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신백균,이덕출 ( P . K . Shin,D . C . Lee ) 한국센서학회 1997 센서학회지 Vol.6 No.3
Using SiC1₂H₂, NH₃ and N₂O, we have fabricated silicon oxynitride (Si_xO_yN_z) layers on thermally oxidized silicon wafer by low pressure chemical vapor deposition. Three different compositions were achieved by controlling gas flow ratios(NH₃/N₂O) to 0.2, 0.5 and 2 with fixed gas flow of SiC1₂H₂. Ellipsometry and high frequency capacitance-voltage(HFCV) measurements were adapted to investigate the difference of the refractive index, dielectric constant, and composition, respectively. Regardless of nitride content, silicon oxynitrides had similar stability to silicon nitrides. The relative standing of alkali ion sensitivity in silicon oxynitride layers was influenced by nitride content. The better alkali ion-sensitivity was achieved by increasing oxide content in bulk of silicon oxynitrides.
신백균 대한전기학회 2006 전기학회논문지C Vol.55 No.1(C)
- Transparent ZnO thin films were prepared by KrF pulsed laser deposition (PLD) technique and applied to a bottom-gate type thin film transistor device as an active channel layer. A high conductive crystalline Si substrate was used as an metal-like bottom gate and SiN insulating layer was then deposited by LPCVD(low pressure chemical vapour deposition). An aluminum layer was then vacuum evaporated and patterned to form a source/drain metal contact. Oxygen partial pressure and substrate temperature were varied during the ZnO PLD deposition process and their influence on the thin film properties were investigated by X-ray diffraction(XRD) and Hall-van der Pauw method. Optical transparency of the ZnO thin film was analyzed by UV-visible photometer. The resulting ZnO-TFT devices showed an on-off ration of 106 and field effect mobility of 2.4-6.1 cm2/Vs.