S-L-S 성장기구를 이용한 양질의 골드 나노선 합성

노임준,김성현,신백균,조진우,No, Im-Jun,Kim, Sung-Hyun,Shin, Paik-Kyun,Cho, Jin-Woo 한국전기전자재료학회 2012 전기전자재료학회논문지 Vol.25 No.11

Single crystalline Au nanowires were successfully synthesized in a tube-type furnace. The Au nanowires were grown by vapor phase synthesis technique using solid-liquid-solid (SLS) mechanism on substrates of corning glass and Si wafer. Prior to Au nanowire synthesis, Au thin film served as both catalyst and source for Au nanowire was prepared by sputtering process. Average length of the grown Au nanowires was approximately 1 ${\mu}m$ on both the corning glass and Si wafer substrates, while the diameter and the density of which were dependent on the thickness of the Au thin film. To induce a super-saturated states for the Au particle catalyst and Au molecules during the Au nanowire synthesis, thickness of the Au catalyst thin film was fixed to 10 nm or 20 nm. Additionally, synthesis of the Au nanowires was carried out without introducing carrier gas in the tube furnace, and synthesis temperature was varied to investigate the temperature effect on the resulting Au nanowire characteristics.

합성수용액의 Preheating 시간을 변화시켜 수열합성법으로 성장시킨 산화아연 나노선

노임준,신백균,No, Im-Jun,Shin, Paik-Kyun 한국전기전자재료학회 2012 전기전자재료학회논문지 Vol.25 No.6

ZnO nanowires were synthesized by hydrothermal technique. Prepared synthesis aqueous solutions were preserved by preheating in autoclave type synthesis equipment with various preheating time of 1 h difference. ITO-coated corning glass substrates deposited with AZO seed layers were then inserted in the preheated synthesis aqueous solutions and ZnO nanowires were grown for 180 min at $90^{\circ}C$. Density, length and aspect ratio of the grown ZnO nanowires were investigated. Composition, structural and optical properties of the grown ZnO nanowires were analyzed. Characteristics of the ZnO nanowires were comparatively studied in relation with $Zn^{2+}$ ion concentration measured directly after the preheating of synthesis aqueous solution.

플라스틱 기판에 제작된 유기박막태양전지의 출력특성 경시변화

노임준,이선우,신백균,No, Im-Jun,Lee, Sunwoo,Shin, Paik-Kyun 한국진공학회 2013 Applied Science and Convergence Technology Vol.22 No.4

$PCDTBT:PC_{71}BM$과 $PTB7:PC_{71}BM$을 유기고분자 활성층 재료로 이용한 Bulk Hetero-Junction (BHJ) 구조의 유기박막태양전지를 플라스틱 기판 위에 각각 제작하여, 시간변화에 따른 단락전류밀도($J_{SC}$), 개방전압($V_{OC}$), 곡선인자(FF) 및 전력변환효율(PCE) 등 출력특성의 변화에 대해 고찰하였다. 유기박막태양전지의 출력특성 파라메터는 시간 경과에 따라 모두 감소하는 경향을 나타내었으며, 특히 개방전압의 감소폭이 컸다. 이러한 개방전압 감소의 원인은 빛에 대한 장시간의 노출과 산소를 포함하는 수분과의 접촉에 의한 LUMO 준위와 HOMO 준위 차의 감소가 그 원인이라 생각되며, 그 메커니즘에 대해 고찰하였다. 또한 유기박막태양전지 소자의 직렬 및 병렬 저항 값은 감소하다가 다시 증가하는 경향을 보였다. 이는 LUMO 준위와 HOMO 준위 차가 감소함에 의한 것과 공액 고분자 활성층 내부에서의 열적과정 손실에 기인하여 전극과 고분자의 계면에서의 접촉저항의 증가 때문이라고 생각된다. 유기박막태양전지의 전력변환효율은 초기에 급격한 감소를 보이다가 시간이 지날수록 감소폭이 차츰 둔화되어 한계치에 도달한 후, 포화되는 경향을 보였다. 이것이 유기박막태양전지가 실제 구동에서 발생시킬 수 있는 최소 출력특성값인 것으로 판단된다. Two types of organic thin film solar cell devices with bulk hetero-junction (BHJ) structure were fabricated on plastic substrates using conjugated polymers of $PCDTBT:PC_{71}BM$ and $PTB7:PC_{71}BM$ blended as active channel layer. Time-variant characteristics of the organic thin film solar cell devices were investigated: short circuit current density ($J_{SC}$); open circuit voltage ($V_{OC}$); ; fill factor (FF); power conversion efficiency (PCE, ŋ). All the performance parameters were degraded by progress of the measurement time, while $V_{OC}$ showed the most drastic decrease with time. Possible factors to cause the time-variant alteration of performance parameters were discussed to be clarified.

PLD 기술로 제작된 ZnO 박막의 특성

노임준(Im-Jun No),신백균(Paik-Kyun Shin),이능헌(Neung-Heon Lee),김용혁(Yong-Hyuk Kim),지승한(Seung-Han Ji),이상희(Sang-Hee Lee),한상옥(Sang-Ok Han) 대한전기학회 2006 대한전기학회 학술대회 논문집 Vol.2006 No.7

Transparent ZnO thin films were deposited on quartz substrates by a KrF pulsed laser deposition (PLD) technique with different process conditions such as substrate temperature (Ts) and oxygen ambient pressure (pO₂). Surface morphology, crystal structure, and electrical properties of the ZnO films were investigated in order to characterize their thin film properties. The pulsed laser deposited ZnO films showed highly c-oriented crystalline structures depending on the process conditions: the highest FWHM (Full Width Half Maximum) value of (002) peak was observed for the ZnO film prepared at T₃=550℃, pO₂=5mTorr and laser fluence of 2J/㎠.

평판디스플레이 응용을 위한 AZO 투명전도막의 전기적, 구조적 및 광학적 특성

노임준(Im-Jun No),김성현(Sung-Hyun Kim),박동화(Dong-Wha Park),신백균(Paik-Kyun Shin) 대한전기학회 2009 전기학회논문지 Vol.58 No.10

Transparent conducting aluminum-doped zinc oxide (AZO) thin films were deposited on Corning glass substrate using an Gun-type rf magnetron sputtering deposition technology. The AZO thin films were fabricated with an AZO ceramic target (Zn: 98wt.%, Al₂O₃: 2wt.%). The AZO thin films were deposited with various growth conditions such as the substrate temperature, oxygen pressure. X-ray diffraction (XRD), UV/visible spectroscope, atomic force microscope (AFM), and Hall effect measurement system were done in order to investigate the properties of the AZO thin films Among the AZO thin films prepared in this study, the one formed at conditions of the substrate temperature 100℃, Ar 50 sccm, O₂ 5 sccm and working pressure 5 mtorr showed the best properties of an electrical resistivity of 1.763×10<SUP>-4</SUP> [Ωㆍ㎝], a carrier concentration of 1.801×10<SUP>21</SUP> [㎝<SUP>-3</SUP>], and a carrier mobility of 19.66 [㎠/VㆍS], which indicates that it could be used as a transparent electrode for thin film transistor and flat panel display applications.

수열합성법에 의해 성장된 ZnO 나노와이어의 전계방출 특성

노임준(Im-Jun No),김성현(Sung-Hyun Kim),신백균(Paik-Kyun Shin) 한국조명·전기설비학회 2010 조명·전기설비학회논문지 Vol.24 No.2

본 논문은 수열합성법에 의해 합성된 ZnO 나노와이어의 전계방출 특성을 연구하였다. ZnO 나노와이어는 핫플레이트 위에서 90[℃]의 온도로 Au 박막위에서 합성되었으며, ZnO 나노와이어의 팁을 형성하기 위한 캡핑 재료로 SDS(Sodium Dodecyl Sulfate) 를 0.05~0.3[wt%] 용액에 혼합하였다. 2시간동안 수열합성 후 체인 형태의 ZnO 나노와이어가 성장되었다. 고순도의 ZnO 나노와이어는 울자이트(Wurzite) 구조의 팁 형태를 보였으며, ZnO 나노와이어의 전계방출 특성은 고진공 챔버에서 측정하였고, 나노와이어의 턴-온전계는 0.1[㎂/㎠] 의 전류밀도에서 4.1[V/㎛]를 나타내었다. We fabricated FEDs(Filed emission devices) based on ZnO nanowires. The ZnO nanowires were synthesized on Au thin films by hydrothermal method at the temperature of 90[℃] on hot plate. In order to form tips of the ZnO nanowire, SDS(Sodium Dodecyl Sulfate) was mixed in 0.05~0.3[wt%] solution as capping material. After 2 hour growth, we obtained nanowires of chain form. The high-purity nanowires showed sharp tip geometry with a wurtzite structure. The field emission properties of the ZnO nanowires were investigated in high vacuum chamber. The turn-on field for the ZnO nanowires was found to be about 4.1[V/㎛] at a current density of 0.1[㎂/㎠].

ITO 전극의 오존 표면처리에 의한 플렉시블 PCDTBT

노임준(Im-Jun No),임영택(Young-Taek Lim),신백균(Paik-Kyun Shin) 한국조명·전기설비학회 2012 조명·전기설비학회논문지 Vol.26 No.11

Flexible organic thin film solar cell device with Bulk Hetero-Junction (BHJ) structure was fabricated with blended conjugated polymer of PCDTBT:PC<SUB>71</SUB>BM as active layer. Surface of ITO anode for the organic solar cell device was treated with ozone. The organic solar cell device with bare ITO showed short circuit current density (Jsc) of 8.2mA/cm2, open-circuit voltage (Voc) of 0.73V, fill factor (FF) of 0.36, and power conversion efficiency (PCE) of 2.16%, respectively. The organic solar cell device with ozone treated ITO anode revealed distinctively improved performance parameters:Jsc of 9.8mA/cm2, Voc of 0.82V, FF of 0.43, PCE(η) of 3.42%.

Nd:YAG-PLD법에 의해 제작된 ZnO:AI 박막의 구조적, 광학적, 전기적 특성

魯林俊(Im-Jun No),林栽星(Jae-Sung Lim),申白均(Paik-Kyun Shin),李天(Cheon Lee) 대한전기학회 2007 전기학회논문지 Vol.56 No.9

Aluminum doped zinc oxide (AZO) thin films were deposited on corning glass substrates using an Nd:YAG pulsed laser deposition technology. The AZO thin films were deposited with various growth conditions such as the substrate temperature and oxygen partial pressure. In this work, we used various measurement technologies in order to investigate the electrical, structural, and optical properties of the AZO thin films. Among the AZO thin films, the one prepared at the substrate temperature of 300 ℃ and oxygen partial pressure of 5 mTorr showed the best properties of an electrical resistivity of 4.63×l0?⁴ Ωㆍ㎝, a carrier concentration of 9.25×10²? ㎝?³, and a carrier mobility of 31.33 ㎠/Vㆍs. All the AZO thin films showed an high average optical transmittance over 90 % in visible region.

나노뿔 형태로 제작된 ZnO 나노선의 전계방출 특성

노임준(Im-Jun No),신백균(Paik-Kyun Shin) 대한전기학회 2012 전기학회논문지 Vol.61 No.4

ZnO nanowires were fabricated by hydrothermal synthesis technique for field emission device application. Al-doped zinc oxide (AZO) thin films were prepared as seed layer of catalyst for the ZnO nanowire synthesis, for which conductivity of the seed layer was tried to be improved for enhancing the field emission property of the ZnO nanowire. The AZO seed layer revealed specific resistivity of 7.466×10-4[Ω·㎝] and carrier mobility of 18.6[㎠/Vs]. Additionally, upper tip of the prepared ZnO nanowires was treated by hydrochloric acid (HCl) to form a nanocone shape of ZnO nanowire, which was aimed for enhanced focusing of electric field on that and resultingly to improve field emission property of the ZnO nanowires. The ZnO nanowire with nanocone shape revealed decreased threshold electric field and increased current density than those of the simple ZnO nanowires.

마그네트론 스퍼터링법으로 제작된 GZO 투명전도막의 전기적 및 광학적 특성

노임준(Im-Jun No),김성현(Sung-Hyun Kim),신백균(Paik-Kyun Shin),이경일(Kyung-Il Lee),김선민(Sun-Min Kim),조진우(Jin-Woo Cho) 한국조명·전기설비학회 2010 조명·전기설비학회논문지 Vol.24 No.4

본 논문에서는 rf 마그네트론 스퍼터링 기술을 이용하여 코닝 글라스 기판 위에 갈륨이 도핑된 산화아연(GZO)을 투명 전도막으로 제작하여 그 전기적 및 광학적 특성을 조사하였다. GZO 박막의 제작은 Zn : 97[wt%], Ga₂O₃ : 3[wt%]의 GZO 세라믹 타겟을 이용하였으며, 기판온도 및 산소압력과 같은 증착조건을 변화시키며 증착하였다. 본 연구에서 제작된 GZO 박막중 기판온도 200[℃], Ar 50[sccm], O₂ 5[sccm], rf power 80[W] 및 증착압력 5[mtorr]의 조건에서 제작된 박막에서 가시광 영역에서 90[%] 이상의 높은 가시광 투과율, 2.536×10<SUP>-4</SUP>[Ω?㎝]의 비저항, 7.746×10<SUP>20</SUP>[㎝<SUP>-3</SUP>]의 캐리어 농도 및 31.77[㎠/V?S]의 캐리어 이동도로 가장 좋은 전기적 특성이 관찰되었다. Transparent conducting gallium-doped zinc oxide (GZO) thin films which were deposited on Corning glass substrate using an Gun-type rf magnetron sputtering deposition technology. The GZO thin films were fabricated with an GZO ceramic target (Zn : 97[wt%], Ga₂O₃ : 3[wt%]). The GZO thin films were deposited by varying the growth conditions such as the substrate temperature, oxygen pressure. Among the GZO thin films fabricated in this study, the one formed at conditions of the substrate temperature of 200[℃], Ar flow rate of 50[sccm], O₂ flow rate of 5[sccm], rf power of 80[W] and working pressure of 5[mtorr] showed the best properties of an electrical resistivity of 2.536×10<SUP>-4</SUP>[Ω?㎝], a carrier concentration of 7.746×10<SUP>20</SUP>[㎝<SUP>-3</SUP>], and a carrier mobility of 31.77[㎠/V?S], which indicates that it could be used as a transparent electrode for thin film transistor and flat panel display applications.