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배선기,박창엽,남춘우 연세대학교 산업기술연구소 1984 논문집 Vol.16 No.1
In this study, the MIM devices of Al-Al₂O₃-Al, Al-Al₂O₃-Ag structure with junction area ??[㎠] and thickness of oxide layer 30[Å] were fabricated, and then those conduction mechanism and characteristics were investigated. The results, at low voltage region the voltage-current characteristics was ohmic because of the quantum mechanical tunneling and hopping process, and at high voltage region the voltage-current characteristics was I∝V² because of the space charge limited conduction. The voltage which transited from ohmic to I∝ V² and the barrier height were 110[mV], 0.42[eV] of Al-Al₂O₃-Al device and 90[mV], 0.44[eV] of Al-Al₂O₃-Ag device respectively. The polarity dependence of voltage-current characteristics was found only in Al-Al₂O₃-Ag device because of the intrinsic field in insulator thin film.
배기목,고상선,이원규 대진대학교 1995 大眞論叢 Vol.3 No.-
Various traffic problems, such as accident, congestion, etc., are caused by the change of industrial structure, expansion of economic scale, growth of living standard, and motorization. Especially, traffic accident brings our affection because of numbers of fatalities and casualties to our livers and properties. We, human being, can only control the influence factor of disasterous traffic accident. Therefore, this study focuses on the study of analyzing the influence factor to nonassaulted and assaulted drivers by using Logistics Regression Analysis.
박창엽,배선기,손광식 연세대학교 산업기술연구소 1984 논문집 Vol.16 No.1
In this paper, PMOSFET was fabricated by following a standard MOSFET fabrication process and the relation between channel conductivity and temperature was investigated. In order to show this relation, the variation of drain current(??) and gate voltage(??) and threshold voltage (??) with temperature were measured. The experimental results show the transition of conduction mechanism with temperature and the effect of gate electric field on the temperature characteristics of channel conductivity. At lower gate voltage, negative and zero temperature coefficients were appeared at lower temperature range because of the decrement of charge mobility and positive temperature coefficient was appeared at higher temperature range because of the surface state ionization. At higher gate voltage, zero temperature coefficient was appeared because of the equal effect of surface state ionization and mobility decrement on conductivity. In the region where the surface state ionization is dominant mechanism, the value of ?? was typically-13~-18mV/C and the corresponding surface state density was 3.4x??~4.7x?? ?? ?? and the variation of threshold voltage with temperature was -10mV/C.
한국 정신장애의 역학 조사 연구[I] : 각 정신장애의 유병률
조맹제,함봉진,김장규,박강규,정은기,서동우,김선욱,조성진,이준영,홍진표,최용성,박종익,이동우,이기철,배재남,신정호,정인원,박종한,배안,이충경 大韓神經精神醫學會 2004 신경정신의학 Vol.43 No.4
Objectives : This study aims to estimate the prevalence of the DSM-IV psychiatric disorders in Korean population using the Korean version of Composite International Diagnostic Interview (K-CIDI). Methods : Subjects were selected by taking multi-stage, cluster samples of 7,867 adult household residents, 18 to 64 years of age, in ten catchment areas. Total 78 trained interviewers administered the K-CIDI to the selected respondents, from June 1 to November30,2001. Results : Total 6,275 respondents completed the interview. Some 33.5% of respondents reported at least one lifetime disorder, 20.6% reported at least one-year disorder, and 16.7% reported at least one-month disorder. The most common lifetime disorders were alcohol abuse/dependence (17.24%), nicotine dependence/withdrawal (11.19%), specific phobia (5.16%), and major de-pressive disorder (4.25%). The lifetime prevalence of substance abuse/dependence (0.25%) and schizophrenia (0.16%) was very low. Nicotine and alcohol use disorder showed very high male/female ratio. Mood disorder and anxiety disorder were more prevalent among female than male. Conclusion : The prevalence of psychiatric disorders was high. In comparison with other studies, remarkable differences in distributions of psychiatric disorders across the areas and times were observed.
Bae, Seon-Gi,Shin, Hyea-Gyiung,Chung, Kwang-Hyun,Yoo, Ju-Hyun,Im, In-Ho The Korean Institute of Electrical and Electronic 2015 Transactions on Electrical and Electronic Material Vol.16 No.4
The particle sizes of 0.95(K<sub>0.5</sub>Na<sub>0.5</sub>)NbO<sub>3</sub>-0.05BaTiO<sub>3</sub> powder were controlled by secondary milling time after calcination. The average particle sizes, Dmean, of 0.95(K<sub>0.5</sub>Na<sub>0.5</sub>)NbO<sub>3</sub>-0.05BaTiO<sub>3</sub> powders were critically changed from 14.31 μm to 0.91 μm by secondary milling time. The dielectric and piezoelectric properties of 0.95(K<sub>0.5</sub>Na<sub>0.5</sub>)NbO<sub>3</sub>-0.05BaTiO<sub>3</sub> ceramics depended on the particle sizes of powders after calcination and the secondary milling process. As secondary milling times after calcination were increased to more than 48 hr, the dielectric and piezoelectric properties of 0.95(K<sub>0.5</sub>Na<sub>0.5</sub>)NbO<sub>3</sub>-0.05BaTiO<sub>3</sub> ceramics were deteriorated.
Bae, Seon-Gi,Shin, Hyea-Gyiung,Sohn, Eun-Young,Im, In-Ho The Korean Institute of Electrical and Electronic 2013 Transactions on Electrical and Electronic Material Vol.14 No.2
$0.95(Na_{0.5}K_{0.5})NbO_3-0.05BaTiO_3+0.2wt%\;Ag_2O$ (hereafter, No excess NKN) ceramics and $0.95(Na_{0.5}K_{0.5})NbO_3-0.05BaTiO_3+0.2wt%\;Ag_2O$ with excess $(Na_{0.5}K_{0.5})NbO_3$ (hereafter, Excess NKN) were fabricated by the conventional solid state sintering method, and their phase transition properties and dielectric properties were investigated. The crystalline structure of No excess NKN ceramics and Excess NKN ceramics were shown characteristics of polymorphic phase transition (hereafter, PPT), especially shift from the orthorhombic to tetragonal phase by increasing sintering temperature range from $1,100^{\circ}C$ to $1,200^{\circ}C$. Also, the temperature coefficient of capacitance (hereafter, TCC) of No excess NKN ceramics and Excess NKN ceramics from $-40^{\circ}C$ to $100^{\circ}C$ was measured to evaluate temperature stability for applications in cold regions. The TCC of No excess NKN and Excess NKN ceramics showed positive TCC characteristics at a temperature range from $-40^{\circ}C$ to $100^{\circ}C$. Especially, Excess NKN showed a smaller TCC gradient than those of Excess NKN ceramics in range from $-40^{\circ}C$ to $100^{\circ}C$. Therefore, NKN piezoelectric ceramics combined with temperature compensated capacitor having negative temperature characteristics is desired for usage in cold regions.
CuO 첨가에 따른 0.5Ba(Zr0.2Ti0.8)O3-0.5(Ba0.7Ca0.3)TiO3 세라믹스의 유전 이완 특성
배선기 ( Seon Gi Bae ),신혜경 ( Hyea Kyoung Shin ),이석진 ( Suk Jin Jin Lee ),임인호 ( In Ho Im ) 한국전기전자재료학회 2015 전기전자재료 Vol.28 No.2
We investigated the dielectric relaxation properties 0.5Ba(Zr0.2Ti0.8)O3-0.5(Ba0.7Ca0.3)TiO3 ceramics with CuO addition. With increasing CuO addition, the lattice parameter was increased by substitution of small amount Cu2+ion in B-site of 0.5Ba(Zr0.2Ti0.8)O3-0.5(Ba0.7Ca0.3)TiO3 ceramics. Also the grain size and the maximum dielectric constant of 0.5Ba(Zr0.2Ti0.8)O3-0.5(Ba0.7Ca0.3)TiO3 ceramics was decreased with increasing amounts of CuO addition. Moreover, the diffused phase transition properties (γ) of 0.5Ba(Zr0.2Ti0.8)O3-0.5(Ba0.7Ca0.3)TiO3 ceramics was increased by compositional fluctuation with increasing of CuO amount, changed from 1.45 at 1 wt% CuO addition to 1.94 at 7 wt% CuO addition.