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The Rolling-Sliding Friction of Rubber and the Behavior of Contact Area
Y. UCHIYAMA,N. MONDEN,T. MIYAO,T. IWAI 한국트라이볼로지학회 2002 한국트라이볼로지학회 학술대회 Vol.2002 No.10
Rolling-sliding friction was investigated for three SBR (styrene-butadiene rubber) specimens including silica-tilled. HAF carbon black-tilled, and SAF carbon black-tilled SBR. When a rubber wheel was rolled against a glass disk, the coefficient of friction varied with the slip ratios. The coefficient of friction for the silica-tilled SBR showed the highest value of the rubber specimens examined under various slip ratios. The contact areas of silica-filled SBR were larger than those of the carbon black-filled SBRs, as indicated the modulus of the silica-tilled SBR showing the lowest value. The contact area during rolling-sliding friction was always smaller than those during the static contact. The friction force at the unit contact area for the silica-filled SBR under braking and driving was higher than those of carbon black-filled SBRs.
Beam Profile Monitor for Intense, Negative, Hydrogen-Ion Beams in the J-PARC Linac
Akihiko Miura,Kazuo Hasegawa,Tomoaki Miyao,Tomofumi Maruta,Yong Liu,Kazuhiko Horioka 한국물리학회 2016 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.69 No.6
Tracking the beam halo and its growth are essential to mitigate the beam dynamics problem in high-current accelerators. In the J-PARC linac, a beam halo has been reported to appear at the place of a mismatched magnet and/or an inaccurately set cavity. The beam loss becomes more significant as the beam’s output power increases. We developed a sensitive wire scanner monitor (WSM) to measure the transverse root-mean-squared (RMS) size of a negative hydrogen-ion beam for the transverse matching between quadrupole magnets. Although the dynamic range of 10+2 is sufficient to evaluate the RMS beam size, we set a dynamic range goal of 10+4 because we intend to observe the beam halo at the same time. We achieved a dynamic range over 10+4 by selecting a proper combination of wire material and diameter by considering the interactions between the beam and the wires. This enabled a measurement of the beam halo evolution in the linac. We discuss the mechanism that enabled the wider dynamic range compared with proton-beam WSMs. In addition, we propose a new chopper-phase-tuning method, which is realized because of the wide dynamic range of the WSM. This method may provide an accurate tuning scheme for not only the present operation but also the high-peak beam-current operation of the linac.
Functional diversification of the two C-class MADS box genes OSMADS3 and OSMADS58 in Oryza sativa.
Yamaguchi, Takahiro,Lee, Dong Yeon,Miyao, Akio,Hirochika, Hikohiko,An, Gynheung,Hirano, Hiro-Yuki American Society of Plant Physiologists 2006 The Plant cell Vol.18 No.1
<P>The C-class MADS box gene AGAMOUS (AG) plays crucial roles in Arabidopsis thaliana development by regulating the organ identity of stamens and carpels, the repression of A-class genes, and floral meristem determinacy. To examine the conservation and diversification of C-class gene function in monocots, we analyzed two C-class genes in rice (Oryza sativa), OSMADS3 and OSMADS58, which may have arisen by gene duplication before divergence of rice and maize (Zea mays). A knockout line of OSMADS3, in which the gene is disrupted by T-DNA insertion, shows homeotic transformation of stamens into lodicules and ectopic development of lodicules in the second whorl near the palea where lodicules do not form in the wild type but carpels develop almost normally. By contrast, RNA-silenced lines of OSMADS58 develop astonishing flowers that reiterate a set of floral organs, including lodicules, stamens, and carpel-like organs, suggesting that determinacy of the floral meristem is severely affected. These results suggest that the two C-class genes have been partially subfunctionalized during rice evolution (i.e., the functions regulated by AG have been partially partitioned into two paralogous genes, OSMADS3 and OSMADS58, which were produced by a recent gene duplication event in plant evolution).</P>
Ge Fraction Dependence of Al-Induced Crystallization of SiGe at Low Temperatures
Masashi Kurosawa,Yoshitaka Tsumura,Taizoh Sadoh,Masanobu Miyao 한국물리학회 2009 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.54 No.1
Al-induced crystallization of Si<SUB>1-x</SUB>Ge<SUB>x</SUB> films (x = 0 - 0.5) has been investigated by using amorphous SiGe (a-SiGe)/Al structures to realize polycrystalline SiGe (poly-Si) layers on insulating lms at low temperatures. For the Si sample, poly-Si oriented to the (111) direction was formed after annealing (450 ℃, 20 h) and inversion of Si/Al layers occurred completely. For Si<SUB>1-x</SUB>Ge<SUB>x</SUB> samples (x > 0), the layer exchange occurred in partial areas and poly-SiGe with the (111) orientation was grown only in the exchanged areas. The Ge fractions of the crystallized SiGe were almost the same as those of the initial a-SiGe layers. The diameters of the crystallized areas decreased from ∼100 (x = 0) to ∼30 μm (x = 0.5) with increasing Ge fraction. This technique can be utilized for the formation of high-quality poly-SiGe at low temperatures. Al-induced crystallization of Si<SUB>1-x</SUB>Ge<SUB>x</SUB> films (x = 0 - 0.5) has been investigated by using amorphous SiGe (a-SiGe)/Al structures to realize polycrystalline SiGe (poly-Si) layers on insulating lms at low temperatures. For the Si sample, poly-Si oriented to the (111) direction was formed after annealing (450 ℃, 20 h) and inversion of Si/Al layers occurred completely. For Si<SUB>1-x</SUB>Ge<SUB>x</SUB> samples (x > 0), the layer exchange occurred in partial areas and poly-SiGe with the (111) orientation was grown only in the exchanged areas. The Ge fractions of the crystallized SiGe were almost the same as those of the initial a-SiGe layers. The diameters of the crystallized areas decreased from ∼100 (x = 0) to ∼30 μm (x = 0.5) with increasing Ge fraction. This technique can be utilized for the formation of high-quality poly-SiGe at low temperatures.