http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
리튬이 주입된 전기변색 V$_2$O$_{5}$ 박막의 광 특성에 관한 연구
하승호,조봉희,김영호,Ha, Seung-Ho,Cho, Bong-Hee,Kim, Young-Ho 한국재료학회 1995 한국재료학회지 Vol.5 No.7
진공증착법으로 제작한 V$_2$O$_{5}$ 박막의 두께 및 결정성에 따른 전기변색 특성을 체계적으로 조사하였다. 증착된 박막은 노란색을 띄고 있었으며 14$0^{\circ}C$ 보다 높은 기판온도에서 증착된 V$_2$O$_{5}$ 박막은 결정질로 낮은 기판온도에서 증착된 박막들은 비정질로 밝혀졌다. 리튬 이온 주입에 따른 V$_2$O$_{5}$ 박막의 광 변조 특성 결과 V$_2$O$_{5}$ 박막의 두께와 결정성에 관계없이 300~500nm 파장영역에서는 산화발색이 500~1100nm 파장영역에서는 환원 발색이 나타났다. 비정질과 결정질 Li$_{x}$ V$_2$O$_{5}$ 박막의 optical band gap 에너지는 리튬 이온 주입양이 증가함에 따라 (x=0.0~0.6) 각각 0.75 [eV], 0.17 [eV]씩 높은 에너지쪽으로 이동하였다. 비정질 Li$_{x}$ V$_2$O$_{5}$ 박막의 coloration efficiency는 근적외선 영역에서는 리튬 이온 주입과 박막두께에 따라 거의 변화가 없었으나 blue와 near-UV 영역에서는 absorption edge가 500nm 파장근처에서 높은 에너지 부근으로 이동됨으로 인하여, 박막두께가 증가하고 리튬 이온주입양이 감소할수록 coloration efficiency가 상당히 증가하는 것으로 나타났다. 그러나 결정질 Li$_{x}$ V$_2$O$_{5}$ 박막의 경우 coloration efficiency는 전파장영역에서 리튬 이온 주입양과 박막두께에 거의 영향을 받지 않는 것으로 밝혀졌다. The electrochromic properties of vacuum deposited V$_2$O$_{5}$ thin films as a function of crystallinity and film thickness have been systematically investigated. The as-deposited films have slightly yellow appearance. V$_2$O$_{5}$ films deposited at higher substrate temperature(>14$0^{\circ}C$) are found to be crystalline while those deposited at low substrate temperature are amorphous. The optical modulation on lithium ion injection indicates that V$_2$O$_{5}$ films exhibit anodic coloration in the 300~500 nm wavelength range and cathodic coloration in the 500~1100nm wavelength range independent of crystallinity and film thickness. The optical band gap energy of crystalline and amorphous Li$_{x}$ VV$_2$O$_{5}$ films shifts to higher energies by 0.17 eV and 0.75 eV, respectively, with increasing lithium ion injection up to x=0.6. The coloration efficiency of amorphous Li$_{x}$ V$_2$O$_{5}$ exhibits very little dependence on film thickness and lithium ion injection amounts in the near-infrared while it increases significantly with increasing film thickness and decreasing lithium ion injection amounts in the blue and near-UV due to the shift in absorption edge below around 500nm. However, the coloration efficiency of crystalline Li$_{x}$ V$_2$O$_{5}$is relatively independent of film thickness and lithium ion injection in the 300~1100 nm wavelength range.
저온 제작 다결정 실리콘 박막 트랜지스터의 off-current메카니즘에 관한 연구
진교원,김진,이진민,김동진,조봉희,김영호,Chin, Gyo-Won,Kim, Jin,Lee, Jin-Min,Kim, Dong-Jin,Cho, Bong-Hee,Kim, Young-Ho 한국전기전자재료학회 1996 電氣電子材料學會誌 Vol.9 No.10
The conduction mechanisms of the off-current in low temperature (.leq. >$600^{\circ}C$) processed polycrystalline silicon thin film transistors (LTP poly-Si TFT'S) have been systematically studied. Especially, the temperature and bias dependence of the off-current between hydrogenated and nonhydrogenated poly-Si TFT's were investigated and compared. The off-current of nonhydrogenated poly-Si TF's is because of a resistive current at low gate and drain voltage, thermally activated current at high gate and low drain voltage, and Poole-Frenkel emission current in the depletion region near the drain at high gate and drain voltage. After hydrogenation it has shown that the off -current mechanism is caused mainly by thermal activation and that the field-induced current component is suppressed.
비정질 및 결정질 산화 텅스텐 박막의 일렉트로크로믹 특성
金榮浩,趙鳳熙 수원대학교 산업기술연구소 1992 산업기술연구소논문집 Vol.7 No.-
The physical and electrochromic properties of the amorohous and crystalline tungsten oxide films prepared by thermal and electron-beam evaporation of tungsten oxide powder have been investigated. According to X-ray diffraction analysis, the tungsten oxide films deposited at 400℃ are crystalline, which these deposited at lower temperature are amorphous. The amorphous tungsten oxide films have a large optical density and good electrochromic properties than the crystalline tungsten oxide films. Thus it can be suggested that the amorphous films are more porous than the crystalline films and that the injection of the Li^+ ion into the amorphous films will be easier than into the crystalline tungsten oxide films.
Offset gate 구조를 갖는 poly-Si TFT's의 ON/OFF 전류비 향상
趙鳳熙,金榮浩 수원대학교 산업기술연구소 1998 산업기술연구소논문집 Vol.13 No.-
We have fabricated offset gated n-channel polysilicon thin film transistors with different offset length in order to reduce anomalous off-current and examined the effect of offset gated structure on poly-Si TFT's. It is found that offset regions behaves as a parasitic series resistance that lowers the on-current as it reduces the off-current. For the W/L =50㎛/10㎛ of poly-Si TFT's studied the optimum offset length is 0.5㎛ and its on/off current ratio is improved about two order magnitude larger than that of the conventional structure TFT's.