http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
전자빔 증착법으로 제조된 박막 태양전지용 CuGaS<sub>2</sub> 박막의 특성
정운조 ( Woon-jo Jeong ),문인섭 ( In-seob Moon ),조순계 ( Soon-kye Cho ),김민기 ( Min-ki Kim ),김운섭 ( Woon-sub Kim ),부수일 ( Su-il Boo ),안호근 ( Ho-geun Ahn ),양현훈 ( Hyeon-hun Yang ),박계춘 ( Gye-choon Park ) 한국환경기술학회 2008 한국환경기술학회지 Vol.9 No.2
전자빔 증착법에 의해 70℃의 기판온도와 350℃에서 60분 동안 열처리한 경우 단상의 CuGaS<sub>2</sub> 박막이 얻어졌으며, 이때의 XRD 회절 피크는 회절각 28.8°에서 (112)방향으로 가장 강한 피크가 나타났고, 두 번째로 강한 피크는 회절각 49.1°에서 (204)방향을 나타났다. 또한 CuGaS<sub>2</sub> 박막의 격자상수 a와 c는 각각 5.37Å과 10.54Å이었다. 그리고 CuGaS<sub>2</sub> 박막의 그레인 사이즈는 최대 1μm 정도였다. 또한 황이 과잉 공급된 CuGaS<sub>2</sub> 박막의 (112) 피크가 황이 추가로 공급되지 않은 경우에 비해 약 10% 정도 더 강하게 나타남을 알 수 있었다. 그리고 이와 같은 제조된 CuGaS<sub>2</sub> 박막의전기저항률, 홀 이동도 및 캐리어 농도는 각각 1.4Ω-cm, 15㎠/V·sec and 2.9×10<sup>17</sup>cm<sup>-3</sup>이었다. 본 연구에서 CuGaS<sub>2</sub> 박막의 저항률은 홀 이동도보다 캐리어 농도에 더 지배적임을 알 수 있었고, 상기와 같이 제조된 CuGaS<sub>2</sub> 박막은 모두 p-type 반도체 특성을 나타냈다. By EBE(Electron Beam Evaporation) method, Single phase CuGaS<sub>2</sub> thin film with the highest diffraction peak of (112) at diffraction angle(2θ) of 28.8˚ was made at substrate temperature of 70℃, annealing temperature of 350℃ and annealing time of 60min. And second highest (204) peak was shown at diffraction angle of (2θ) of 49.1˚. Lattice constant of a and c of that CuGaS<sub>2</sub> thin film was 5.37Å and 10.54Å respectively. The greatest grain size of the thin film was about 1㎛. The (112) peak of single phase of CuGaS<sub>2</sub> thin film at annealing temperature of 350℃ with excess S supply was appeared with a little higher about 10% than that of no excess S supply. And the resistivity, Hall mobility and carrier concentration at room temperature of p-type CuGaS<sub>2</sub> thin film was 1.4Ω-cm, 15㎠/V·sec and 2.9×10<sup>17</sup>cm<sup>-3</sup> respectively. It was known that carrier concentration had considerable effect than mobility on variety of resistivity of the fabricated CuGaS<sub>2</sub> thin film, and the polycrystalline CuGaS<sub>2</sub> thin films were made at these conditions were all p-type.
D.C magnetron sputter법으로 증착된 TiAlN의 중간층에 따른 특성연구
김명호,이도재,이광민,김운섭,김민기,박범수,양국현,Kim, Myoung-Ho,Lee, Doh-Jae,Lee, Kwang-Min,Kim, Woon-Sub,Kim, Min-Ki,Park, Burm-Su,Yang, Kook-Hyun 한국재료학회 2008 한국재료학회지 Vol.18 No.10
TiAlN films were deposited on WC-5Co substrates with different buffer layers by D.C. magnetron sputtering. The films were evaluated by microstructural observations and measuring of preferred orientation, hardness value, and adhesion force. As a process variable, various buffer layers were used such as TiAlN single layer, TiAlN/TiAl, TiAlN/TiN and TiAlN/CrN. TiAlN coating layer showed columnar structures which grew up at a right angle to the substrates. The thickness of the TiAlN coating layer was about $1.8{\mu}m$, which was formed for 200 minutes at $300^{\circ}$. XRD analysis showed that the preferred orientation of TiAlN layer with TiN buffer layer was (111) and (200), and the specimens of TiAlN/TiAl, TiAlN/CrN, TiAlN single layer have preferred orientation of (111), respectively. TiAlN single layer and TiAlN/TiAl showed good adhesion properties, showing an over 80N adhesion force, while TiAlN/TiN film showed approximately 13N and the TiAlN/CrN was the worst case, in which the layer was destroyed because of high internal residual stress. The value of micro vickers hardness of the TiAlN single layer, TiAlN/TiAl and TiAlN/TiN layers were 2711, 2548 and 2461 Hv, respectively.