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Composite Behavior of Multiple Memristor Circuits
Budhathoki, Ram Kaji,Sah, Maheshwar Pd,Adhikari, Shyam Prasad,Hyongsuk Kim,Chua, Leon IEEE 2013 IEEE transactions on circuits and systems. a publi Vol.60 No.10
<P>Composite characteristics of the parallel and serial connections of memristors are investigated. The memristor is one of the fundamental electrical elements, which has recently been successfully built. However, its electrical characteristics are not yet fully understood. When multiple memristors are connected to each other, the composite behavior of the devices becomes complicated and is difficult to predict, due to the polarity dependent nonlinear variation in the memristance of individual memristors. In this work, we investigate the relationships among flux, charge, and memristance of diverse composite memristors, using both linear and nonlinear memristor models, and analyze the characteristics of complex memristor circuits.</P>
Ram Kaji Budhathoki,Maheshwar Pd. Sah,김주홍(Juhong Kim),김형석(Hyongsuk Kim) 大韓電子工學會 2012 電子工學會論文誌-SD (Semiconductor and devices) Vol.49 No.5
저항, 콘덴서, 및 인턱터와 함께 4의 회로 소자로 알려진 멤리스터가 개발되었으나, 아직 그 전기적 특성이 충분히 해석되지 않고 있다. 멤리스터들은 연결된 극성에 따라서 저항이 증가 혹은 감소하며, 직렬 혹은 병렬연결 형태에 따라서 그 동작 특성이 다양해진다. 본 연구에서는 HP의 TiO2 멤리스터를 모델로 하여 다양한 직 병렬회로에 대한 전기적 특성을 분석하였다. 이를 위해서 사인파 입력신호에 대해서 나타나는 전압-전류 간의 히스테르시스 루프의 다양한 모양을 분석하였다. 본 멤리스터 연구결과는 멤리스터 소자에 대한 특성 이해와 논리 회로 및 뉴런 셀에의 응용회로들의 특성을 분석하는데 유용하게 사용될 수 있다. Memristor which is known as fourth basic circuit element has been developed recently but its electrical characteristics are not still fully understood. Memristor has the incremental and decremental feature of the resistance depending upon the connected polarities. Also, its operational behavior become diverse depending on its connection topologies. In this work, electrical characteristics of diverse types of serial and parallel connections are investigated using the HP TiO2 model. The characteristics are analyzed with pinched hystersis loops on the V-I plane when sine input signal is applied. The results of the work would be utilized usefully for analyzing the characteristics of memristor element and applications to logic circuit and neuron cells.
Transient Behavior of Serial and Parallel Memristor Circuits
람 카지 부다토키(Ram Kaji Budhathoki),마헤스워 샤파라(Maheshwar Prasad Sah),양창주(Changju Yang),김용진(Yongjin Kim),김형석(Hyongsuk Kim) 제어로봇시스템학회 2013 제어로봇시스템학회 각 지부별 자료집 Vol.2013 No.12
When input voltage/current is supplied to a circuit with multiple memristors, the composite behavior of the memristor circuit exhibits transient states before it enters a steady state. During the transient state period, the behavior is very complex and not predictable due to each memristor`s different action depending upon its connection polarity and initial state. In this paper, the transient characteristics of a composite memristor are analyzed via the relationships of charge, flux and memristance of each memristor. Also, a general computation method of composite memristance for multiple-memristor circuits of diverse configurations is proposed.
Charge Controlled Meminductor Emulator
Maheshwar Pd. Sah,Ram Kaji Budhathoki,Changju Yang,Hyongsuk Kim 대한전자공학회 2014 Journal of semiconductor technology and science Vol.14 No.6
Emulations of memristor-family elements are very important, since their physical realizations are very difficult to achieve with recent technologies. Although some previous studies succeeded in designing memristor and memcapacitor emulators, no significant contribution towards meminductor emulator has been presented so far. The implementation of a meminductor emulator is very important, since real meminductors are not expected to appear in near future. We designed the first meminductor emulator whose inductance can be varied by an external current source without employing any memrisitve system. The principle of our architecture and its feasibility have been verified using SPICE simulation.
Charge Controlled Meminductor Emulator
Sah, Maheshwar Pd.,Budhathoki, Ram Kaji,Yang, Changju,Kim, Hyongsuk The Institute of Electronics and Information Engin 2014 Journal of semiconductor technology and science Vol.14 No.6
Emulations of memristor-family elements are very important, since their physical realizations are very difficult to achieve with recent technologies. Although some previous studies succeeded in designing memristor and memcapacitor emulators, no significant contribution towards meminductor emulator has been presented so far. The implementation of a meminductor emulator is very important, since real meminductors are not expected to appear in near future. We designed the first meminductor emulator whose inductance can be varied by an external current source without employing any memrisitve system. The principle of our architecture and its feasibility have been verified using SPICE simulation.
Analysis of Electrical Features of Serially and Parallelly connected Memristor Circuits
람 카지 부다토키,마헤스워 사,김주홍,김형석,Budhathoki, Ram Kaji,Sah, Maheshwar Pd.,Kim, Ju-Hong,Kim, Hyong-Suk The Institute of Electronics and Information Engin 2012 電子工學會論文誌-CI (Computer and Information) Vol.49 No.5
저항, 콘덴서, 및 인턱터와 함께 4의 회로 소자로 알려진 멤리스터가 개발되었으나, 아직 그 전기적 특성이 충분히 해석되지 않고 있다. 멤리스터들은 연결된 극성에 따라서 저항이 증가 혹은 감소하며, 직렬 혹은 병렬연결 형태에 따라서 그 동작 특성이 다양해진다. 본 연구에서는 HP의 $TiO_2$ 멤리스터를 모델로 하여 다양한 직 병렬회로에 대한 전기적 특성을 분석하였다. 이를 위해서 사인파 입력신호에 대해서 나타나는 전압-전류 간의 히스테르시스 루프의 다양한 모양을 분석하였다. 본 멤리스터 연구결과는 멤리스터 소자에 대한 특성 이해와 논리 회로 및 뉴런 셀에의 응용회로들의 특성을 분석하는데 유용하게 사용될 수 있다. Memristor which is known as fourth basic circuit element has been developed recently but its electrical characteristics are not still fully understood. Memristor has the incremental and decremental feature of the resistance depending upon the connected polarities. Also, its operational behavior become diverse depending on its connection topologies. In this work, electrical characteristics of diverse types of serial and parallel connections are investigated using the HP $TiO_2$ model. The characteristics are analyzed with pinched hystersis loops on the V-I plane when sine input signal is applied. The results of the work would be utilized usefully for analyzing the characteristics of memristor element and applications to logic circuit and neuron cells.
A Circuit-Based Learning Architecture for Multilayer Neural Networks With Memristor Bridge Synapses
Adhikari, Shyam Prasad,Hyongsuk Kim,Budhathoki, Ram Kaji,Changju Yang,Chua, Leon O. IEEE 2015 IEEE Transactions on Circuits and Systems I: Regul Vol.62 No.1
<P>Memristor-based circuit architecture for multilayer neural networks is proposed. It is a first of its kind demonstrating successful circuit-based learning for multilayer neural network built with memristors. Though back-propagation algorithm is a powerful learning scheme for multilayer neural networks, its hardware implementation is very difficult due to complexities of the neural synapses and the operations involved in the learning algorithm. In this paper, the circuit of a multilayer neural network is designed with memristor bridge synapses and the learning is realized with a simple learning algorithm called Random Weight Change (RWC). Though RWC algorithm requires more iterations than back-propagation algorithm, we show that a circuit-based learning using RWC is two orders faster than its software counterpart. The method to build a multilayer neural network using memristor bridge synapses and a circuit-based learning architecture of RWC algorithm is proposed. Comparison between software-based and memristor circuit-based learning are presented via simulations.</P>