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Boussairi Bouzazi,Nobuaki Kojima,Yoshio Ohshita,Masafumi Yamaguchi 한국물리학회 2013 Current Applied Physics Vol.13 No.7
Deep level transient spectroscopy (DLTS) was deployed to study the evolution, upon electron irradiation and hydrogenation of GaAsN grown by chemical beam epitaxy, of the main nitrogen-related nonradiative recombination center (E1), localized at 0.33 eV below the bottom edge of the conduction band of the alloy. On one hand, the electron irradiation was found to enhance the density of E1 depending on the fluence dose. On the other hand, the hydrogenation was found to passivate completely E1. Furthermore,two new lattice defects were only observed in hydrogenated GaAsN films and were suggested to be in relationship with the origin of E1. The first defect was an electron trap at average thermal activation energy of 0.41 eV below the CBM of GaAsN and was identified to be the EL5-type native defect in GaAs,originating from interstitial arsenic (Asi). The second energy level was a hole trap, newly observed at average thermal activation energy of 0.11 eV above the valence band maximum of the alloy and its origin was tentatively suggested to be in relationship with the monohydrogenenitrogen (NeH) complex. As the possible origin of E1 was tentatively associated with the split interstitial formed from one N atom and one As atom in single V-site [(NeAs)As], we strongly suggested that the new hole trap took place after the dissociation of E1 and the formation of NeH complex.
Influence of a SiO2 Mask on the Growth of Semi-Polar (11-22) GaN on Patterned Si (311) Substrates
Min Yang,안형수,Masahito Yamaguchi,Nobuhiko Sawaki,Tomoyuki Tanikawa,Yoshio Honda 한국물리학회 2009 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.54 No.6
The selective growth of semi-polar (11-22) GaN layers on patterned Si (311) substrates was performed by using metal organic vapor phase epitaxy (MOVPE) without using a SiO2 mask to decrease the density of crystal defects that may be caused by the existence of the mask material. We found that even without using a SiO2 mask (11-22) GaN layers could be selectively grown on Si (111) facets when the mesa width of the patterned silicon substrates was smaller than 1 micrometer. Low temperature (7 K) cathodoluminescence (CL) measurement confirmed that the intensity of the emission peak arising from the crystal defect region was remarkably decreased by the use of a maskless selective growth method. Low-temperature CL measurements were also performed on InGaN multiple-quantum-well (MQW) structures grown on (11-22) GaN templates. From the CL spectra, we could observe that the InGaN MQW structure grown on a (11-22) GaN template, which was selectively grown without a SiO$_{2}$ mask, had fewer crystal defects than that grown on a (11-22) GaN template formed by using the conventional selective growth method.