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플렉서블 디스플레이 적용을 위한 저온 실리콘 질화막의 N<sub>2</sub> 플라즈마 처리 영향
김성종,김문근,권광호,김종관,Kim, Seongjong,Kim, Moonkeun,Kwon, Kwang-Ho,Kim, Jong-Kwan 한국전기전자재료학회 2014 전기전자재료학회논문지 Vol.27 No.1
Silicon nitride thin film deposited with Plasma Enhanced Chemical Vapor Deposition was treated by a nitrogen plasma generated by Inductively Coupled Plasma at room temperature. The treatment was investigated by Fourier Transform Infrared Spectroscopy and Atomic Force Microscopy on the surface at various RF source powers at two RF bias powers. The amount of hydrogen was reduced and the surface roughness of the films was decreased remarkably after the plasma treatment. In order to understand the causes, we analyzed the plasma diagnostics by Optical Emission Spectroscopy and Double Langmuir Probe. Based on these analysis results, we show that the nitrogen plasma treatment was effective in the improving of the properties silicon nitride thin film for flexible display.