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DP강의 디프드로잉 시 집합조직 발달과 이방성 거동 시뮬레이션
송영식 ( Young Sik Song ),김대완 ( Dae Wan Kim ),양회석 ( Hoe Seok Yang ),한성호 ( Sung Ho Han ),진광근 ( Kwang Gun Chin ),최시훈 ( Shi Hoon Choi ) 대한금속재료학회 ( 구 대한금속학회 ) 2009 대한금속·재료학회지 Vol.47 No.5
To investigate the evolution of deformation texture in dual phase (DP) steels during deep-drawing deformation, deep-drawing experiments were performed. Microtexture measurements were conducted using electron backscattered diffraction (EBSD) to analyze texture evolution. A rate-sensitive polycrystal model was used to predict texture evolution during deep-drawing deformation. In order to evaluate the strain path during deep-drawing deformation, a steady state was assumed in the flange part of a deep-drawn cup. A rate-sensitive polycrystal model successfully predicted the texture evolution in DP steels during deep-drawing deformation. The final stable orientations were found to be strongly dependent on the initial location in the blank. Texture analysis revealed that the deep drawability of DP steels decreases as the true strain in the radial direction of the deep-drawn cup increases during deep-drawing deformation. (Received December 31, 2008)
송영식(Young Sik Song) 대한공업교육학회 1992 대한공업교육학회지 Vol.17 No.2
Vocational education, especially technical education, which was stagnant in the 1980s, will be activated. The factors which decide the result of schooling are various and complicated, but nobody will deny that the qualities of teachers are one of the most important factors. In other word, training and proper supply of technical teachers is essential for the improvement of technical education, and we are also able to reform the educational system of high schools through it. This paper surveys the system and present condition of technical teacher training. Some questions concerning technical teacher training, in connection with the reform of educational system of high school level, are summarized as follows. 1) Which institution will take charge of the training of technical teachers? 2) How to train competent teachers who are able to carry out the education connected with the industrial scene? 3) How to train and supply teachers necessary for new technical subjects? 4) How to train and make use of teachers with the ability of specialized technical training?
단일 복합 타겟으로 스퍼터 코팅된 CIGS 박막의 형성과 열처리에 따른 미세구조 변화
송영식(Young Sik Song),김종렬(Jongryoul Kim) 한국표면공학회 2013 한국표면공학회지 Vol.46 No.2
Thin film solar cells have attracted much attention due to their high cell efficiency, comparatively low process cost, and applicability to flexible substrates. In particular, CIGS solar cells have been widely studied and produced because they demonstrated the highest cell efficiency. However, the deposition process of CIGS films generally includes the selenization process conducted at elevated temperature using toxic H2Se gas. To avoid this selenization process, CIGS thin films were, in this study, deposited by RF sputtering using single composite CIGS target. In addition, the effects of sputtering bias voltage and heat treatment on the microstructural and morphological changes in deposited CIGS films were investigated and discussed.
Al-1% Si층과 Ti-silicide층의 반응에 관한 연구
황유상,백수현,송영식,조현춘,최진석,정재경,김영남,심태언,이종길,이상인,Hwang, Yoo-Sang,Paek, Su-Hyon,Song, Young-Sik,Cho, Hyun-Choon,Choi, Jin-Seog,Jung, Jae-Kyoung,Kim, Young-Nam,Sim, Tae-Un,Lee, Jong-Gil,Lee, Sang-In 한국재료학회 1992 한국재료학회지 Vol.2 No.6
Single-Si 기판과 poly-Si 기판에 각각 Ti을 sputter한 후 RTA 처리하여 안정한 TiS$i_2$를 형성하였다. 그 위에 Si이 1% 첨가된 Al-1% Si을 600nm sputter한 후 후속 열처리로서 400-60$0^{\circ}C$ 에서 30분간 $N_2$분위기로 furnace어닐링을 실시하였다. 이렇게 준비된 각 시편에 대하여 면저항 측정, Auger분석, SEM 사진으로 Al-1% Si/TiS$i_2$이중층 구조에서 Ti-silicide의 열적 안정성을 살펴 보았고, EDS 분석과 X-ray 회절 peak 분석을 통하여 Al-1% Si 층과 TiS$i_2$층의 반응으로 생긴 석출물의 성분과 상을 조사하였다. 이로 부터 다음과 같은 결과를 얻었다 Single-Si 기관에서 형성한 TiS$i_2$층은 Al-1% Si 층과 55$0^{\circ}C$에서 완전히 반응하여 석출물을 형성하였고, poly-Si 기판에서 형성한 TiS$i_2$층은 Al-1% Si 층과 50$0^{\circ}C$에서 완전히 반응하여 석출물을 형성하였는데 전반적으로 기판이 poly-Si인 경우가 반응이 더 잘 일어났고, 석출물의 크기도 비교적 컸다. 이는 poly-Si에 존재하는 grain boundary로 인해 poly-Si에서 형성된 Ti-silicide 층이single-Si 기관에서 형성된 Ti-silicide 층보다 불안정하기 때문으로 생각된다. EDS 분석에 의하여 석출물은 Ti, Al, 그리고 Si로 이루어진 3상 화합물이라고 추정되었고, X-ray회절 분석에 의해 석출물은 Ti, Al, 그리고 Si간의 3상 화합물인 T$i_7$A$l_5$S$i_12$로 확인되었다. Stable TiS$i_2$was formed by RTA on single-Si and on poly-Si. Subsequently, an Al-1% Si layer with 600-nm thick was deposited on top of the TiS$i_2$, Finally, the specimens were annealed for 30min at 400-60$0^{\circ}C$in $N_2$ambient. The thermal stability of Al-1% Si/TiS$i_2$bilayer and interfacial reaction were investigated by measuring sheet resistance, Auger electron spectroscopy (AES), and scanning electron microscopy (SEM). The composition and phase of precipitates formed by the reaction of Al-1% Si with Ti-silicide were studied by energy dispersive spectroscopy (EDS), X-ray diffraction (XRD). In the case of single-Si substrate the reaction of Al-1% Si layer with TiS$i_2$layer resulted in precipitates, consuming all TiS$i_2$layer at 55$0^{\circ}C$. On the other hand, the disappearance of TiS$i_2$on poly-Si occurred at 50$0^{\circ}C$ and more precipitates were formed by the reaction of Al-1% Si/TiS$i_2$on potty-Si substrate than those of the reaction on single-Si substrate. This phenomenon resulted from the fact that Ti-silicide formed on poly-Si was more unstable than on single-Si by the effect of grain boundary. By EDS analysis the precipitates were found tobe composed of Ti, Al, and Si. X-ray diffraction showed the phase of precipitates to be theT$i_7$A$l_5$S$i_12$ternary compound.
Composite Target으로 증착된 Ti-silicide의 현성에 관한 연구[II]
최진석,백수현,송영식,심태언,이종길,Choi, Jin-Seog,Paek, Su-Hyon,Song, Young-Sik,Sim, Tae-Un,Lee, Jong-Gil 한국재료학회 1991 한국재료학회지 Vol.1 No.4
Composite $TiSi_{2.6}$ target으로 부터 Ti-silicide를 형성시 단결정 Si기판과 다결정 Si내의 dopant의 확산 거동, 그리고 Ti-silicide 박막의 표면 거칠기를 secondary ion mass spectrometry (SIMS), 4-point probe, X-선 회절 분석, 표면 거칠기 측정을 통해 조사하였다. X-선 회절 분석결과 중착된 직후의 중착막은 비정질이었고, 단결정 Si기판에 증착된 막은 $800^{\circ}C$에서 20초간 급속 열처리 시 orthorhombic $TiSi_2$(C54 구조)로 결정화가 이루어졌다. 단결정 Si 기판과 다결정 Si에서 Ti-silicide 충으로의 dopant의내부 확산은 거의 발생하지 않았으며, 주입된 불순물들은 Ti-silicide/Si 계면 근처의 단결정 Si이나 다결정 Si 내부에 존재하고 있었다. 또한 형성된 Ti-silicide 박막의 표면 거칠기는 16-22nm이었다. The surface roughnesses of titanium silicide films and the diffusion behaviours of dopants in single crystal and polycrystalline silicon substrates durng titanium silicide formation by rapid thermal annealing(RTA) of sputter deposited Ti-filicide film from the composite $TiSi_{2.6}$ target were investigated by the secondary ion mass spectrometry(SIMS), a four-point probe, X-ray diffraction, and surface roughness measurements. The as-deposited films were amorphous but film prepared on single silicon substrate crystallized to the orthorhombic $TiSi_2$(C54 structure) upon rapid thermal annealing(RTA) at $800^{\circ}C$ for 20sec. There was no significant out-diffusion of dopants from both single crystal and polycrystalline silicon substrate into titanum silicide layers during annealing. Most of the implanted dopants piled up near the titanium silicide/silicon interface. The surface roughnesses of titanium silicide films were in the range between 16 and 22nm.