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권순석,조계선,김명녕,이대복 大田産業大學校 1994 한밭대학교 논문집 Vol.11 No.0201
When a MOS device is exposed to ionizing radiation, the resulting effects from this radiation can cause modulation and / or degradation in devices characteristics and its operating life. In this study, for investigation of radiation effects on P-type MOS capacitor, We performed to irradiate on the MOS capacitor with a cobalt-60 gamma ray source and measured the capacitance-voltage ( C-V ) method with gate oxide and total does. From the experimental result, as follows; 1. The flatband voltage (V_fb) and the threshold voltage (V_th) are shifted toward negative bias voltage with increasing irradiation does in P-type MOS capacitors. 2. C-V curves shows are strething-out due to the non-uniformity of interface trap distribution. This results are expiained using surface states at interface radiation-induced traps.
최규용,권순석,안병민,정규원,정환국,선희식,차상복,오수혁 대한내과학회 1989 대한내과학회지 Vol.37 No.2
Since 1972, necrotizing lymphadenitis, initially described in Japan, has been called subacute necrotizing lymphadenitis and histiocytic necrotizing lymphadenitis without granulocytic infiltration. We report a case of a 17-year-old male patient who presented with cervical lymphadenopathy, an elevated transaminase level and persistent low grade fever in whom a liver needle biopsy and lymph node biopsy were performed. The histopathologic features of the lymph nodes showed findings consistent with subacute necrotizing lymphadenitis.