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Mao-feng Yue,Ren-chao Zhou,Ye-lin Huang,Guo-rong Xin,Su-hua Shi,Li Feng 한국식물학회 2010 Journal of Plant Biology Vol.53 No.2
High levels of genetic variation enable species to adapt to changing environments and provide plant breeders with the raw materials necessary for artificial selection. In the present study, six AFLP primer pairs were used to assess the genetic diversity of Desmodium triflorum (L.)DC. from 12 populations in South China. A high percentage of polymorphic loci (P=76.16%) and high total gene diversity (HT=0.310) were found, indicating that the genetic diversity of D. triflorum is high at the species level. Genetic diversity was also relatively high at the population level (P=55.85%, He=0.230). The coefficient of gene differentiation among populations (GST) was 0.255, indicating that while most genetic diversity resided within populations, there was also considerable differentiation among populations. AMOVA also indicated 24.29% of the total variation to be partitioned among populations (ΦST=0.243). UPGMA clustering analysis based on genetic distances showed that the 12 populations could be separated into three subgroups: an eastern, a western, and a central-southern subgroup. However, a Mantel test revealed no significant correlation (r=0.286, p=0.983)between the geographical distances and genetic distances separating these populations; mountain barriers to gene flow and human disturbance may have confounded these correlations. The present study has provided some fundamental genetic data that will be of use in the exploitation of D. triflorum.
( Yue Zhao ),( Baili Chen ),( Yao He ),( Shenghong Zhang ),( Yun Qiu ),( Rui Feng ),( Hongsheng Yang ),( Zhirong Zeng ),( Shomron Ben-horin ),( Minhu Chen ),( Ren Mao ) 대한장연구학회 2020 Intestinal Research Vol.18 No.2
Background/Aims: Crohn’s disease (CD) primarily affects young female adults of reproductive age. Few studies have been conducted on this population’s ovarian reserve status. The aim of study was to investigate potential risk factors associated with low ovarian reserve, as reflected by serum anti-Müllerian hormone (AMH) in women of reproductive age with CD. Methods: This was a case-control study. Cases included 87 patients with established CD, and healthy controls were matched by age, height and weight in a 1:1 ratio. Serum AMH levels were measured by enzyme-linked immunosorbent assay. Results: The average serum AMH level was significantly lower in CD patients than in control group (2.47±2.08 ng/mL vs. 3.87±1.96 ng/mL, respectively, P<0.001). Serum AMH levels were comparable between CD patients and control group under 25 years of age (4.41±1.52 ng/mL vs. 3.49±2.10 ng/mL, P=0.06), however, serum AMH levels were significantly lower in CD patients over 25 years of age compared to control group (P<0.05). Multivariable analysis showed that an age greater than 25 (odds ratio [OR], 10.03; 95% confidence interval [CI], 1.90-52.93, P=0.007), active disease state (OR, 27.99; 95% CI, 6.13-127.95, P<0.001) and thalidomide use (OR, 15.66; 95% CI, 2.22-110.65, P=0.006) were independent risk factors associated with low ovarian reserve (serum AMH levels <2 ng/mL) in CD patients. Conclusions: Ovarian reserve is impaired in young women of reproductive age with CD. Age over 25 and an active disease state were both independently associated with low ovarian reserve. Thalidomide use could result in impaired ovarian reserve. (Intest Res 2020; 18:200-209)
Effects of Ohmic Area Etching on Buffer Breakdown Voltage of AlGaN/GaN HEMT
Chong Wang,Xiao-Xiao Wel,Meng-Di Zhao,Yun-Long He,Xue-Feng Zheng,Wei Mao,Xiao-Hua Ma,Jin-Cheng Zhang,Yue Hao 한국전기전자재료학회 2017 Transactions on Electrical and Electronic Material Vol.18 No.3
This study is on how ohmic area etching affects the buffer breakdown voltage of AlGaN/GaN HEMT. The surfacemorphology of the ohmic metal can be improved by whole etching on the ohmic area. The buffer breakdown voltagesof the samples with whole etching on the ohmic area were improved by the suppression of the metal spikes formedunder the ohmic contact regions during high-temperature annealing. The samples with selective etching on theohmic area were investigated for comparison. In addition, the buffer leakage currents were measured on the differentradii of the wafer, and the uniformity of the buffer leakage currents on the wafer were investigated by PL mappingmeasurement.
Effects of Ohmic Area Etching on Buffer Breakdown Voltage of AlGaN/GaN HEMT
Wang, Chong,Wel, Xiao-Xiao,Zhao, Meng-Di,He, Yun-Long,Zheng, Xue-Feng,Mao, Wei,Ma, Xiao-Hua,Zhang, Jin-Cheng,Hao, Yue The Korean Institute of Electrical and Electronic 2017 Transactions on Electrical and Electronic Material Vol.18 No.3
This study is on how ohmic area etching affects the buffer breakdown voltage of AlGaN/GaN HEMT. The surface morphology of the ohmic metal can be improved by whole etching on the ohmic area. The buffer breakdown voltages of the samples with whole etching on the ohmic area were improved by the suppression of the metal spikes formed under the ohmic contact regions during high-temperature annealing. The samples with selective etching on the ohmic area were investigated for comparison. In addition, the buffer leakage currents were measured on the different radii of the wafer, and the uniformity of the buffer leakage currents on the wafer were investigated by PL mapping measurement.