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채널이 모든 방향으로 산화막 절연된 수직 채널 구조의 단일 셀 메모리-로직 복합 소자(OIC-VFET) 및 집적공정
목찬수(Chansu Mok),이규훈(Gyuhoon Lee),박창준(Changjun Park),김수민(Soomin Kim),이예지(Yeji Lee),구호정(Hojung Goo),김현욱(Hyunwook Kim),김윤재(Yunjae Kim),김성준(Sungjun Kim),조성재(Seongjae Cho),백승재(Seungjae Baik),강명곤(Myounggon 대한전자공학회 2023 대한전자공학회 학술대회 Vol.2023 No.11
Preferential etching of SieSi bond in the microcrystalline silicon germanium
Shinho Kim,Chansu Park,Jung-Chul Lee,Jun-Sik Cho,Yang-Do Kim 한국물리학회 2013 Current Applied Physics Vol.13 No.3
Hydrogenated microcrystalline silicon germanium (mc-Si1-xGex:H) films were investigated as a bottom cell absorber in multi-junction solar cells. mc-Si1-xGex:H films were prepared using very high frequency (VHF, 60 MHz) plasma enhanced chemical vapor deposition (PECVD) systems working pressure of about 1.5 Torr. The precursor flow rates were carefully controlled to determine the phase transition point and to improve the crystallinity of mc-Si1-xGex:H. A relatively high plasma power was necessary to have the high hydrogen (H2) dilution. Raman spectroscopy study showed transition steps from amorphous to microstructure morphology as hydrogen dilution increasing. Crystallite SieGe and GeeGe bonds were occurred at relatively higher H2 dilution compare to crystallite SieSi bond. The rapidly increased Ge content as increasing the H2 dilution is believed mainly due to the different decomposition rate of silane (SiH4) and germane (GeH4). The other reason of high Ge content even at the low GeH4 precursor flow rate is probably due to the preferential etching of silicon atom by H2. The preferential etching of SieH possibly occurred in very highly concentrated H2 plasma due to the preferential attachment of SieH. The compositions of mc-Si1-xGex:H films measured using RBS were Si0.83Ge0.17, Si0.67Ge0.33 and Si0.59Ge0.41 at H2/SiH4 flow rate of 60, 80 and 100, respectively. mc-Si1-xGex:H films showed the dark (sd) and photo conductivity (sp) of about 107 and 10-5 S/cm, respectively and photo response (sp/sd) was about 102. This study will present the comprehensive evaluation of crystallization behavior of mc-Si1-xGex:H films.
Lee, Hyunju,Park, Chansu,Lee, Eunkyung,Lee, Ju Dong,Kim, Yangdo American Chemical Society 2017 Journal of chemical and engineering data Vol.62 No.12
<P>HFC-134a gas was investigated as a potential guest molecule to improve the thermodynamic conditions and formation rate for CO<SUB>2</SUB> hydrate. In the phase equilibrium study, the equilibrium pressure of CO<SUB>2</SUB> + HFC-134a was lower than that of pure CO<SUB>2</SUB> gas, and the equilibrium pressure decreased gradually with increasing HFC-134a concentration. The dissociation enthalpy (Δ<I>H</I><SUB>d</SUB>) was calculated using the Clausius–Clapeyron equation, and the Δ<I>H</I><SUB>d</SUB> value also changed with increasing HFC-134a concentration. In particular, the Δ<I>H</I><SUB>d</SUB> of 8 mol % HFC-134a-added CO<SUB>2</SUB> hydrate was 143.2 kJ/mol, which was similar to that of pure HFC-134a (structure-II). In the kinetic study, the reactor was initially filled with CO<SUB>2</SUB> + HFC-134a gas only and pure CO<SUB>2</SUB> gas was then supplied as a source when the hydrate reaction proceeded. As a result, the formation rate of the HFC-134a mixture in the initial 2 min was faster than that of pure CO<SUB>2</SUB>. This was consistent with the gas chromatography results, which showed that HFC-134a occupies the cage at the beginning of hydrate formation. These results suggest that the addition of HFC-134a influences the CO<SUB>2</SUB> hydrate thermodynamic equilibrium and kinetic characteristics.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/jceaax/2017/jceaax.2017.62.issue-12/acs.jced.7b00756/production/images/medium/je-2017-007568_0007.gif'></P>
Sangmin Shin,Chansu Park,Chiho Kim,김양도,박성균,이재호 한국물리학회 2016 Current Applied Physics Vol.16 No.2
Cu2ZnSnS4 (CZTS) has attracted considerable attention as the next generation thin film solar cell to replace CIGS because of its price and availability. The electrodeposition method is one of the fabrication methods. The reduction behaviors of each Cu, Sn and Zn from the unitary system were examined. Cyclic voltammtry (CV) was performed to analyze the behaviors. Trisodium citrate was used as the complexing agent to reduce the difference in the reduction potentials of each material. The effects of pH on the stability of the complexes were also investigated and pH 4.7 was selected to minimize the concentration of H3Cit and Cit3. The reduction potential of Cu was lowered from 0.2 V (vs. Ag/AgCl) to 0.5 V. The reduction potential of Sn was lowered from 0.5 V (vs. Ag/AgCl) to 0.7 V. The reduction potential of Zn was changed from 1.2 V (vs. Ag/AgCl) to 0.7 V. The change in reduction potential in a complex system can allow the fabrication of CZTS thin films from a Cu, Sn and Zn mixed single bath using an electrodeposition method.
440 ㎫급 도금강판의 저항 점 용접 시 AC 및 MFDC전원에 따른 가용전류구간 비교 연구
지창욱(Changwook Ji),박찬수(Chansu Park),김치호(Chiho Kim),조용준(Yongjoon Cho),오동진(Dongjin Oh),김명현(Myung-Hyun Kim),김양도(Yang-Do Kim),박영도(Yeong-Do Park) 대한용접·접합학회 2017 대한용접·접합학회지 Vol.35 No.1
This paper presents a comparative study of the AC and MFDC resistance spot welding process with consideration of sheet thickness. The previous studies have confirmed that there is difference in the optimum welding current and expulsion current with AC and MFDC. The aim of this study was revealing the effect of sheet thickness on weldable current range and expulsion behavior for AC and MFDC welding processes. The optimum welding current of AC was lower (1.6 ㎄) than MFDC welding process in 0.8 mm sheet thickness. Early nugget growth being caused by the peak current of AC developed weld interface deformation, which resulted in suppressing the growth of corona bond and occurrence of low current expulsion. The resistance spot welding for thicker sheet (1.4 ㎜) required lower current of 0.6 ㎄ for the expulsion on the MFDC welding process. The growth of contact diameter (size of corona bond) and button diameter was linear up to the expulsion current with MFDC welding process. Therefore, more attention is required when the AC and MFDC resistance spot welding process is applied for different thickness of steel sheet combination for automotive application.