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Yoon, Younggun,Chung, Hay Jung,Wen Di, Doris Yoong,Dodd, Michael C.,Hur, Hor-Gil,Lee, Yunho Pergamon Press 2017 Water research Vol.123 No.-
<P><B>Abstract</B></P> <P>This study assessed the inactivation efficiency of plasmid-encoded antibiotic resistance genes (ARGs) both in extracellular form (e-ARG) and present within <I>Escherichia coli</I> (intracellular form, i-ARG) during water treatment with chlorine, UV (254 nm), and UV/H<SUB>2</SUB>O<SUB>2</SUB>. A quantitative real-time PCR (qPCR) method was used to quantify the ARG damage to <I>amp</I> <SUP> <I>R</I> </SUP> (850 bp) and <I>kan</I> <SUP> <I>R</I> </SUP> (806 bp) amplicons, both of which are located in the pUC4K plasmid. The plate count and flow cytometry methods were also used to determine the bacterial inactivation parameters, such as culturability and membrane damage, respectively. In the first part of the study, the kinetics of <I>E. coli</I> inactivation and ARG damage were determined in phosphate buffered solutions. The ARG damage occurred much more slowly than <I>E. coli</I> inactivation in all cases. To achieve 4-log reduction of ARG concentration at pH 7, the required chlorine exposure and UV fluence were 33–72 (mg × min)/L for chlorine and 50–130 mJ/cm<SUP>2</SUP> for UV and UV/H<SUB>2</SUB>O<SUB>2</SUB>. After increasing pH from 7 to 8, the rates of ARG damage decreased for chlorine, while they did not vary for UV and UV/H<SUB>2</SUB>O<SUB>2</SUB>. The i-ARGs mostly showed lower rates of damage compared to the e-ARGs due to the protective roles of cellular components against oxidants and UV. The contribution of OH radicals to i-ARG damage was negligible in UV/H<SUB>2</SUB>O<SUB>2</SUB> due to significant OH radical scavenging by cellular components. In all cases, the ARG damage rates were similar for <I>amp</I> <SUP> <I>R</I> </SUP> versus <I>kan</I> <SUP> <I>R</I> </SUP>, except for the chlorination of e-ARGs, in which the damage to <I>amp</I> <SUP> <I>R</I> </SUP> occurred faster than that to <I>kan</I> <SUP> <I>R</I> </SUP>. Chlorine and UV dose-dependent ARG inactivation levels determined in a wastewater effluent matrix could be reasonably explained by the kinetic data obtained from the phosphate buffered solutions and the expected oxidant (chlorine and OH radicals) demands by water matrix components. These results can be useful in optimizing chlorine and UV-based disinfection systems to achieve ARG inactivation.</P> <P><B>Highlights</B></P> <P> <UL> <LI> Inactivation kinetics of ARB, e- and i-ARGs by chlorine, UV, UV/H<SUB>2</SUB>O<SUB>2</SUB> were determined. </LI> <LI> Damages of ARGs occurred much more slowly than the inactivation of ARB (<I>E. coli</I>). </LI> <LI> Damages of i-ARGs were slower than e-ARGs due to protections by cellular components. </LI> <LI> 4-log ARG reductions require 40–70 (mg × min)/L for chlorine and 50–130 mJ/cm<SUP>2</SUP> for UV. </LI> <LI> ARG removals in a wastewater effluent were predictable from the ARG damage kinetics. </LI> </UL> </P>
알루미늄 저압중공주조 공법을 이용한 후륜 크로스멤버 개발
윤석진(Sukjin Yoon),손준형(Junhyung Sohn),장우정(Woojung Jang),윤주영(Juyoung Yoon),이용욱(Yonguk Lee),조영건(Younggun Cho) 한국자동차공학회 2020 한국자동차공학회 학술대회 및 전시회 Vol.2020 No.11
In the case of a suspension part, since it is located in the lower part of the vehicle, it has a great advantage of improving fuel economy due to weight reduction. In order to reduce the weight of vehicles, there are increasing cases of applying aluminum to suspension parts. This paper describes the stages of development of a rear cross member with a welded aluminum low pressure hollow casting method and extrusion method. The result of the aluminum cross member study showed that the weight was reduced by 6.3㎏ and natural frequency was improved by 46.7㎐ compared with the steel cross member.
YoungGun Pu,Jun-Gi Jo,Changsik Yoo,Dojin Park,Seong-Eon Park,Suk-Joong Lee,Kang-Yoon Lee 대한전자공학회 2008 ITC-CSCC :International Technical Conference on Ci Vol.2008 No.7
This paper presents a low power CMOS frequency synthesizer for GPS application that can support multiple reference clocks. The frequency synthesizer has fractional-N phase locked loop structure with sigma-delta modulator to allow multiple reference clock frequencies. The measured phase noise is -126㏈c/㎐ at 1㎒ offset from the carrier. This chip is fabricated with 0.18㎛ CMOS technology, and the die area of the frequency synthesizer is 1.1㎜ × 1.05㎜. The power consumption is 18㎽ at 1.8V supply voltage.