Gastrotomy Approach Retrieval of Esophageal Foreign Body using Long Forceps Technique in Five Dogs

윤헌영,강명곤,정순욱 한국임상수의학회 2009 한국임상수의학회지 Vol.26 No.6

Five dogs presented to the Veterinary Medical Teaching Hospital of the Konkuk University and Hangang Animal Hospital with a history of foreign body ingestion. On physical examination, five dogs showed lethargy, anorexia, or vomiting. Plain radiographs revealed that radiopaque foreign bodies lodged in the heart base or caudal thoracic esophagus. Positive contrast esophagogram revealed that large foreign bodies severely expanded the esophagus and there was no evidence of leakage of the contrast agent from the esophagus into the thoracic cavity. Gastrotomy for retrieval of esophageal foreign bodies using long forceps technique was performed. Esophageal foreign bodies were successfully retrieved in all dogs. The follow-ups were completed 10 days to 2 years after surgery. The follow-up information was based on physical examination by veterinarians and telephone interview with owners. The owners reported that there was no evidence of complications related to surgery such as vomiting, regurgitation, dysphagia, gagging, hyper-salivation, or anorexia in all dogs.

3D NAND Flash Memory의 Remnant Polarization(Pr)과 Saturated Polarization(Ps)에 따른 Retention 특성 분석

이재우,강명곤 한국전기전자학회 2022 전기전자학회논문지 Vol.26 No.2

In this paper, retention characteristics of lateral charge migration according to parameters of 3D NAND flash memory to which ferroelectric (Hf02) structure is applied and L1 v;h were analyzed. The larger the Ps, the greater maximum polarization possible in ferroelectric during programming. Therefore, the initial Vth increases by about 1.04V difference at P, 70µ,C/cm2 than at Ps 25µ,C/cm2. Also, electrons trapped after the program operation causes lateral charge migration over time. Since ferroelectric maintains polarization without applying voltage to the gate after programming, regardless of Ps value, polarization increases as P, increases and the L1 Vth due to lateral charge migration becomes smaller by about 1.54V difference at P, 50µ,C/cm2 than P, 5µ,C/cm2. 본 논문에서는 ferroelectric(Hf02)구조가 적용된 3D NAND flash memory의 parameter에 따른 lateral charge migration 의 retention과 Vt1,를 분석하였다. E가 클수록 program 시 ferroelectric에서 가능한 최대 polarization이 크기 때문에 초기 屈 는 P, 25µC/cm2보다 P, 70µC/cm2에서 약 1.04V차이로 커진다. 또한 Program 이후 trap된 전자는 시간이 지남에 따라서 lateral charge migration이 발생한댜 Program 이후 gate에 전압을 가하지 않고 ferroelectric은 polarization을 유지하기 때 문에 E와 크계 관계없이 R이 클수록 polarization이 커지고 lateral charge migration에 의한 A Vth는 P, 5µC/cm2보다 Pr 50µC/cm2에서 약 1.54V차이로 직아진댜

Surgical Repair of Rostral Hemimandibular Fractures with Canine Tooth Luxation in a Dog

윤헌영,강명곤,정순욱 한국임상수의학회 2009 한국임상수의학회지 Vol.26 No.4

A sexually intact female Alaskan Malamute, 5-year-old weighing 25.2 kg presented to the Hangang Animal Hospital, following hit-by-car. On initial presentation, the dog had severe salivation and the right canine tooth luxation. Radiographs revealed fractures of the right rostral hemimandible with the right canine tooth luxation and symphyseal separation. Surgical repair of fractures was performed by use of an interdental wiring technique and external fixation technique that included pins, an acrylic connecting bar, and polymethyl methacrylate bone cement. Post-operative radiographs revealed that bridging callus was well formed over cortices of the fracture area. Pins and an acrylic connecting bar were removed 7 weeks post-operatively. The dog exhibited evidence of normal mastication.

The Use of Internal Obturator Transposition for Perineal Herniorrhaphy in Three Dogs

윤헌영,강명곤,정순욱 한국임상수의학회 2009 한국임상수의학회지 Vol.26 No.6

Three dogs presented to the Veterinary Medical Teaching Hospital of the University of Konkuk and Hangang Animal Hospital with a history of perineal swelling. No tenesmus, stranguria, or any clinical signs other than the swelling was observed by the owners in three dogs. On physical examination, the swelling was observed unilaterally in two dogs and bilaterally in a dog. Digital palpation to the swelling confirmed reducible perineal herniation in two dogs and irreducible perineal herniation in a dog. Plain radiographs revealed that no pelvic or abdominal contents other than the fat were displaced into subcutaneous perineal region in three dogs. Internal obturator transposition herniorrhaphy was performed for correction of perineal herniation in three dogs. Contralateral herniation involving fat was noted after surgery in a dog. The follow-up information was based on physical examination by veterinarians or telephone interview with owners. The owners reported that there was no evidence of complications related to surgery such as sciatic nerve injury, rectal prolapse, wound dehiscence, or perineal hernia recurrence in all dogs.

High Quality Vertical Silicon Channel by Laser-Induced Epitaxial Growth for Nanoscale Memory Integration

손용훈,백승재,강명곤,왕기현,윤의준 대한전자공학회 2014 Journal of semiconductor technology and science Vol.14 No.2

As a versatile processing method for nanoscale memory integration, laser-induced epitaxial growth is proposed for the fabrication of vertical Si channel (VSC) transistor. The fabricated VSC transistor with 80 nm gate length and 130 nm pillar diameter exhibited field effect mobility of 300 cm2/Vs, which guarantees “device quality”. In addition, we have shown that this VSC transistor provides memory operations with a memory window of 700 mV, and moreover, the memory window further increases by employing charge trap dielectrics in our VSC transistor. Our proposed processing method and device structure would provide a promising route for the further scaling of state-of-the-art memory technology.

"3D NAND Flash Memory에서 Tapering된 O/N/O 및 O/N/F 구조의 Threshold Voltage 변화 분석"

이지환,이재우,강명곤 한국전기전자학회 2024 전기전자학회논문지 Vol.28 No.1

"본 논문은 3D NAND Flash memory에서 tapering된 O/N/O(Oxide/Nitride/Oxide) 구조와 blocking oxide를 ferroelectric material로 대체한 O/N/F(Oxide/Nitride/Ferroelectric) 구조의 Vth(Threshold Voltage) 변화량을 분석했다. Tapering 각도가0°일 때 O/N/F 구조는 O/N/O 구조보다 저항이 작고 WL(Word-Line) 상부와 WL 하부의 Vth 변화량이 감소한다. Tapering된3D NAND Flash memory는 WL 상부에서 WL 하부로 내려갈수록 channel 면적이 감소하며 channel 저항이 증가한다. 따라서tapering 각도가 증가할수록 WL 상부의 Vth가 감소하고 WL 하부의 Vth는 증가한다. Tapering된 O/N/F 구조는 channel 반지름길이와 비례하는 Vfe로 인해 WL 상부의 Vth는 O/N/O 구조보다 더 감소한다. 또한 O/N/F 구조의 WL 하부는 O/N/O 구조보다Vth가 증가하기 때문에 tapering 각도에 따른 Vth 변화량이 O/N/O 구조보다 더 증가한다." "This paper analyzed the Vth (Threshold Voltage) variations in 3D NAND Flash memory with tapered O/N/O (Oxide/Nitride/Oxide) structure and O/N/F (Oxide/Nitride/Ferroelectric) structure, where the blocking oxide is replaced by ferroelectric material. With a tapering angle of 0°, the O/N/F structure exhibits lower resistance compared to the O/N/O structure, resulting in reduced Vth variations in both the upper and lower regions of the WL (Word Line). Tapered 3D NAND Flash memory shows a decrease in channel area and an increase in channel resistance as it moves from the upper to the lower WL. Consequently, as the tapering angle increases, the Vth decreases in the upper WL and increases in the lower WL. The tapered O/N/F structure, influenced by Vfe proportional to the channel radius, leads to a greater reduction in Vth in the upper WL compared to the O/N/O structure. Additionally, the lower WL in the O/N/F structure experiences a greater increase in Vth compared to the O/N/O structure, resulting in larger Vth variations with increasing tapering angles."

3 nm Node Nanoplate-FET에서 Self-heating Effect의 완화 방법

김현우,전종욱,강명곤,신형철 대한전자공학회 2020 전자공학회논문지 Vol.57 No.2

반도체 소자가 점점 미세해지고 작아지면서 단위 면적당 발열이 증가하고 있다. 그리고 최근에 사용되기 시작한 high-k material은 열 전도율이 낮아 발열을 더 악화시키고 앞으로 사용될 GAA 구조 또한 열 방출을 더 어렵게 만든다. 따라서 본 연구에서는 차세대 구조로 주목받는 GAA 구조중 하나인 Nanoplate-FET에 대해 Spacer 구조별 self-heating Effect가 어떻게 바뀌는지 비교하였다. Dual-k Spacer, Air Sapcer 구조는 소자의 전기적 특성을 개선하기 위해 사용되지만 소자의 열적 특성을 악화시킨다. 전기적으로 우수한 성능을 보이지만 잘 알려지지 않은 Corner Spacer가 이러한 문제를 해결할 수 있는 방안이 될 수 있음을 확인하였으며 Corner Spacer에서 열적으로 중요한 특성을 보이는 구조를 확인하였다. 또한 Asymmetric 구조를 통해 열적 특성을 개선할 수 있음을 확인하였다. As the semiconductor device becomes finer and smaller, the heat density per unit area is increasing. And the recently used high-k material has a low thermal conductivity which makes the heat worse and the GAA structure to be used also makes the heat release more difficult. In this study, we compared how the self-heating effect of the spacer structure changes with respect to the Nanoplate-FET, which is one of the next-generation GAA structures. The Dual-k Spacer and Air Sapcer structures are used to improve the electrical characteristics of the device, but deteriorate the thermal properties of the device. It is confirmed that Corner Spacer which has excellent electrical performance but is not well known can be a way to solve this problem, and the structure showing thermally important characteristics is confirmed in Corner Spacer. It is also confirmed that the asymmetric structure can improve the thermal properties.

유기 전계 효과 트랜지스터 및 고전압 논리 회로 동작을 위한 Quinacridone-quinoxaline(PQCQx) 기반 공중 합체에 대한 연구

김태양,안태규,강명곤,송호준 한국공업화학회 2018 한국공업화학회 연구논문 초록집 Vol.2018 No.0

유기반도체는 플렉시블하며 대면적화 공정이 가능하고 이를 이용한 유기전계트랜지스터(OFET)의 전기적 성능이 향상되면서 대면적의 플렉시블 디스플레이 같은 실용적인 분야에 적용을 할 수 있다. 현재 개발 된 고분자 반도체 중에서 quinacridone(QC) 유닛 기반의 고분자는 구조가 일정하고 분자 자체 자기 조립이 가능하기 때문에 OFET와 같은 고분자 반도체로 주목 받고 있다. 우리는 Quinacridone와 Quinoxaline(Qx)의 공중합체인 PQCQx 고분자를 이용하여 유기전계트랜지스터를 제작하고 단위 소자의 특성을 측정하였고 이를 바탕으로 효과적인 OFET를 제작하였으며, 애플리케이션의 실현 가능성을 보여준다. 우리는 이것을 AFM, XRD를 통하여 확인하였다.

3D NAND Flash Memory에 Ferroelectric Material을사용한 Current Path 개선

이지환,이재우,강명곤 한국전기전자학회 2023 전기전자학회논문지 Vol.27 No.4

In this paper, we analyzed the current path in the O/N/O (Oxide/Nitride/Oxide) structure of 3D NAND Flashmemory and in the O/N/F (Oxide/Nitride/Ferroelectric) structure where the blocking oxide is replaced by aferroelectric. In the O/N/O structure, when Vread is applied, a current path is formed on the backside of thechannel due to the E-fields of neighboring cells. In contrast, the O/N/F structure exhibits a current path formedon the front side due to the polarization of the ferroelectric material, causing electrons to move toward thechannel front. Additionally, we performed an examination of device characteristics considering channel thicknessand channel length. The analysis results showed that the front electron current density in the O/N/F structureincreased by 2.8 times compared to the O/N/O structure, and the front electron current density ratio of the O/N/Fstructure was 17.7% higher. Therefore, the front current path is formed more effectively in the O/N/F structurethan in the O/N/O structure. 본 논문에서는 3D NAND Flash memory의 O/N/O(Oxide/Nitride/Oxide) 구조와 blocking oxide를 ferroelectric material로 대체한 O/N/F(Oxide/Nitride/Ferroelectric) 구조의 current path를 분석했다. O/N/O 구조는 Vread가 인가되면 neighboringcell의 E-field로 인해 current path가 channel 후면에 형성된다. 반면 O/N/F 구조는 ferroelectric material의 polarization으로 인해 electron이 channel 전면으로 이동하여 current path가 전면에 형성된다. 또한 channel thickness와 channel length에 따른 소자 특성을 분석했다. 분석 결과 O/N/F 구조의 전면 electron current density 증가는 O/N/O 구조보다 2.8배 더 높았고 O/N/F 구조의 전면 electron current density 비율이 17.7% 높았다. 따라서 O/N/O 구조보다 O/N/F 구조에서 전면current path가 더 효과적으로 형성된다.

3D NAND Charge Trap Flash using Ferroelectric (CTF-F) 구조에서 Program disturbance 분석

김범수(Beomsu Kim),강명곤(Myounggon Kang) 대한전자공학회 2021 대한전자공학회 학술대회 Vol.2021 No.11