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변기량,강정원,이준하,권오근,황호정 한국전기전자재료학회 2003 전기전자재료학회논문지 Vol.16 No.12
The responses of hypothetical silicon nanotubes under torsion have been investigated using an atomistic simulation based on the Tersoff potential. A torque, proportional to the deformation within Hooke's law, resulted in the ribbon-like flattened shapes and eventually led to a breaking of hypothetical silicon nanotubes. Each shape change of hypothetical silicon nanotubcs corresponded to an abrupt energy change and a singularity in the strain energy curve as a function of the external tangential force, torque, or twisted angle. The dynamics o silicon nanotubes under torsion can be modelled in the continuum elasticity theory.
변기량,강정원,송기오,최원영,황호정 한국전기전자재료학회 2004 전기전자재료학회논문지 Vol.17 No.3
We investigated structural phases of potassium intercalated into carbon nanotubes using a structural optimization process applied to atomistic simulation methods. As the radius of carbon nanotubes increased, structures were found in various phases from an atomistic strand to multishell packs composed of coaxial cylindrical shells and in helical, layed, and crystalline structures. Numbers of helical atom rows composed of coaxial tubes and orthogonal vectors of a circular rolling of a triangular network could explain multishell phases of potassium in carbon nanotubes.
卞起良,황호정 대한전자공학회 2002 電子工學會論文誌-SD (Semiconductor and devices) Vol.39 No.1
In this paper, new simple method for the calculation of depletion region under complex geometry and general purpose numerical simulator that could handle this were developed and applied in the analysis of SCM with nanoscale tip, which is a promising tool for high resolution dopant profiling. Our simple depletion region seeking algorithm alternatively switches material of elements to align ionized element boundary with contour of zero potential. To prove the validity of our method we examined whether our results satisfy the definition of depletion region and compared those with known values of pn junction and MOS structure. By modeling of capacitance based on the shape of depletion region and potential distribution, we could calculate the CV curve and dC/dV curve between silicon substrate and nanoscale SCM tip. 본 논문에서는 나노영역의 고해상도 도핑 농도 측정 장비 개발을 위해 공핍 근사 조건하에 복잡한 계산영역에서 공핍 영역을 간단히 계산할 수 있는 방법을 개발하였다. 개발된 공핍 영역 계산 방법은 유한요소법을 이용한 적응분할 포아송 방정식 해석기를 사용하여 대전된 영역의 경계에서 전위가 0인 등고선과 일치하도록 하여 계산하는 방법이다. 이 방법의 타당성을 검증하기 위해 계산된 대전영역 및 전위분포가 공핍 영역의 정의에 맞는지 확인하였으며, pn 접합에서의 공핍영역 깊이 및 MOS 구조에서 정전용량을 계산하여 비교해 본 결과 이론치와 정확히 일치함을 알 수 있었다. 이러한 pn접합 및 MOS 에서 공핍영역 계산 검증을 바탕으로 나노영역의 탐침을 장착한 SCM에서 전압에 따른 실리콘 내의 공핍영역 모양과 전위를 분석하여, 정전용량 모델링을 하였으며, 이로부터 CV 곡선과 SCM의 출력인 dC/dV 곡선을 계산하였다.
변기량,강정원,이준하,권오근,황호정 한국전기전자재료학회 2003 전기전자재료학회논문지 Vol.16 No.12S
The responses of hypothetical silicon nanotubes under torsion have been investigated using an atomistic simulation based on the Tersoff potential. A torque, proportional to the deformation within Hooke's law, resulted in the ribbon-like flattened shapes and eventually led to a breaking of hypothetical silicon nanotubes. Each shape change of hypothetical silicon nanotubes corresponded to an abrupt energy change and a singularity in the strain energy curve as a function of the external tangential force, torque, or twisted angle. The dynamics of silicon nanotubes under torsion can be modelled in the continuum elasticity theory.
변기량,강정원,이준하,권오근,황호정 한국전기전자재료학회 2004 전기전자재료학회논문지 Vol.17 No.2
We have investigated the structures, the energetic, and the nanomechanics of the single-wall boron-, aluminum-, and gallium-nitride nanotubes using atomistic simulations based on the Tersoff-type potential. The Tersoff-type potential for the III-nitride materials has effectively described the properties of the III-nitride nanotubes. Nanomechanics of boron-, aluminum-, and gallium-nitride nanotubes under the compression loading has been investigated and their Young's moduli were calculated.
Chemical Mechanical Polishing 공정에 관한 원자단위 반응 모델링
변기량,강정원,송기오,황호정,Byun, Ki-Ryang,Kang, Jeong-Won,Song, Ki-Oh,Hwang, Ho-Jung 한국전기전자재료학회 2005 전기전자재료학회논문지 Vol.18 No.5
This paper shows the results of atomistic modeling for the Interaction between spherical nano abrasive and substrate In chemical mechanical polishing processes. Atomistic modeling was achieved from 2-dimensional molecular dynamics simulations using the Lennard-jones 12-6 potentials. We proposed and investigated three mechanical models: (1) Constant Force Model; (2) Constant Depth Model, (3) Variable Force Model, and three chemical models, such as (1) Chemically Reactive Surface Model, (2) Chemically Passivating Surface Model, and (3) Chemically Passivating-reactive Surface Model. From the results obtained from classical molecular dynamics simulations for these models, we concluded that atomistic chemical mechanical polishing model based on both Variable Force Model and Chemically Passivating-reactive Surface Model were the most suitable for realistic simulation of chemical mechanical polishing in the atomic scale. The proposed model can be extended to investigate the 3-dimensional chemical mechanical polishing processes in the atomic scale.
질화붕소 나노피포드에 기반한 나노분자 메모리 시스템에 관한 연구
변기량(Ki Ryang Byun),강정원(Jeong Won Kang),최원영(Won Young Choi),황호정(Ho Jung Hwang) 한국진공학회(ASCT) 2005 Applied Science and Convergence Technology Vol.14 No.1
분자 위치제어 메모리 시스템에 대하여 고전적인 분자동역학을 이용하여 결합에너지 및 다양한 외부전기장의 형태에 따른 셔틀 풀러렌 동작에 관하여 연구하였다. 단일 나노피포드 형(single-nanopeapod type)은 질화붕소 나노튜브(boron-nitride nanotube) 속에 세 개의 엔도풀러렌(endo-fullerene)과 양쪽 끝에 구리 전극이 채워져 있는 구조를 갖고 있는 구조를 갖고 있다. 결론적으로, 분자동역학 시뮬레이션 결과로부터 이 나노메모리 시스템은 비휘발성임을 알 수 있었다. 안정적인 bit 변화를 위해서는 단일 나노피포드 형은 0.1eV/Å 외부전기장이 필요로 함을 알 수 있었다. Bucky shuttle memory systems were investigated by the classical molecular dynamics(MD) simulations. Energetics and operating response of the shuttle-memory-elements were examined by MD simulations of the C_(60) shuttle in the nanomemory systems under various external force fields. Single-nanopeapod type was consisting of three fullerenes encapsulated in (l0, 10) boron-nitride nanotube and filled Cu electrode. Studied systems could be applied to nonvolatile memory. MD simulation results showed that the stable bit flops could be achieved from the external force fields of 0.1 eV/Å for single-nanopeapod type.