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중국 조손가정 초기 성인기 손자녀의 부모화 경험과 대인관계문제 간의 관계에 대한 연구 -불안 애착의 매개효과를 중심으로
조몽적(Meng Di Zhao),박정윤(Jeong Yun Park) 한국가족치료학회 2021 가족과 가족치료 Vol.29 No.1
본 연구는 부모화 경험, 불안 애착이 조손가정 초기 성인기 손자녀의 대인관계문제에 미치는 영향을 밝히고자 하는 목적으로 실시되었다. 중국에 거주하는 18~29세의 조부모와 단독적으로 3년 이상의 생활경험을 갖고 있는 209명을 대상으로 연구를 진행하였으며, SPSS 23.0와 Process Macro 3.3 프로그램을 사용하여 통계 분석을 실시하였다. 주요 결과, 첫째, 조손가정 초기 성인기 손자녀의 부모화 경험, 불안 애착, 대인관계문제는 중간보다 조금 높은 수준으로 나타났다. 둘째, 부모화 경험과 불안 애착이 대인관계문제에 유의미한 영향을 미치는 것으로 나타났으며, 부모화 경험과 대인관계문제 간의 관계에서 불안 애착의 부분 매개효과가 확인되었다. 따라서 본 연구는 조손가정 손자녀의 부모화 경험과 대인관계문제에 주목할 필요가 있다는 것을 보이고 조손가정을 위한 프로그램과 교육을 개발하는 필요성을 제시하였고 상담 및 치료 개입에 대해 논의하였다. Objectives: The purpose of this study is to identify the influence of parentification and anxiety attachment on interpersonal relationship problems among early adult grandchildren in multigenerational households. Methods: The study was conducted on 209 participants coming from multigenerational households aged 18 to 29 living in China, and the collected data were analyzed using SPSS 23.0 and SPSS PROCESS macro 3.3 Results: First, the grandchildren have experienced extensive parentification, have formed anxiety attachment, and have faced problems in interpersonal relationships. Second, parentification and anxiety attachment had significant effects on interpersonal problems, and a partial mediating effect of anxiety attachment was confirmed in the relationship between parentification and interpersonal problems. Conclusions: This study suggests that it is necessary to pay attention to the parentification and interpersonal relationships and to develop meaningful programs for multigenerational households.
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Ying-Wang,Yi-guo Chen,Wan-shuang Zhao,Di Li,Ya-han Xu,Meng-di Li,Jin Chen,Zhi-jun Kou,Qi-ge Wang,Nsoa dimitri Joseph 사단법인약침학회 2018 Journal of Acupuncture & Meridian Studies Vol.11 No.3
This study aims to investigate the possible mechanisms of electroacupuncture (EA) at PC6to improve myocardial ischemia (MI) by regulating the cardiac transient outward potassiumcurrent channel (Ito). According to the random number table, the mice were dividedinto six groups of six mice each: control group, MI group, PC6, LU7 (Lieque-point), ST36(Zusanli-point), and nonacupoint group. Mice in the control group were injected with saline(20 mg/kg, 24 hours interval), and the other ASIC3 / mice were injected subcutaneouslytwice with isoproterenol (ISO) (20 mg/kg, 24 hours interval). In thepreexperiment, 5 mg/kg, 10 mg/kg, 20 mg/kg, and 30 mg/kg of ISO were used, andthe results showed that 5 mg/kg and 10 mg/kg of ISO both could induce acute MI, butshorter duration of sustained MI. On the other hand, an injection of 30 mg/kg can makethe mice experience arrhythmia or die immediately, and EA was operated at PC6, LU7,ST36 acupoints, and nonacupoint in the mice of PC6, LU7, ST36, and nonacupoint groups,respectively, after injecting twice. Then Western blotting techniques (Western Blot) wereused to analyze the protein expressions of Kv1.4, Kv4.2, Kv4.3, and KchIP2. The results ofthis experiment showed that the protein expressions of Kv1.4, Kv4.2, Kv4.3, and KChIP2 inMI group were significantly lower than those in the control group (p < 0.01). Comparedwith MI group, the results of PC6, LU7, and ST36 groups obviously increased (p < 0.05). Furthermore, the expressions of PC6 group were higher than LU7 group and ST36 group(p < 0.05). And electrocardiogram’s T-waves showed obvious pathological changes inthe MI group compared to the control group (p < 0.01). After EA, the abnormal T-waves voltage of ECG in PC6, LU7, and ST36 groups was improved (p < 0.05). In addition, therate change of PC6 group was larger than that of both LU7 and ST36 groups (p < 0.05). But the T-waves voltage of the nonacupoint group was not significantly different than thatof the MI group (p > 0.05).
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Effects of Ohmic Area Etching on Buffer Breakdown Voltage of AlGaN/GaN HEMT
Chong Wang,Xiao-Xiao Wel,Meng-Di Zhao,Yun-Long He,Xue-Feng Zheng,Wei Mao,Xiao-Hua Ma,Jin-Cheng Zhang,Yue Hao 한국전기전자재료학회 2017 Transactions on Electrical and Electronic Material Vol.18 No.3
This study is on how ohmic area etching affects the buffer breakdown voltage of AlGaN/GaN HEMT. The surfacemorphology of the ohmic metal can be improved by whole etching on the ohmic area. The buffer breakdown voltagesof the samples with whole etching on the ohmic area were improved by the suppression of the metal spikes formedunder the ohmic contact regions during high-temperature annealing. The samples with selective etching on theohmic area were investigated for comparison. In addition, the buffer leakage currents were measured on the differentradii of the wafer, and the uniformity of the buffer leakage currents on the wafer were investigated by PL mappingmeasurement.
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Effects of Ohmic Area Etching on Buffer Breakdown Voltage of AlGaN/GaN HEMT
Wang, Chong,Wel, Xiao-Xiao,Zhao, Meng-Di,He, Yun-Long,Zheng, Xue-Feng,Mao, Wei,Ma, Xiao-Hua,Zhang, Jin-Cheng,Hao, Yue The Korean Institute of Electrical and Electronic 2017 Transactions on Electrical and Electronic Material Vol.18 No.3
This study is on how ohmic area etching affects the buffer breakdown voltage of AlGaN/GaN HEMT. The surface morphology of the ohmic metal can be improved by whole etching on the ohmic area. The buffer breakdown voltages of the samples with whole etching on the ohmic area were improved by the suppression of the metal spikes formed under the ohmic contact regions during high-temperature annealing. The samples with selective etching on the ohmic area were investigated for comparison. In addition, the buffer leakage currents were measured on the different radii of the wafer, and the uniformity of the buffer leakage currents on the wafer were investigated by PL mapping measurement.
KCI
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