http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
MA법으로 제조된 Ni기 합금에서 Y<sub>2</sub>O<sub>3</sub> 첨가에 따른 인장강도변화와 시효처리 효과
김일호,이원식,고세현,장진만,권숙인,Kim, Il-Ho,Lee, Won-Sik,Ko, Se-Hyun,Jang, Jin-Man,Kwun, Sook-In 한국분말야금학회 2008 한국분말재료학회지 (KPMI) Vol.15 No.1
Ni-20Cr-20Fe-5Nb alloy with or without $Y_2O_3$ was manufactured by mechanical alloying process and consolidated by spark plasma sintering (SPS). The grain size of the alloy with $Y_2O_3$ was smaller than that of alloy without $Y_2O_3$ which results from the effect of $Y_2O_3$ suppressing grain growth. The tensile strength at room temperature was increased by the addition of $Y_2O_3$ but decreased abruptly at temperature above $600^{\circ}C$. It seems to result from the change of deformation mechanism due to fine grain size, that is, grain boundary sliding is predominant at above $600^{\circ}C$ while internal dislocation movement is predominant at below $600^{\circ}C$. After conventional heat treatment process of solution treatment and aging, a small amount of ${\delta}(Ni_3Nb)$ phase was formed in Ni-20Cr-20Fe-5Nb alloy while a large amount of ${\gamma}"(Ni_3Nb)$ was formed in Inconel 718 in the previous report. This is due to exhaustion of Nb content by the formation of NbC during consolidation.
오석균,현승철,윤상현,김화택,김형곤,최성휴,윤창선,권숙일,Oh, Seok-Kyun,Hyun, Seung-Cheol,Yun, Sang-Hyun,Kim, Wha-Tek,Kim, Hyung-Gon,Choe, Sung-Hyu,Yoon, Chang-Sun,Kwun, Sook-Il 한국진공학회 1993 Applied Science and Convergence Technology Vol.2 No.2
SbSI : V, SbSeI : V, BiSI : V, BiSeI : V, SbSI : Cr, SbSeI : Cr, BiSI : Cr, BiSeI : Cr, SbSI : Ni, SbSeI : Ni, BiSI : Ni, 및 BiSeI : Ni 단결정을 고순도(99.9999%)의 성분원소에 혼합물을 투명석 영관내에 넣고, $1{\times}10^{-6}mmHg$의 진공에서 봉입하여 합성한 ingot를 사용하여, 수직 Bridgman 방법으로 성장시켰다. 성장된 단결정의 구조는 orthorhombic 구조이며, 광학적 energy band gap 구조는 간접전이형 이었고, energy gap의 온도의존성은 상전이에 관계되는 2개의 변곡점이 나타났으며, 연속된 영역에서는 Varshni 방정식을 만족하였다. 첨가한 3d 불순문(V, Cr, Ni)은 모결정의 $T_d$ 대칭을 갖는 주격자점에 +2가 ion으로 위치하며, 이들 ion의 energy 준위간의 전자전이에 의하여 불순물 광흡수 peak가 나타난다. Single crystals, SbSI : V, SbSeI : V, BiSI : V, BiSeI : V, SbSI : Cr, SbSeI : Cr, BiSI : Cr, BiSeI : Cr, SbSI : Ni, SbSeI : Ni, BiSI : Ni, and BiSeI : Ni were grown by the vertical Bridgman method. It is found that the grown single crystals have an orthorhombic structure and the indirect optical transitions. The temperature dependence of energy gap shows the two reflection point related with the phase transitions and is well fitted with Varshni equation in the continuous region. The optical absorption peaks due to the doped impurities (V, Cr and Ni) are respectively attributed to the electron transitions between the split energy levels of $V^{+2}$, $Cr^{+2}$ and $Ni^{+2}$ ions sited at $T_d$ symmetry of the host lattice.
현승철,오석균,윤상현,김화택,김형곤,최성휴,김창대,윤창선,권숙일,Hyun, Seung-Cheol,Oh, Seok-Kyun,Yun, Sang-Hyun,Kim, Wha-Tek,Kim, Hyung-Gon,Choe, Sung-Hyu,Kim, Chang-Dae,Yoon, Chang-Sun,Kwun, Sook-Il 한국진공학회 1993 Applied Science and Convergence Technology Vol.2 No.2
$SbS_{1-x}Se_xI,\;BiS_{1-x}Se_xI,\;Sb_{1-x}Bi_xSI,\;Sb_{1-x}Bi_xSeI,\;SbS_{1-x}Se_xI:Co,\;BiS_{1-x}Se_xI:Co,\;Sb_{1-x}Bi_xSI:Co$, and $Sb_{1-x}Bi_xSeI:Co$ single crystals were grown by the vertical Bridgman method using the ingots. It has been found that these single crystals have an orthorhombic structure and indirect optical transition. The composition dependences of energy gaps are given by $E_g(x)=E_g(0)-Ax+Bx^2$. The impurity optical absorption peaks due to cobalt deped with impurity are attributed to the electron transitions between the split energy levels of $Co^{2+}$ and $Co^{3+}$ ions sited at $T_d$symmetry of the host lattice.
Photoferroelectric 반도체의 광학적 특성연구 Ⅱ : (BiSI, BiseI, BiSI : Co 및 BiseI : Co 단결정의 광학적 특성에 관한 연구)
고재모(Jae-Mo Goh),윤상현(Sang-Hyun Yun),김화택(Wha-Tek Kim),최성휴(Sung-Hyu Choe),김형곤(Hyung-Gon Kim),김창대(Chang-Dae Kim),권숙일(Sook-Il Kwun) 한국진공학회(ASCT) 1992 Applied Science and Convergence Technology Vol.1 No.2
BiSI, BiSI : Co, BiseI 및 BiseI : Co 단결정을 고순도의 성분원소와 8.6 mole% 과잉의 Iodine를 투명석영관내에 넣고 진공봉입하여 합성한 ingot를 사용하여 수직 Bridgman 방법으로 성장시켰다. 성장된 단결정은 orthorhombic 구조였고, energy band 구조는 간접전이형으로 293K 에서 광학적 energy gap은 각각 1.590eV, 1.412eV, 1.282eV 및 1.249eV로 주어지며, energy gap의 온도의존성은 Varshni 방정식으로 잘 표현된다. Cobalt를 첨가할 때 나타나는 불순물 광흡수 peak는 T_d Symmetry 점에 위치한 Co^(2+), Co^(3+) ion의 energy 준위들 사이의 전자전이에 의해서 나타난다. Single crystals of BiSI, BiSI : Co, BiSel, and BiSel : Co were grown by the vertical Bridgman method using the initial ingots obtained from the stoichiometric mixture of Bi, S, Se, and I (excess of 8.6 mole%) elements of a high purity. It has been found that these single crystals have an orthorhombic structure and indirect optical transitions. At 293 K the indirect-band gap of these crystals is given by 1.590 eV for BiSI, 1.412 eV for BiSI : Co, 1.282 eV for BiSel, and 1.249 eV for BiSel : Co, respectively. The temperature dependence of the optical energy gaps is well fitted with the Varshni equation. The optical absorption peaks of cobalt impurity in these single crystals are attributed to the electronic transitions between the split energy levels of CO^(2+) and Co^(3+) ions located at T_d sites of the host material.
오석균(Seok-Kyun Oh),현승철(Seung-Cheol Hyun),윤상현(Sang-Hyun Yun),김화택(Wha-Tek Kim),김형곤(Hyung-Gon Kim),최성휴(Sung-Hyu Choe),윤창선(Chang-Sun Yoon),권숙일(Sook-Il Kwun) 한국진공학회(ASCT) 1993 Applied Science and Convergence Technology Vol.2 No.2
SbSI : V, SbSel : V, BiSI : V, BiSeI : V, SbSI : Cr, SbSeI : Cr, BiSI : Cr, SbSI : Ni, SbSeI : Ni, BiSI : Ni, 및 BiSeI : Ni 단결정을 고순도(99.9999%)의 성분원소에 혼합물을 투명석 영관내에 넣고, 1×10^(-6)㎜Hg의 진공에서 봉입하여 합성한 ingot를 사용하여, 수직 Bridgman 방법으로 성장시켰다. 성장된 단결정의 구조는 orthorhombic 구조이며, 광학적 energy band gap 구조는 간접전이형 이였고, energy gap의 온도의존성은 상전이에 관계되는 2개의 변곡점이 나타났으며, 연 속된 영역에서는 Varshni 방정식을 만족하였다. 첨가한 3d 불순물 (V, Cr, Ni)은 모결정의 T_d 대칭을 갖는 주격자점에 +2가 ion으로 위치하며, 이들 ion의 energy 준위간의 전자전이에 의하여 불순물 광흡수 peak 가 나타난다. Single crystals, SbSI : V, SbSel : V, BiSI : V, BiSeI : V, SbSI : Cr, SbSeI: Cr, BiSI : Cr, BiSeI : Cr, SbSI : Ni, SbSeI : Ni, BiSI : Ni, and BiSeI : Ni were grown by the vertical Bridgman method. It is found that the grown single crystals have an orthorhombic structure and the indirect optical transitions. The temperature dependence of energy gap shows the two reflection point related with the phase transitions and is well fitted with Varshni equation in the continuous region. The optical absorption peaks due to the doped impurities (V, Cr, and Ni) are respectively attributed to the electron transitions between the split energy levels of V^(2+), Cr^(2+) and Ni^(2+) ions sited at T_d symmetry of the host lattice.
현승철(Seung-Cheol Hyun),오석균(Seok-Kyun Oh),윤상현(Sang-Hyun Yun),김화택(Wha-Tek Kim),김형곤(Hyung-Gon Kim),최성휴(Sung-Hyu Choe),김창대(Chang-Dae Kim),윤창선(Chang-Sun Yoon),권숙일(Sook-Il Kwun) 한국진공학회(ASCT) 1993 Applied Science and Convergence Technology Vol.2 No.2
SbS_(1-x)Se_xI, BiS_(1-x)Se_xI, Sb_(1-x)Bi_xSI, Sb_(1-x)Bi_xSel, SbS_(1-x)Se_xI : Co, BiS_(1-x)Se_xI : Co, Sb_(1-x)Bi_xSI : Co, 및Sb_(1-x)Bi_xSeI : Co 단결정을 성장시키기 위하여, 투명석영관내에 고순도의 성분원소 혼합물을 넣고 진공봉입하여 iogot를 합성하였다. 합성된 ingot를 사용하여 수직 Bridgman 방법으로 이들 단결정을 성장시켰다. 성장된 단결정의 구조는 orthorhombic 구조이었고, energy band 구조는 간접전이형으로 주어졌으며, 조성 X에 따른 energy gap의 조성의존성은 E_g(x)=E_g(0)-Ax+BX²으로 주어진다. 불순물로 cobalt를 첨가할 때 나타나는 불순물 광흡수 peak는 모결정의 T_d 대칭점을 갖는 격자점에 첨가한 cobalt 가 Co²+, Co³+ ion으로 위치하고, 이들 ion의 energy 준위들 사이의 전자전이에 의해서 나타남을 확인하였다. SbS_(1-x)Se_xI, BiS_(1-x)Se_xI, Sb_(1-x)Bi_xSI, Sb_(1-x)Bi_xSel, SbS_(1-x)Se_xI : Co, BiS_(1-x)Se_xI : Co, Sb_(1-x)Bi_xSI : Co, and Sb_(1-x)Bi_xSeI : Co single crystals were grown by the vertical Bridgman method using the ingots. It has been found that these single crystals have an orthorhombic structure and indirect optical transition. The composition dependences of energy gaps are given by E_g(x)=E_g(0)-Ax+Bx². The impurity optical absorption peaks due to cobalt doped with impurity are attributed to the electron transitions between the split energy levels of Co²+ and Co³+ ions sited at T_d symmetry of the host lattice.