrates. The mechanism of the formation of tantalum silicide is the nucleation and growth by Ta-Si short range reaction. The tantalum silicide film has the relatively low resistivity($70-72.5{\mu}{\Omega}-cm$) and smooth surface roughness.
Pd이 코팅된 단일모드 광섬유 센서를 이용한 수소 검출 시스템
김광택,박선옥,황보승,마재평,백세종,임기건,김태언,김회종,Kim, Kwang-Taek,Park, Son-Oc,HwangBo, Seung,Mah, Jae-Pyung,Baik, Se-Jong,Im, Kie-Gon,Kim, Tae-Un,Kim, Hwe-Jong 한국광학회 2007 한국광학회지 Vol.18 No.6
단일모드 광섬유를 이용한 수소센서의 특성을 이론 및 실험으로 분석하였다. 검출 소재로 팔라듐(Pd:palladium) 필름을 이용하였고 광섬유와 Pd 사이의 접착력을 강화하기 위해 니켈(Ni) 필름을 사용하였다. 제작된 센서의 반응감도와 반응시간은 팔라듐 박막의 두께에 크게 의존하였다. 단일모드 광섬유 끝단에 접착층으로 5 nm 두께의 Ni 박막과 감응막으로 10 nm 두께의 Pd가 코팅된 센서는 0.6 dB의 반사도의 변화와 $3{\sim}5$초의 반응시간을 보였다. The characteristics of the single mode fiber hydrogen sensor have been investigated theoretically and experimentally. Palladium is adopted as a material for the transducer and a thin Ni film is used for the adhesion between the fiber end and the Pd film. It is shown that sensitivity and response time strongly depend on the thickness of Pd film. The single mode fiber sensor coated with 5 nm thick Ni adhesion layer and 10 nm thick Pd transducer layer showed 0.6 dB change of reflectivity and $3{\sim}5$ sec of response time as it absorbed 4% hydrogen gas.