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Schottky Barrier MOSFETs with High Current Drivability for Nano-regime Applications
Moongyu Jang,Yarkyeon Kim,Myungsim Jun,Cheljong Choi,Taeyoub Kim,Byoungchul Park,Seongjae Lee 대한전자공학회 2006 Journal of semiconductor technology and science Vol.6 No.1
Various sizes of erbium/platinum silicided n/p-type Schottky barrier metal-oxide-semiconductor field effect transistors (SB-MOSFETs) are manufactured from 20μm to 10nm. The manufactured SB-MOSFETs show excellent DIBL and subthreshold swing characteristics due to the existence of Schottky barrier between source and channel. It is found that the minimization of trap density between silicide and silicon interface and the reduction of the underlap resistance are the key factors for the improvement of short channel characteristics. The manufactured 10 nm n-type SBMOSFET showed 550μA/um saturation current at VGS-VT = VDS = 2V condition (Tox = 5nm) with excellent short channel characteristics, which is the highest current level compared with reported data.