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( Nguyen Van Nga ),정수란,전솔민,권영환 한국공업화학회 2019 한국공업화학회 연구논문 초록집 Vol.2019 No.1
In this study, the poly[N-(2-ethylhexyl)-3,6-carbazole-alt-aniline] (PI) and poly{bis-[6-bromo-N-(2-ethylhexyl)-carbazole-3-yl]-alt-aniline} (PII) with different molecular weight (Mw) were synthesized and used as new hole transport materials (HTM) in the solid-state dye-sensitized solar cell (ssDSSC) and their Mw effect on performance of the device will also be studied. The polymers were synthesized and fractionated to separate high Mw of 6,780g/mol, 17,413g/mol and low Mw of 1,786g/mol, 2,238g/mol for PI and PII. The polymers showed good thermal stability (450°C), depth HOMO (5.0 eV). The effect of Mw was investigated by using different Mw of polymers and applying into ssDSSC, the high Mw shows the performance about 0.4% and 0.01% for PI and PII while the low Mw shows 1.5% and 0.05% of the performance of PI and PII. Success in synthesized PI and PII by Pd-catalyzed polycondensation method and applied into ssDSSC as HTM. The polymers show as a promising candidate for ssDSSC.
Van Duy, Nguyen,Jung, Sungwook,Nga, Nguyen Thanh,Son, Dang Ngoc,Cho, Jaehyun,Lee, Sunhwa,Lee, Wonbaek,Yi, Junsin Elsevier 2010 Materials science and engineering B. Advanced Func Vol.175 No.2
<P><B>Abstract</B></P><P>Beside silicon nitride, silicon rich SiO<SUB><I>x</I></SUB> is a good charge storage material for the charge trap type of nonvolatile memory due to the high density of the charge traps. In this study, the charge storage ability of various amorphous SiO<SUB><I>x</I></SUB> materials has been investigated. By controlling the ratio of N<SUB>2</SUB>O/SiH<SUB>4</SUB> gases from a 1:6 to a 2:1 input gas flow rate, the deposited SiO<SUB><I>x</I></SUB> bandgap changed from 2.3 to 3.9eV. The charge storage properties of the SiO<SUB><I>x</I></SUB> system were studied on metal–insulator–semiconductor structures with an insulator stack of SiO<SUB>2</SUB>/SiO<SUB><I>x</I></SUB>/SiO<SUB><I>x</I></SUB>N<SUB><I>y</I></SUB> on an n-type silicon wafer. In this structure, the SiO<SUB>2</SUB> was used for the blocking layer and the SiO<SUB><I>x</I></SUB>N<SUB><I>y</I></SUB> was used for the tunneling layer. By analyzing the FTIR and the photoluminescence spectra, it is shown that the richest silicon material incorporates numerous non-bridging oxygen hole-center (NBOHC) defect sources and a rich silicon phase in the base material. These defects, as well as the amorphous silicon clusters that exist in the SiO<SUB><I>x</I></SUB> layer, enhanced the charge storage capacity of the device compared to the oxygen rich SiO<SUB><I>x</I></SUB> cases. The retention property was optimized by surveying the tunneling thickness of the 2.3, 2.6, 2.9, and 3.2nm SiO<SUB><I>x</I></SUB>N<SUB><I>y</I></SUB> layers.</P>
Van Duy, Nguyen,Jung, Sungwook,Kim, Kwangryul,Son, Dang Ngoc,Nga, Nguyen Thanh,Cho, Jaehyun,Choi, Byoungdeog,Yi, Junsin Institute of Physics [etc.] 2010 Journal of physics. D, applied physics Vol.43 No.7
<P>Silicon-rich SiO<SUB><I>x</I></SUB> material is a good charge storage candidate for memory applications that promise a large memory window and low operation voltage. Nonvolatile memory (NVM) devices fabricated on excimer laser-annealed polysilicon using SiO<SUB>2</SUB>/SiO<SUB><I>x</I></SUB>/SiO<SUB><I>x</I></SUB>N<SUB><I>y</I></SUB> (OOxOn) structure are investigated with SiO<SUB>2</SUB> blocking thicknesses changing from 15 to 20 to 30 nm. The Si-rich SiO<SUB><I>x</I></SUB> material exposed numerous non-bridging oxygen hole-centre defect sources and a rich silicon phase in the base material. These defects, as well as amorphous silicon clusters existing in the SiO<SUB><I>x</I></SUB> layer, enhance the charge storage capacity of the device. Retention properties were ensured by 3.2 nm SiO<SUB><I>x</I></SUB>N<SUB><I>y</I></SUB> tunnelling layer growth via N<SUB>2</SUB>O plasma-assisted oxynitridation. NVM characteristics showed a retention exceeding 85% of the threshold voltage shift after 10<SUP>4</SUP> s and greater than 70% after 10 years. Depending on the blocking thickness of 15, 20 or 30 nm, operating voltages varied from ±9 to ±13 V at a programming/erasing duration of only 1 ms. These excellent operating properties of the OOxOn structure make it a potential competitor among the new generation of memory structures on glass.</P>
Nguyen Tuan Anh,Nguyen Anh Tuan,Nguyen Tuyet Nga,Nguyen Anh Tue,Giap Van Cuong 한국물리학회 2014 Current Applied Physics Vol.14 No.10
Double-barrier magnetic tunnel junctions (DBMTJs) were prepared from Co(75 nm)/Al2O3(2.3 nm)/ Co(5 nm)/Al2O3(2.3 nm)/Co(50 nm) sputtering pentalayer films. The ac electrical properties of asdeposited DBMTJs and those annealed in a vacuum at 100e350 C for 30 min were then investigated using a complex impedance spectroscopic technique. The ac impedance responses as a function of annealing temperature were further analyzed based on Maxwell's layered dielectric barrier and Maxwell eWagner capacitor models after considering the DBMTJs as having double-capacitor-type structures. The effect of thermal annealing on the ac transport behavior of the DBMTJs was interpreted by examining the equivalent electric circuits fitted to Nyquist plots of each different sample. The effects were found to be due to changes in the structural characteristics in both bulk and interface morphologies of Co and Al2O3 layers. The structural morphology determined the different ac transport modes that occurred in the DBMTJs.
Genome-wide transcriptome comparison of flag leaves among japonica and indica varieties
Van Ngoc Tuyet Nguyen,문선옥,고현정,Quynh Nga Nguyen,윤보선,김백기,고희종,정기홍 한국식물학회 2015 Journal of Plant Biology Vol.58 No.5
Flag leaves in crops are one of the key organs determining grain yield, which significantly affects total yield. However, our understanding of the molecular and genetic regulation of flag leaves is very limited. To provide a genome-wide view of gene expression in flag leaves associated with grain yield, we compared the flag leaves of rice varieties with different yield potentials, such as Hwacheong (moderate yield), Milyang23 (high yield), Dasan (high yield), and IR64 (high yield), using an Agilent 8x60K microarray. As a result, we identified 245 genes that were up-regulated in high yield potential varieties compared to Hwacheong, along with 293 genes that were up-regulated in Hwacheong. GO enrichment analysis of the selected candidate genes revealed that the thiamin biosynthetic process and the sucrose metabolic process were the most enriched terms in flag leaves from the high yield potential varieties, while phosphate transport and the chitin catabolic process terms were the most significant in flag leaves of Hwacheong. In addition, MapMan analysis suggested that the biotic stress response and auxin signaling are important in Hwacheong, while the heat stress response, calcium and G-protein signaling are necessary in other high yield potential varieties. The functions of 11 of our candidate genes have been previously characterized in genetic and molecular biological studies and most of them are related to tolerance against environmental challenges or yield, thereby indicating the potential significance of our candidate genes in further applications.
Nguyen, Tuan Lam,Pham, Thi Quynh Nga,Hoang, Van Minh,Kim, Bao Giang,Phan, Thi Hai,Doan, Thu Huyen,Nguyen, Thuy Linh,Duong, Khanh Van,Luong, Ngoc Khue Asian Pacific Journal of Cancer Prevention 2016 Asian Pacific journal of cancer prevention Vol.17 No.no.sup1
Second-hand tobacco smoke (SHS) exposure at home, especially among children, is a serious issue in Viet Nam. During the past decade, much effort has been taken for tobacco control in the country, including various prgorammes aiming to reduce SHS exposure among adults and children. This article analysed trends and factors associated with SHS exposure at home among school children aged 13-15 in Viet Nam, using the Global Youth Tobacco Surveys conducted in 2007 and 2014. Descriptive and inferential statistical methods with logistic regression were applied. Overall, there was a significant reduction in the level of exposure, from 58.5% (95%CI: 57.6-59.3) in 2007 to 47.1% (95%CI: 45.4-48.8) in 2014. Of the associated factors, having one or both parents smoking was significantly associated with the highest odds of SHS exposure at home (OR=5.0; 95%CI: 4.2-6.1). Conversely, having a mother with a college or higher education level was found to be a protective factor (OR=0.5; 95%CI: 0.3-0.8).
Advanced Magnetic Materials Produced by Using Rapid Quenching Technology
Nguyen Hoang Nghi,Nguyen Van Dung,Trinh Thi Thanh Nga,Bui Thi Khanh Nhung,Mai Thanh Tung,Nguyen Huu Tinh,Hoang Nhat Hieu,Bui Xuan Chien,Nguyen Thi Hong Tam 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.52 No.6
Amorphous alloys produced by using a rapid quenching technique are considered to be a precursor for producing nanosized and multiphase structures by precipitation (the top-down method). By using this technique, several new magnetic materials with different magnetic properties based on different physical mechanisms have been manufactured and investigated. Three new magnetic materials, a nanocrystalline soft magnetic material, a soft-hard permanent magnet and a Me-3d granular alloy with a GMR effect, what were prepared under local conditions, are presented and discussed in the experimental point of view. Amorphous alloys produced by using a rapid quenching technique are considered to be a precursor for producing nanosized and multiphase structures by precipitation (the top-down method). By using this technique, several new magnetic materials with different magnetic properties based on different physical mechanisms have been manufactured and investigated. Three new magnetic materials, a nanocrystalline soft magnetic material, a soft-hard permanent magnet and a Me-3d granular alloy with a GMR effect, what were prepared under local conditions, are presented and discussed in the experimental point of view.
Memory characteristics of poly-Si using MIC as an active layer on glass substrates
Nguyen, Thanh Nga,Jung, Sungwook,Nguyen, Van Duy,Yi, Junsin Institute of Physics [etc.] 2010 Journal of Physics. D, Applied Physics Vol.43 No.10
<P>In this paper the electrical properties of nonvolatile memory (NVM) using multi-stack gate insulators of oxide–nitride–oxynitride (ONOn) and an active layer of low temperature polycrystalline silicon (LTPS) were investigated. From hydrogenated amorphous silicon (a-Si : H), the LTPS thin film with a high crystalline fraction of 96% and a low surface roughness of 1.28 nm was fabricated by metal induced crystallization (MIC) with annealing conditions of 650 °C for 5 h on glass substrates. The LTPS thin film transistor or the NVM had a field effect mobility of (μ<SUB>FE</SUB>) 10 cm<SUP>2</SUP> V<SUP>−1</SUP> s<SUP>−1</SUP> and a threshold voltage (<I>V</I><SUB>TH</SUB>) of −3.5 V. The results demonstrated that the NVM had a memory window of 1.6 V with a programming and erasing (P/E) voltage of −14 V and 14 V in 1 ms. Moreover, retention properties of the memory were shown to exceed 80% after 10 years. Therefore, the LTPS fabricated by MIC has become a potential material for NVM application which is employed for the system integration of panel displays.</P>